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  • 1
    Electronic Resource
    Electronic Resource
    Surface modification of plasma-pretreated poly(tetrafluoroethylene) films by graft copolymerization (1993)
    s.l. : American Chemical Society
    Macromolecules 26 (1993), S. 2832-2836 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00063a030
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  • 2
    Electronic Resource
    Electronic Resource
    A novel induction heater for chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1174-1176 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140281
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  • 3
    Electronic Resource
    Electronic Resource
    Composition dependence of giant magnetoresistance in (La1−xYx)2/3Ca1/3MnOδ (0≤x≤1) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5188-5190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared a series of polycrystalline bulk samples of (La1−xYx)2/3Ca1/3MnOδ (0≤x≤1), and studied their magnetization M, resistivity ρ, and low-field magnetoresistance (MR) in the temperature range 10 ≤T≤300 K. The ferromagnetic transition temperature of the samples Tc decreases with increasing x. For each sample, both ρ and MR have peak values at a temperature close to Tc. The peak value of ρ increases rapidly with increasing x while the peak value of MR has a maximum at x∼0.4. We observed MR value [defined as [ρ(0)−ρ(B)]/ρ(0)] as high as 91% at B=0.85 T. Some of the results could be explained by the semicovalent exchange theory of Goodenough [Prog. Solid State Chem. 5, 145, (1971)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361334
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  • 4
    Electronic Resource
    Electronic Resource
    Optical response of single-crystal (La,Ca)MnOδ thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1810-1812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (La,Ca)MnOδ thin film can be used as a bolometer operated over a wide temperature range around its metal–semiconductor transition where its resistance (R) changes rapidly. This material has a high optical absorption coefficient over a broad wavelength range and is chemically stable in air. We measured the optical response of single-crystal (La,Ca)MnOδ thin films to a He–Ne laser (632.8 nm) as a function of temperature (T), light modulation frequency (f), bias current (I), and laser power (P). The temperature dependence of the measured signal follows the dR/dT curve and the signal depends linearly on I and P. These results indicate that the response is mainly bolometric. Room temperature operation is possible if the sample composition and oxygen stoichiometry are adjusted appropriately. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360974
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of Si incorporation on the structural change of a-BxSi1−x alloy films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6094-6099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous BxSi1−x films can be easily prepared by low-pressure chemical vapor deposition over the whole range of x from 0 to 1. In this article, the structural change of BxSi1−x films (0≤x≤1) was studied by x-ray diffraction and infrared (IR) absorption experiments. It was found that these two methods are complementary to each other. X-ray results showed that when x is decreased, there is a gradual transition from the a-B structure, through the SiB4 structure, to the amorphous silicon structure. The transition to a-Si structure is complete at a surprisingly high boron concentration of around 40 at. %. Infrared data also revealed an unexpected result—that the presence of boron suppresses the formation of Si—H types of bonds in high silicon content films, in strong contrast to films prepared by the glow discharge method. Another interesting feature of the IR absorption spectra is the predominance of an absorption band, related to the presence of boronlike icosahedral clusters, in all films with boron concentration to as low as 17.6 at. %. Such clusters may be responsible for the easy formation of an impurity band lying about 0.2 eV above the valence mobility edge, as observed by transport measurements of boron-doped a-Si films prepared by low-pressure chemical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355171
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of discharge pressure on the properties of Ag/Ni superlattices prepared by facing-target sputtering : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6279-6281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance (GMR) effect in magnetic multilayered thin films is strongly affected by interface roughness. We prepared [Ag/Ni]60 superlattices on Corning's 7059 glass substrates using a novel facing-target sputtering method and observed that the interface roughness can be controlled by varying the discharge pressure (PAr). The samples prepared at PAr≈10 mTorr exhibit sharpest interfaces, good (111) texture, and largest GMR effects (Δρ/ρs=9% at room temperature). Lower PAr promotes interface mixing while higher PAr results in much rougher interfaces and emergence of structural defects. Both cases weaken the antiferromagnetic coupling strength and thus reduce the MR effect. When PAr≥30 mTorr, we observed a further degradation of the multilayered structure. The GMR effects in these samples disappeared. Low-temperature annealing can improve the flatness of the interfaces and film structure, while higher-temperature annealing ((approximately-greater-than)300 °C) decomposes the multilayer structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362036
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  • 7
    Electronic Resource
    Electronic Resource
    Crystal structure of proton-exchanged LiNbO3 waveguides (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 871-873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is generally agreed that the crystal structure of proton-exchanged LiNbO3 waveguides is not consistent with the Li1−xHxNbO3 phase diagram established using powder samples. We propose a simple strain model to remove such anomaly and show that the proton-exchanged layer on a LiNbO3 substrate is in a strained β (triple-prime) phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357762
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal conductivity of amorphous alloys above room temperature (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4919-4925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal conductivity of ten amorphous alloys has been measured between 280 and 500 K. The thermal conductivity, K, can be separated into the electronic (Ke) and phonon (Kph) contributions. The electronic thermal conductivity, deduced from the Wiedemann–Franz law, varies almost linearly with temperature, whereas the phonon thermal conductivity shows a slower increase. At 300 K, Kph accounts for 34–49% of K. The phonon mean free path l is 12.5 A(ring) for the binary alloy Fe80B20, but l decreases as the number of chemical components increases, reaching 7 A(ring) for the five-component alloys Fe32Ni36Cr14P12B6 and Co66Fe4Mo2B12Si16. The metal-metal glasses, Cu70Zr30 and Cu45Zr55, have l values slightly larger than 11 A(ring), indicating that they have short-range order similar to that of Fe80B20.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349037
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  • 9
    Electronic Resource
    Electronic Resource
    Electron-cyclotron maser instability caused by hot electrons (1985)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 28 (1985), S. 2751-2754 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-cyclotron maser instability is studied for energetic electrons with a loss-cone distribution. The instability can occur at all angles of propagation for a wide range of parameters. The growth rate is significantly reduced by the presence of a population of cold electrons, and the instability can be supressed if the density of the cold electrons is sufficiently large and the temperature of the energetic electrons is not too high.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.865234
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  • 10
    Electronic Resource
    Electronic Resource
    Computer-controlled four-gun multisubstrate sputtering system for the preparation of composition-modulated structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 607-612 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a four-gun sputtering system which has been used successfully to prepare composition-modulated structures consisting of amorphous semiconductors and superconducting alloys or binary compounds. The substrates are mounted in ovens which can be individually heated to over 1000 °C. The ovens are mounted on a wheel which is driven by a computer-controlled stepping motor. With appropriate programming of the movement of the stepping motor, the deposition sequence is determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138297
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