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  • 1
    ISSN: 1432-0428
    Keywords: Keywords Diabetic nephropathy ; PON1 ; polymorphism ; case-control study ; Type I diabetes.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Aims/hypothesis. Oxidative stress is a putative mechanism in the development of diabetic nephropathy. Paraoxonase gene 1 is an HDL-bound enzyme that protects tissues against oxidative damage. Three common polymorphisms of paraoxonase gene 1, T-107C in the promoter, Leu54Met and Gln192Arg, that modify paraoxonase activity have been associated with cardiovascular disease. This study aimed to find whether these polymorphisms also contribute to the development of diabetic nephropathy. Methods. The association between diabetic nephropathy and these three polymorphisms was examined in a case-control study. For this purpose, genomic DNA was collected from 188 patients with Type I (insulin-dependent) diabetes mellitus and diabetic nephropathy and from 179 unrelated patients with Type I diabetes but without diabetic nephropathy despite the duration of diabetes of 15 or more years. Results. The genotype and allele frequencies for each of the three polymorphisms (T-107C, Leu54Met and Gln192Arg) were similar in cases and control subjects. Conclusion/interpretation. The three polymorphisms in paraoxonase gene 1 that have been associated with serum levels of paraoxonase are not associated with diabetic nephropathy. We show that this genetically determined component of the antioxidant capacity of HDL does not play a critical part in the development of diabetic nephropathy. [Diabetologia (2000) 43: 1540–1543]
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-1076
    Keywords: Key words Hypoparathyroidism ; 22q11 deletion ; DiGeorge syndrome ; Graves disease ; Idiopathic thrombocytopenic purpura
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The phenotypes of chromosomal 22q11.2 microdeletion are quite variable among individuals and hypoparathyroidism (HP) constitutes a definite portion of the clinical spectrum. For the correct diagnosis and pertinent follow up of the HP children due to del22q11.2, we tried to delineate the clinical characteristics of such patients. By employing fluorescence in situ hybridization (FISH) to all the patients diagnosed as HP in our clinic, ten possessed the 22q11.2 microdeletion. Among them, the incidence of cardiac defect (5/10), recurrent infection (1/10) and cleft palate (1/10) was modest. Additionally, seven of them had been diagnosed as HP during the infantile period, when their facial abnormality and intellectual problem had not become evident. Notably, two patients were complicated by Graves disease, while the association of idiopathic thrombocytopenic purpura was also observed in two girls. Conclusion HP due to del22q11.2 may be misdiagnosed as idiopathic, especially in an infant who lacks apparent complications like cardiac anomaly. They should be closely followed up for auto-immune complications.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-1076
    Keywords: Chronic granulomatous disease ; Cytochrome b ; Cell surface expression ; 7D5 ; Monoclonal antibody
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The polymorphonuclear (PMN) cells from a patient with cytochrome b positive X-linked chronic granulomatous disease (Xb+CGD) were studied using flow cytometry. Both the cell surface expression of monoclonal antibody defined cytochrome b and the superoxide production (intracellular 2′, 7′-Dichlorofluorescin Diacetate oxidation) were investigated at a single cell level. Flow cytometry clearly demonstrated the complete absence of superoxide production in the patient's PMN cells, the mosaicism in his mother's PMN cells and also indicated the normal cell surface expression of cytochrome b. The results obtained by Western blot analysis and reduced-minus-oxidized spectra confirmed the presence of functional and normal amounts of cytochrome b. We concluded that this is a case of Xb+CGD with a normal cell surface expression of cytochrome b.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 55 (1975), S. 435-436 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 55 (1975), S. 437-438 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 91 (1979), S. 427-433 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 88 (1979), S. 642-648 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1080-1085 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence experiments were performed on high-purity InP substrates as a function of heat treatment, flat-profile ion implantation and subsequent annealing procedures. Whereas the well resolved near band edge luminescence proved the superior substrate quality, up to 6 sharp luminescence lines (some of them not reported so far) and one shallow broad-band emission were observed after Si3N4 deposition and various annealing procedures. From the temperature dependence of the luminescence peak intensities the activation energies of the novel lines were determined and discussed in terms of excitons bound to processing-induced complex defects. These assignments are supported by the observation of a strong enhancement of the luminescence after low dose Ar+ ion implantation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5171-5173 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence has been used to investigate the behavior of Si-implanted InP, submitted to a postimplantation rapid thermal annealing. Compared with the non-implanted material, the implanted crystal displays a new broad band around 1.382 eV, in the low temperature (2 K) spectra. This band appears to be made of two unresolved recombination paths ascribed to the electron–acceptor (e,A°) and donor–acceptor pair recombinations of the silicon acceptor impurity substituted on phosphorus site. Besides the Zn-related transitions to s and p excited states, the selective excitation of the donor–acceptor pairs reveals additional recombination paths, ascribed to transitions to 2s3/2 and 2p5/2 (Γ7 and Γ8) excited states of silicon. The acceptor behavior of Si in InP is hence given a definite support by this work. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2248-2253 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In neutron-transmutation-doped GaAs irradiated with various fast neutron fluences, the annealing behavior of band-germanium acceptor [Ge(B-A)] transitions has been evaluated using the photoluminescence technique. In the fast neutron irradiation of ≤7.0×1017 cm−2, a few percent of transmuted Ge atoms behave as acceptors in As sites and more than 98% of the transmuted Ge atoms activate as donors in Ga sites. In the fast neutron irradiation of 3.7×1018 cm−2, the shift of Ge(B-A) transitions towards lower energies originates from the band-edge distortion. Removing the band-edge distortion by annealing above 790 °C leads to the increase in the Ge acceptor, accompanied by an increase of the peak intensity of Ge(B-A) transitions. The lower electrical activation of transmuted impurities (∼75%) arises from the high-temperature annealing required to remove the radiation damage. On annealing out the radiation damage, the peak shift of Ge(B-A) transitions based on the increase in the free carrier is discussed using the Burstein–Moss model.
    Type of Medium: Electronic Resource
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