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  • 2000-2004  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 183-187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epilayers and GaN/AlGaN quantum wells (QWs) were grown by molecular beam epitaxy on GaN(0001) single crystal substrates. Transmission electron microscopy (TEM) was used to assess the crystal quality of the homoepitaxial layers. A dislocation density of less than 105 cm−2 is deduced from TEM imaging. Low temperature (1.8 K) photoluminescence (PL) of homoepitaxial GaN reveals PL linewidths as low as 0.3 meV for bound excitons. The PL integrated intensity variation between 10 and 300 K is compared to that observed on a typical heteroepitaxial GaN/Al2O3 layer. A 2 nm thick GaN/Al0.1Ga0.9N QW has been studied by time-resolved and continuous wave PL. The decay time is close to a purely radiative decay, as expected for a low defect density. Finally, the built-in polarization field measured in a homoepitaxial QW is shown to be comparable to that measured on heteroepitaxial QWs grown either on sapphire or silicon substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373640
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  • 2
    Electronic Resource
    Electronic Resource
    Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1348-1350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited photoluminescence (SPL) and by far-infrared (FIR) spectroscopy. A comparison of FIR and SPL results reveals a small splitting between the 2s and 2p donor states, interpreted as partly being due to the nonspherical crystal symmetry. The utilization of the selective excitation of neutral donor bound excitons I2 allows the identification of the I2 rotational excited states. An interpretation of two-electron spectra in GaN involving excited states of I2 is proposed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290386
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    Paper (German National Licenses)
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