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  • 1
    Electronic Resource
    Electronic Resource
    Electrical Transport in Polycrystalline Semiconductors (1994)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 37-38 (Mar. 1994), p. 201-212 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.37-38.201.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Si acceptor excited states in ion-implanted InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5171-5173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence has been used to investigate the behavior of Si-implanted InP, submitted to a postimplantation rapid thermal annealing. Compared with the non-implanted material, the implanted crystal displays a new broad band around 1.382 eV, in the low temperature (2 K) spectra. This band appears to be made of two unresolved recombination paths ascribed to the electron–acceptor (e,A°) and donor–acceptor pair recombinations of the silicon acceptor impurity substituted on phosphorus site. Besides the Zn-related transitions to s and p excited states, the selective excitation of the donor–acceptor pairs reveals additional recombination paths, ascribed to transitions to 2s3/2 and 2p5/2 (Γ7 and Γ8) excited states of silicon. The acceptor behavior of Si in InP is hence given a definite support by this work. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359751
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  • 3
    Electronic Resource
    Electronic Resource
    Chlorine-related neutral complex in screen-printed CdTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3386-3389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed low-temperature optical characterization of screen-printed CdTe is presented. Photoluminescence and excitation spectroscopy demonstrate the existence of a new defect center systematically found in all the deposited layers. A possible explanation is based on a local mode induced by the defect but the experimental data are also very similar to those presented by Monemar et al. [Phys. Rev. B 25, 7719 (1982)] for two complexes in GaP:Cu. including the characteristic orange luminescence (COL) center, and for an Ag-related complex in ZnTe:Ag. The growth process as well as the optical results lead to an identification of the defect with an isoelectronic complex involving Cl ([VCd 2ClTe]).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346342
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of Hg acceptor in GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1465-1467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectroscopy has been used to investigate the behavior of Hg, implanted into MBE-grown GaAs. A new recombination path in the near-band-edge region at 1.51291 eV is identified with the neutral Hg-bound exciton recombination (Hg°X), with a localization energy following an anti-Haynes' rule. The electron-acceptor and donor-acceptor transitions are displayed at 1.466 and 1.463 eV, respectively. From the temperature dependence of the photoluminescence, the value of 52.5 meV is extracted for the binding energy of the Hg acceptor in GaAs. With the resonant excitation of the Hg°X line, the electronic signature of the Hg acceptor in GaAs is further evidenced, with the observation of two-hole transitions. Transitions to 2s as well as 3s states are resolved, with Raman shifts of 37.2 and 44.8 meV, respectively. The corresponding binding energies are thus 15.3 and 7.7 meV, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114496
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  • 5
    Electronic Resource
    Electronic Resource
    Low residual impurities assessment by photoluminescence in multistep wafer-annealed semi-insulating Czochralski-grown GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multistep wafer-annealed semi-insulating GaAs wafers (MWA) are characterized using photoluminescence (PL). The PL spectra present well-resolved near-band-edge transitions, including the doublet of the neutral acceptor-bound exciton. A detailed investigation using selective pair luminescence of samples submitted to different annealings, i.e., wafer- or ingot-annealing, single or multistep, shows that carbon is the main shallow acceptor. However, for the wafer-annealed samples, two other residual impurities found in the as-grown or ingot-annealed crystals have their estimated concentrations noticeably reduced, for Zn (e.g., around 1013 cm−3 in MWA), or are unresolved for Si. This reduction of background impurities may have direct consequences for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107679
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