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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 864-869 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report molecular dynamics simulations of LiCl, NaBr, and CsBr in supercritical water in order to explain the experimental observations of the limiting conductances as a function of the density of water at supercritical state points. As was the case in our previous work on NaCl in supercritical water [Lee et al., Chem. Phys. Lett. 293, 289 (1998)], we find that the experimental trends in the limiting conductances as a function of water density are reproduced in our simulations—a clear change of slope from the assumed linear dependence of limiting conductances of LiCl, NaBr, and CsCl on the water density. We also found that the effect of the number of hydration water molecules around ions dominates in the higher-density region while the interaction strength between the ions and the hydration water molecules (as measured by the potential energy per hydration water molecule) dominates in the lower-density region. In the case of Cs+ and Br−, however, the latter factor in the lower-density region is not as dominant as in the cases of Na+ and Cl− since a clear difference between the potential energy per hydration water molecule at densities above and below 0.45 g/cm3 was not clearly observed in the cases. In the case of Li+, the interaction between the ions and the hydration water in the lower-density region is almost a nonfactor since the potential energy per hydration water molecule is monotonically decreased with decreasing water density, which is consistent with the linear increase of the limiting conductance for the Li+ ion with decreasing water density. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8259-8263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a vertically aligned 4-domain nematic liquid crystal display cell with thin film transistor. Unlike the conventional method constructing 4-domain, i.e., protrusion and surrounding electrode which needs additional processes, in this study the pixel design forming 4-domain with interdigital electrodes is suggested. In the device, one pixel is divided into two parts. One part has a horizontal electric field in the vertical direction and the other part has a horizontal one in the horizontal direction. Such fields in the horizontal and vertical direction drive the liquid crystal director to tilt down in four directions. In this article, the electro-optic characteristics of cells with 2 and 4 domain have been studied. The device with 4 domain shows faster response time than normal twisted-nematic and in-plane switching cells, wide viewing angle with optical compensation film, and more stable color characteristics than 2-domain vertical alignment cell with similar structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2848-2854 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus has been constructed to conduct electromigration tests on realistic specimens while simultaneously observing them at relatively high magnification. A scanning transmission electron microscope has been converted into a high-voltage scanning electron microscope (HVSEM) with a large specimen chamber. By imaging with high-energy electrons (120 keV) and detecting backscattered electrons, voids in metal lines can be viewed through passivation layers. The HVSEM has a resolution of 50 nm through 1 μm of passivation. We have constructed instrumentation to heat and pass current through interconnect structures, while they are inside the electron microscope. Presently, the specimen temperature can be as high as 350 °C and is maintained constant to within 0.1 °C. The resistances of interconnects are measured with a precision of 0.05% during an experiment. Testing the lines at moderately accelerated conditions requires great stability of the microscope and instrumentation as well as full automation of the data collection. These requirements have been met, and metallization lines can be tested for several weeks with minimal operator intervention. Digital images of an entire 300-μm-long test structure as well as electrical data are stored automatically every few minutes during a test. The hundreds to thousands of pictures are analyzed using digital image processing techniques to extract void positions and sizes as a function of time. We use this system to characterize electromigration failure in advanced interconnect structures and to test existing theories on electromigration phenomenon. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4470-4475 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Mn2+ ion-doped β-Ga2O3 single crystal was grown by using a floating zone method. By employing an X-band electron paramagnetic resonance (EPR) spectrometer, Mn2+ EPR spectra were recorded at room temperature. The rotation patterns in the crystallographic planes together with spin-Hamiltonian parameters of Mn2+ show unequivocally that the actual local site symmetry of the Mn2+ ion is monoclinic. A Mn2+ ion lies on a site with a two-fold rotation symmetry, parallel to the monoclinic axis of the crystal. The spectroscopic splitting tensor g, zero-field splitting parameters Bkqs, and the hyperfine tensor A are determined with the effective spin Hamiltonian. It turns out that the Mn2+ ion lies at only one site, the substitutional site for the Ga3+ ion in the oxygen octahedron rather than in tetrahedron. Energy levels of the ground state for a Mn2+ ion embedded in the β-Ga2O3 crystal are calculated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7797-7808 