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Epitaxial (100) silicon films grown at low temperatures in an electron-beam evaporator (1985)

Milosavljevic, M. ; Jeynes, C. ; Wilson, I. H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 1252-1255

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Epitaxial silicon films were grown on (100) silicon wafers at temperatures between 650 and 700 °C without the need of special cleaning procedures. Deposition rates were from 30 to 80 nm/min. The structure of films was analyzed by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectroscopy. The films were doped by ion implantation. Electrical activity, Hall mobility, and sheet resistivity of the doped layers were measured. Both structural and electrical characterization yielded results indistinguishable from good-quality bulk wafers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.334522

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