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  • 1
    Electronic Resource
    Electronic Resource
    Classification of current instabilities during low-temperature breakdown in germanium (1989)
    Springer
    Applied physics 48 (1989), S. 155-160 
    Details
    ISSN: 1432-0630
    Keywords: 05.45.+b ; 72.20.Ht ; 72.70.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present experimental investigations on the spatio-temporal nonlinear current flow in the post-breakdown regime of p-germanium at liquid-helium temperatures. The basic nonlinear effects are characterized in terms of the underlying semiconductor physics, taking into account the influence of different experimental parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141278
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of processing-induced defects in high-purity InP by photoluminescence (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1080-1085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence experiments were performed on high-purity InP substrates as a function of heat treatment, flat-profile ion implantation and subsequent annealing procedures. Whereas the well resolved near band edge luminescence proved the superior substrate quality, up to 6 sharp luminescence lines (some of them not reported so far) and one shallow broad-band emission were observed after Si3N4 deposition and various annealing procedures. From the temperature dependence of the luminescence peak intensities the activation energies of the novel lines were determined and discussed in terms of excitons bound to processing-induced complex defects. These assignments are supported by the observation of a strong enhancement of the luminescence after low dose Ar+ ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351783
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  • 3
    Electronic Resource
    Electronic Resource
    Nucleation and growth of current filaments in semiconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1412-1416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and disappearance of current filaments in homogeneously slightly doped semiconductors during avalanche breakdown at low temperatures is quantitatively evaluated in terms of a minimum and maximum value of the filament current. Both values arise from a model based on the power balance in the system. Experimental results obtained by the two-dimensional imaging of the filament configurations in n-GaAs and p-Ge agree quantitatively with the predictions of our power balance model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345698
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Excited-state spectroscopy of identified Mg acceptor in InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+-implanted bulk InP. The energy difference between the ground 1S3/2 and excited 2S3/2 states of the Mg acceptor is accurately measured by two-hole spectroscopy of Mg-acceptor bound exciton. Selective excitation of donor-acceptor pairs luminescence allows the identification of a set of 2P3/2 and 2P5/2 excited states. The measured values to be compared with similar published data obtained for Zn and C represent an additional step in the process of accurate identification of acceptors in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102781
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  • 5
    Electronic Resource
    Electronic Resource
    Imaging of self-generated multifilamentary current patterns in GaAs (1988)
    Springer
    The European physical journal 71 (1988), S. 171-178 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Two-dimensional imaging of current filament patterns generated in homogeneousn-type GaAs during avalanche breakdown at low temperatures is reported. The self-generated formation and subsequent growth behavior of distinct single- and multifilament configurations could globally be visualized by means of a scanning electron microscope equipped with a liquid-helium stage. From local conductivity measurements in the smallest possible filaments (typical diameter of about 10 μm) carrier mobilities as high as about 4·106 cm2/Vs at 4.2 K were estimated. Such high-mobility filament channels may become interesting for applications in ultrafast electronic circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01312786
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of electric transport properties in the pre- and post-breakdown regime ofp-germanium (1988)
    Springer
    The European physical journal 72 (1988), S. 225-233 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Conductivity and Hall-effect measurements were performed on single-crystallinep-doped germanium, electrically driven into low-temperature avalanche breakdown via impurity impact ionization. The electric transport properties were determined as a function of the applied electric field in the pre- and post-breakdown regime. The characteristic field dependence of the carrier density, mobility, and drift velocity was found to be reflected in smooth variations of the integral current flow. The breakdown mechanism was demonstrated to involve a mobility which sensitively depends upon the density of the mobile charge carriers. Our experimental findings are qualitatively explained by simple model approaches developed from established breakdown theories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01312139
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    Paper (German National Licenses)
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