Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3998-4000
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Charged defects in SiO2 and at the SiO2–Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial Pb centers in n- and p-type samples were identified from simultaneously recorded Kelvin images. Limited trap occupancy, determined by the local, bias controlled Fermi level, and strong band bending lead to unusually sharp images of trapped charge. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1380396
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