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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2886-2888 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bias dependence of interfacial barriers in Al2O3-based metal–oxide–semiconductor structures was studied by ballistic electron emission spectroscopy. Strong image force reductions of the barriers were observed. A conduction band offset between Al2O3 and Si of 2.78 eV was obtained. Electron trapping into levels that overlap the Si band gap and are located near the Si–Al2O3 interface led to charge densities of ∼2.5×1012 cm−2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3998-4000 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charged defects in SiO2 and at the SiO2–Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial Pb centers in n- and p-type samples were identified from simultaneously recorded Kelvin images. Limited trap occupancy, determined by the local, bias controlled Fermi level, and strong band bending lead to unusually sharp images of trapped charge. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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