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of dielectric layers on electromigration failure were studied in situ using a high-voltage scanning electron microscope and at the wafer level using conventional accelerated testing. Several different passivation layers were deposited on wafers with A1 interconnect test structures. Prior to the deposition of the final dielectric, the wafers were processed identically and, whenever possible, simultaneously. Interconnects encapsulated with compliant polymer and very thin (0.1 μm) SiO2 layers demonstrated substantial lifetime extensions over those with more rigid (1 μm thick) SiO2 layers. Unpassivated lines behaved dramatically differently and failed much sooner than those covered with only 0.1 μm of SiO2. As expected, increasing the passivation thickness from 0.5 to 4 μm increased the electromigration lifetime for SiO2 covered specimens. The fabrication of silicon dioxide dielectrics using electron-cyclotron-resonance chemical-vapor deposition (CVD) and silicon nitride dielectrics via plasma-enhanced CVD damaged the interconnects. This damage nearly completely removed the barrier to void nucleation during electromigration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1424-1428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron paramagnetic resonance of the Eu2+ ion in a PbWO4 single crystal, grown by the Czochralski method, has been investigated using an X-band spectrometer. The rotation patterns in the crystallographic planes together with spin-Hamiltonian parameters of Eu2+ show that the local site symmetry of the Eu2+ ion is tetragonal. The spectroscopic splitting tensor g, zero-field splitting parameters Bkq, and hyperfine tensor A are determined with the effective spin Hamiltonian. Energy levels of the ground state for Eu2+ embedded in the PbWO4 crystal are calculated. It turns out that the Eu2+ ion substitutes for the Pb2+ ion without any charge compensation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 315-321 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extra-low-frequency (ELF) wave generation by modulated polar electrojet currents is studied. The amplitude-modulated high-frequency (HF) heating wave excites a stimulated thermal instability to enhance the electrojet current modulation by the passive Ohmic heating process. Inelastic collisions of electrons with neutral particles (mainly due to vibrational excitation of N2) damp nonlinearly this instability, which is normally saturated at low levels. However, the electron's inelastic collision loss rate drops rapidly to a low value in the energy regime from 3.5 to 6 eV. As the power of the modulated HF heating wave exceeds a threshold level, it is shown that significant electron heating enhanced by the stimulated thermal instability can indeed cause a steep drop in the electron inelastic collision loss rate. Consequently, this instability saturates at a much higher level, resulting to a near step increase (of about 10–13 dB, depending on the modulation wave form) in the spectral intensity of ELF radiation. The dependence of the threshold power of the HF heating wave on the modulation frequency is determined. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3472-3474 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sr0.25Ba0.75Nb2O6 (SBN) thin films postannealed at 750 °C for 30 min were epitaxially grown in the [00l] direction on p-type (100) Si substrates by the rf magnetron sputtering method. The capacitance–voltage (C–V) characteristics of Au/SBN/Si capacitors, which depend on postannealing conditions, were measured. The C–V curve of the crystalline SBN film had a hysteresis curve with a clockwise rotation. The memory window and surface charge density calculated from the hysteresis loop are 2.1 V and 85 nC/cm2, respectively. From the data of a deep level transient spectroscopy, the activation energies of major traps in the crystalline SBN film obtained were about Ev+0.26 eV and Ev+0.28 eV, by using the Arrhenius plot. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 888-890 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the turn-off transient behavior of electron- and proton-irradiated silicon p–n junction diodes. Electron-irradiated n+–p diodes showed transient current peaks at lower reverse voltages. When the forward current was increased, the height and the number of the peaks increased, and at each peak the diode voltage showed a sharp decrease. We explain that the increased ionization coefficients by the electron irradiation caused the current peak to appear during the turn-off transients. p+–n diodes irradiated under the same condition did not show the large peak. This suggests that only the defects in the p-type silicon are responsible for the current peaks. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 774-776 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the photoresponse of Pb(Zr0.53Ti0.47)O3 (PZT) thin films by measuring the current–voltage (I–V) curve at several ferroelectric polarization states illuminated by a monochromatic 3.5 eV UV light. The photocurrent in Pt/PZT/Pt capacitors was sensitive to the polarization state, and the poling voltage-dependent photocurrent showed very asymmetric hysteresis behavior. The capacitance that is dependent upon the thickness of the samples was first measured. Then, the capacitance of the interfacial layer at a state with no interdiffusion between Pt and PZT film was extrapolated by using an equivalent circuit model. The result of the extrapolation was 28.1 μF/cm2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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