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  • 1
    Electronic Resource
    Electronic Resource
    Chlorine-related neutral complex in screen-printed CdTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3386-3389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed low-temperature optical characterization of screen-printed CdTe is presented. Photoluminescence and excitation spectroscopy demonstrate the existence of a new defect center systematically found in all the deposited layers. A possible explanation is based on a local mode induced by the defect but the experimental data are also very similar to those presented by Monemar et al. [Phys. Rev. B 25, 7719 (1982)] for two complexes in GaP:Cu. including the characteristic orange luminescence (COL) center, and for an Ag-related complex in ZnTe:Ag. The growth process as well as the optical results lead to an identification of the defect with an isoelectronic complex involving Cl ([VCd 2ClTe]).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346342
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  • 2
    Electronic Resource
    Electronic Resource
    Strained GaAs layers grown on GaAs substrates with an intermediate GaAs1−xPx buffer layer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 198-203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of growing strained GaAs layers on GaAs (100) substrates using a nonpseudomorphic GaAs1−xPx buffer layers is examined. It is demonstrated that by varying the phosphorus content in a thick buffer (significantly thicker than the critical thickness for strain relaxation), uniform biaxial stress magnitude can be monitored in GaAs, e.g., 8 kbar biaxial compression can be achieved by a P composition of 0.16 in the alloy. After an x-ray diffraction study of strain relaxation in the buffers, low temperature photoluminescence measurements are used to evaluate the effect of such a stress upon monitoring the near band gap properties of GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350308
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 183-187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epilayers and GaN/AlGaN quantum wells (QWs) were grown by molecular beam epitaxy on GaN(0001) single crystal substrates. Transmission electron microscopy (TEM) was used to assess the crystal quality of the homoepitaxial layers. A dislocation density of less than 105 cm−2 is deduced from TEM imaging. Low temperature (1.8 K) photoluminescence (PL) of homoepitaxial GaN reveals PL linewidths as low as 0.3 meV for bound excitons. The PL integrated intensity variation between 10 and 300 K is compared to that observed on a typical heteroepitaxial GaN/Al2O3 layer. A 2 nm thick GaN/Al0.1Ga0.9N QW has been studied by time-resolved and continuous wave PL. The decay time is close to a purely radiative decay, as expected for a low defect density. Finally, the built-in polarization field measured in a homoepitaxial QW is shown to be comparable to that measured on heteroepitaxial QWs grown either on sapphire or silicon substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373640
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of ZnSe single crystals grown by solid-phase recrystallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2983-2989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate by high-resolution x-ray diffraction (HRXRD), temperature-dependent photoluminescence (PL) and reflectivity spectroscopies, and low-temperature selective-photoluminescence spectroscopy ZnSe single crystals grown by solid-phase recrystallization. HRXRD reveals the high structural perfection of the samples which exhibit rocking-curve linewidths in the 15–20 arcsec range. The low-temperature PL spectra are dominated by the so-called Ideep1 excitonic line, a neutral-acceptor bound-exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities to be Li acceptors. Donor–acceptor pair bands are very hardly detected at low temperature which indicates a low donor content. A major characteristics of these samples is the quasi-absence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, Ideep1 is ascribed to Zn-vacancy–donor complexes. Finally, from the temperature dependence of the PL emission and reflectivity, the band-gap energy of bulk ZnSe is found to linearly shrink with the temperature above 80 K at a rate of −4.3×10−4 eV K−1. The room-temperature gap is estimated to 2720±2 meV. Our results indicate that solid-phase recrystallization produces ZnSe samples with the highest structural quality and purity achievable at present time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363155
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  • 5
    Electronic Resource
    Electronic Resource
    Improvement of the carrier confinement by double-barrier GaAs/AlAs/(Al,Ga)As quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2111-2113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The insertion of few AlAs monolayers at the interfaces between a GaAs quantum well and (Al,Ga)As barriers gives rise to a new type of structure which is well described as a double-barrier quantum well. It is shown that only one or two AlAs monolayers are sufficient to significantly increase the confinement energies. Our results are discussed in the light of low-temperature photoluminescence experiments and are well described in the framework of numerical calculations based on the envelope function formalism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104976
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  • 6
    Electronic Resource
    Electronic Resource
    Time-resolved luminescence of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy on misoriented substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 783-785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of GaAs substrate misorientation from the (001) plane on the photoluminescence spectra of GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy have been investigated using time-resolved spectroscopy. It is shown, by comparison with a (001) heterostructure having a high impurity content, that the broadening of photoluminescence spectra, observed when the substrate misorientation is towards the (111)As plane, is very unlikely due to a preferential impurity incorporation but is rather originated from the growth mechanism on this type of surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103419
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence and Raman studies of residual stresses in GaAs directly grown on InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1558-1560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first-order Raman spectroscopy and low-temperature photoluminescence (PL) studies of GaAs layers grown by metalorganic vapor phase epitaxy (MOVPE) on InP (100) substrates. From both the shift of the longitudinal-optical phonons in the Raman spectra and the splitting and shift of band-edge exciton lines in PL, the epilayers are found to be under (100) coplanar tensile stress, which is consistent with the difference between the thermoelastic properties of the two materials. The PL analysis shows that carbon is the main residual acceptor impurity in MOVPE-grown GaAs/InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102243
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature effects on the photoluminescence of GaAs grown on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 45-47 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence properties of as-grown and post-growth annealed GaAs directly grown on Si substrates by metalorganic vapor phase epitaxy are studied at various temperatures. At low temperature, three extrinsic lines and an intrinsic exciton line split by residual biaxial tensile stress are observed. The extrinsic lines give evidence of growth-induced defects. One of these lines, involving the presence of Si acceptors, appears after post-growth annealing (10 min at 800 °C). The biaxial stress deduced from the intrinsic lines varies with temperature; extrapolation to zero stress results in a temperature slightly below the growth temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100829
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  • 9
    Electronic Resource
    Electronic Resource
    Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1596-1598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doubly doped (C,Be) GaAs layers grown by molecular beam epitaxy under dimer or tetramer arsenic flux are studied by selectively excited photoluminescence. Acceptor spectroscopy gives the first experimental evidence of the decrease of carbon shallow acceptor concentration when using dimer rather than tetramer arsenic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99092
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  • 10
    Electronic Resource
    Electronic Resource
    Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 233-235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reflection high-energy electron diffraction (RHEED) intensity level behavior during the growth of AlxGa1−xAs/GaAs quantum wells (QWs) is compared to the photoluminescence characteristics. The correlation between a decrease of the RHEED intensity level and the linewidth broadening of the excitonic QW transitions allows the unambiguous association of such a decrease with a roughening of the growth interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102840
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