Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4502-4508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration damage in flip chip solder bumps of eutectic SnPb and SnAg3.8Cu0.7 was studied after current stressing at 120 °C with 1.5 A. The diameter of the bumps was about 200 μm. The under-bump metallization (UBM) on the chip side was electroless Ni and on the board side was electroplated Cu. Surface marker motion was used to measure the atomic flux driven by electromigration and to calculate the effective charge number, Z*, of the solder. For eutectic SnPb, Z* is about 36–100 after 39.5 h of electromigration, but for SnAg3.8Cu0.7 the marker movement was too small to measure Z* even after 200 h of current stressing. While the effect of electromigration in SnAg3.8Cu0.7 is much smaller than that in eutectic SnPb, hillocks of intermetallic compounds at the anode have been observed in the former. An extensive growth of Ni–Cu–Sn intermetallic compounds in the matrix of both solder bumps was found. A localized dissolution of electroless Ni UBM was observed under current stressing, yet no dissolution of the Cu UBM by electromigration was found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400096
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electromigration of eutectic SnPb solder interconnects for flip chip technology (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3189-3194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration of eutectic SnPb solder interconnects between a Si chip and a FR4 substrate was studied at 120 °C for up to 324 h with current stressing of 104 amp/cm2. Hillocks were observed at the anode and voids at the cathode. The dominant diffusing species was found to be Pb, confirmed by its accumulation at the anode. Diffusion markers were used to measure the electromigration flux and calculate the effective charge of atomic diffusion in the solder. Extensive microstructural evolution was also observed in the two-phase solder alloy that occurred by a ripening process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342023
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Wetting reaction versus solid state aging of eutectic SnPb on Cu (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4843-4849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of eutectic SnPb solder on Cu were studied and compared in the liquid state at 200 to 240 °C and in the solid state aged at 125–170 °C. The ternary phase diagrams of SnPbCu, the morphology of intermetallic compound (IMC), and the kinetics of growth of the intermetallics were used in the comparison. The temperature difference between these two reactions is only 30 °C, but the kinetics of reaction, as well as the morphology of IMC formation, are very different. The kinetics in the wetting reaction is four orders of magnitude faster than that in solid state aging. The Cu6Sn5 intermetallic morphology in solid state aging is a layer type, but it has a scallop-type morphology in the wetting reaction. The morphology strongly affects the kinetics. While the kinetic difference can be attributed to the difference in atomic diffusivity between the liquid state and the solid state, it is the morphology that determines the kinetic path in these reactions. We conclude that a fast rate of reaction, which leads to a high rate of Gibbs free energy change, controls the reaction, not the Gibbs free energy change itself. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357469
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Resonant ultrasound spectroscopy for measurement of mechanical damping: Comparison with broadband viscoelastic spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2855-2861 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article compares resonant ultrasound spectroscopy (RUS) and other resonant methods for the determination of viscoelastic properties such as damping. RUS scans from 50 to 500 kHz were conducted on cubical specimens of several materials including brass, aluminum alloys, and polymethyl (methacrylate) (PMMA), a glassy polymer. Comparison of damping over the frequency ranges for broadband viscoelastic spectroscopy (BVS) and RUS for indium tin alloy in shear modes of deformation discloses a continuation of the tan δ power-law trend for ultrasonic frequencies up to 300 kHz. For PMMA, resonant peaks were sufficiently broad that higher modes in RUS began to overlap. Tan δ via RUS and BVS for PMMA agreed well in the frequency range where the methods overlap. RUS is capable of measuring tan δ as high as several percent at the fundamental frequency. Since higher modes are closely spaced, it is impractical to determine tan δ above 0.01–0.02 at frequencies other than the fundamental. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150703
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    NO/cyclic GMP pathway mediates the relaxation of feline lower oesophageal sphincter (2003)
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 23 (2003), S. 0 
    Details
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 We examined the role of the NO/cyclic GMP (cyclic GMP) pathway in nitric oxide (NO)- and vasoactive intestinal peptide (VIP)-induced relaxation of feline lower oesophageal sphincter (LES). Furthermore, it was studied whether methylene blue, LY83583 and ODQ, which are soluble guanylate cyclase (sGC) inhibitors, could inhibit NO-induced relaxation.2 The nitric oxide synthase (NOS) inhibitor, N-nitro-l-arginine (l-NNA) had no effect in sodium nitropruside (SNP)-induced relaxation, but 3-morpholinosydnonimine-N-ethylcarbamide (SIN-1)-induced relaxation was decreased by the pretreatment of l-NNA, which showed that SIN-1, not SNP, could activate NOS to cause relaxation. Methylene blue and LY83583 did not inhibit the relaxation by SNP and SIN-1. However, the more specific sGC inhibitor ODQ blocked the relaxation induced by NO donors.3 To identify the relationship of NOS, sGC and adenylate cyclase in VIP-induced relaxation, tissue were pretreated with l-NNA and ODQ and SQ22536. These inhibitors produced significant inhibition of this response to VIP. The adenylyl cyclase inhibitor SQ 22536 also inhibited relaxation by VIP.4 In conclusion, our data showed that SNP- and SIN-1-induced relaxation was mediated by sGC. Of sGC inhibitors, methylene blue and LY83583 were not adequate for the examination of NO donor-induced feline LES smooth muscle relaxation. VIP also caused relaxation by the pathway involving NO and cGMP and cAMP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1474-8673.2003.00291.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Differential regulation by Ca2+ of calmodulin- and PKC-dependent contractile pathways in cat lower oesophageal sphincter (2003)
