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  • 2000-2004  (5)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Strain effects on As and Sb segregates immersed in annealed GaAs and GaSb by Raman spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3631-3633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering was used to obtain information about residual strains on As and Sb segregates immersed in GaAs and GaSb annealed at high temperatures. Eg and A1g modes of As and Sb in annealed GaAs and GaSb Raman spectra showed that the segregates are in the crystalline phase. Tensile stresses on As segregates were evident, while the Sb segregates were found to be practically relaxed. The temperature dependence of the stresses on segregates were determined. The different annealing temperatures used in this work were found to not cause substantial changes in stresses on segregates. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355697
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Raman characterization of structural disorder and residual strains in micromachined GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1280-1283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural disorder and strain effects in ductile-regime single-point-diamond-turned gallium arsenide monocrystalline samples were probed by Raman scattering. The positive frequency shift of the longitudinal and transverse optical phonons observed in the machined samples indicate a residual compressive stress of about 1.5 GPa. This residual strain was attributed to the hysteresis of phase transformation generated by the high pressure imposed by the cutting tool tip during the machining process. The broadening of the Raman peaks indicate a high degree of structural disorder in the GaAs lattice. Moreover, the Raman spectrum of annealed samples, after machining, shows a less disordered but still misoriented matrix. In addition, it was found that crystalline arsenic formed into the surface vicinity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372009
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Visible photoluminescence in amorphous ABO3 perovskites (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 253-255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence observed in ABO3 type perovskite in their highly structural disordered state can be explained by a model in which is assumed a distribution of electronic states localized within the energy band gap coupled to lattice local vibrational states. The model fits very well the experimental results and indicates that photoluminescence in the visible region can be considered as a general behavior of disordered solids. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494464
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  • 4
    Electronic Resource
    Electronic Resource
    Anharmonic frequency shift of long-wavelength phonons in As and Sb (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2924-2925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering was used to study the temperature dependence of the phonon frequencies of Eg and A1g modes of crystalline arsenic and antimony. The partial derivative of the frequency versus temperature for both materials was determined from a linear fitting approximation. The real anharmonic contribution to the shift was obtained after correction had been made for the contribution of thermal expansion. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320864
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of disordered ABO3 perovskites (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 824-826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense photoluminescence in highly disordered (amorphous) BaTiO3, PbTiO3, and SrTiO3 prepared by the polymeric precursor method was observed at room temperature. The emission band maxima from the three materials are in the visible region and depend on the exciting wavelength. The origin of the photoluminescence was not exactly identified. However, the line shape indicates that confinement effects are not probable. The experimental results indicate that it could be related to the disordered perovskite structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306663
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