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 23 (2003), S. 0 
    Details
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 In the present investigation we examined the regulation of calmodulin (CaM)- and protein kinase C (PKC)-dependent pathways by cytosolic Ca2+ in the contraction of cat lower oesophageal sphincter (LES). 2 Force developed in response to increasing doses of acetylcholine (ACh) was directly related to the increase of the [Ca2+]i measured by fura-2. Thapsigargin, which depletes Ca2+ stores, reduced the contraction and the [Ca2+]i. In addition, contraction in response to maximal ACh was reduced by the CaM inhibitor CGS9343B but not by the PKC inhibitor chelerythrine. The contraction in response to submaximal ACh was reduced by chelerythrine but not by CGS9343B. 3 In permeabilized cells, the contraction in response to low Ca2+ (0.54 μm) was also reduced by CGS9343B. 4 The response to high Ca2+ (1.0 μm) was reduced by CGS9343B. ACh also inhibited PKC activation induced by diacylglycerol, which activation is inhibited by the N-myristoylated peptide inhibitor derived from pseudosubstrate sequences of PKCαβγ (myr-PKC-αβγ), but not of myr-PKC-α. 5 These data are consistent with the view that activated CaM-dependent pathways inhibit PKC-dependent pathways, this switch mechanism might be regulated by Ca2+ in the LES.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1474-8673.2004.00302.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Effect of columnar defects in YBa2Cu3O7−x ramp-edge Josephson junctions (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3239-3241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the transport properties in YBa2Cu3O7−x (YBCO) ramp-edge Josephson junctions before and after 1.3 GeV Pb-ion irradiation. The barrier of the junctions was formed by structural modification of the ramp-edge surface of the YBCO base electrode. After a dose of ∼2×1010 Pb ions/cm2, both critical current and normal resistance of the junctions increased by ∼30% and 10%, respectively, except near the transition temperature. We interpret such an enhancement of the critical current as a result of impeding Josephson vortex motion by pinned magnetic flux in the electrodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325403
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Direct correlation between microstructure and mechanical tensile properties in Pb-free solders and eutectic SnPb solder for flip chip technology (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 482-484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between the microstructure and the mechanical tensile properties of lead-free solders and eutectic SnPb solders is presented for flip chip scale interconnects. Eutectic Sn–37Pb and Sn–0.7Cu solder (in wt %) exhibited a ductile fracture after tensile testing. Eutectic Sn–3.5Ag solder (in wt %) had greater strength and exhibited a brittle fracture at the interface. The different fracture behavior of the lead-free solders was attributed to the grain size and configuration of the intermetallics. Minor additions of alloying elements to the high Sn lead-free solder dramatically affected the microstructure and mechanical properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388160
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Atomic-scale observation of polarization switching in epitaxial ferroelectric thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 515-517 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin-film x-ray standing wave (XSW) technique is used for an atomic-scale study of polarization switching in ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT)/electrode heterostructures grown on SrTiO3(001). The XSW is selectively generated in the PZT by the interference between the incident x-ray wave and the weak (001) Bragg diffracted wave from the film. The XSW excites a fluorescence signal from the Pb ions in the PZT film, that is used to determine their subangström displacements after polarization switching has occurred. This experimental method yields unique information on the underlying atomic configurations for different polarization domain states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385349
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Thin-film metrology of silicon-on-insulator materials (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic rotating-analyzer ellipsometry employing a compensator was used to measure the ellipsometric angles and depolarization from 0.73 to 5.4 eV of commercial separation by implantation of oxygen wafers. The data were analyzed to find the thicknesses of the native oxide cap, the top Si layer, and the buried oxide (BOX). From the depolarization in the spectral region of interference fringes, we determine layer thickness nonuniformities. Although a reasonable agreement between the data can be found by describing the BOX with the optical constants of thermal oxide, it can be improved by modeling the BOX as an effective medium consisting of thermal oxide and amorphous Si. The physical justification for this model is the presence of Si islands near the BOX/substrate interface. We compare our ellipsometry results with a destructive analysis using electron microscopy and secondary ion mass spectrometry. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125651
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...