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  • 2000-2004  (11)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Electrical isolation of n-type and p-type InP layers by proton bombardment (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5343-5347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of ≅Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365063
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5255-5261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have recently shown [P. N. K. Deenapanray et al., Appl. Phys. Lett. 77, 626 (2000)] that four electron traps S1(Ec−0.23 eV), S2(Ec−0.46 eV), S3(Ec−0.72 eV), and S4(Ec−0.74 eV) are introduced in rapid thermally-annealed (RTA) SiO2-capped n-type GaAs epitaxial layers. In the present study, we have used deep level transient spectroscopy to investigate the electronic and annealing properties of these deep levels. The electron emission kinetics of S1 is enhanced by an electric field, and the activation energy of S1 decreases linearly from ∼233 to ∼199 meV when the field is increased from 7.5×104 to 13.4×104 V cm−1. The intensities of S1, S2, and S4 show Arrhenius-like dependencies on the RTA temperature, which relate to the outdiffusion of Ga atoms into the SiO2 layer. The intensity of S2(VGa–SiGa) also increases exponentially with the square of the annealing time for RTA at 800 °C. Isochronal annealing experiments show that S1 and S2 are thermally stable below 500 and 400 °C, respectively. S4, which is a member of the EL2 family, is stable up to 600 °C. Secondary defects are introduced during isochronal annealing above 400 °C, and some of these defects are thermally stable at 600 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314907
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  • 3
    Electronic Resource
    Electronic Resource
    Doxycycline in the treatment of acne agminata (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 28 (2003), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2003.01398.x
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 696-698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects created in rapid thermally annealed (RTA) SiO2-capped epitaxial GaAs layers grown by metal-organic chemical vapor deposition have been investigated by deep level transient spectroscopy. RTA introduced four electron traps S1 (Ec−0.23 eV), S2 (Ec−0.46 eV), S3 (Ec−0.72 eV), and S4 (Ec−0.74 eV). S1 may be the so-called EL9 defect. We propose that S2 is a defect complex involving the Ga vacancy and Si dopant atoms, VGa–SiGa, and associate it with the EL5. S2 is introduced almost uniformly within the first 0.8 μm below the surface with an activation energy of 4.4 eV. S4 is most probably one of the EL2 family. The concentration of S4 decreased exponentially below the surface with a characteristic decay length ∼0.2 μm. The activation energy for the introduction of S4 is 2.5 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127089
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  • 5
    Electronic Resource
    Electronic Resource
    Quality of silica capping layer and its influence on quantum-well intermixing (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 837-839 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40%):HNO3(70%):H2O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on GaAs/AlGaAs quantum-well (QW) structures encapsulated by the same films. For all the prebaked films, not only the Si–O–Si peaks, but also OH-related peaks were detected in the IR spectra. After annealing at 950 °C for 60 s, almost all OH-related peaks disappeared. Spectroscopic ellipsometry modeling and P-etch measurements showed that the porosity of high-temperature (〉300 °C) baked samples was similar, and was significantly higher than the low-temperature (210 °C) baked sample. The same trend was observed in the PL energy shifts from the GaAs/AlGaAs QWs, indicating a direct correlation between the film quality and quantum-well intermixing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125601
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  • 6
    Electronic Resource
    Electronic Resource
    Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1171-1173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1449522
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  • 7
    Electronic Resource
    Electronic Resource
    Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 10-12 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs' response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332984
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  • 8
    Electronic Resource
    Electronic Resource
    Treatment of toxic epidermal necrolysis in AIDS with intravenous immunoglobulins (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 28 (2003), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Individuals with AIDS are at higher risk of developing severe cutaneous adverse drug reactions. We report two AIDS patients with drug-induced toxic epidermal necrolysis (TEN). The suspected drugs were discontinued. Both patients were treated with intravenous human immunoglobulins at a dose of 1 g/kg body weight per day for two consecutive days and both experienced a good outcome. Intravenous immunoglobulin potentially lowers the morbidity and mortality of TEN and shortens the duration of the patient's hospitalization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2003.01255.x
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  • 9
    Electronic Resource
    Electronic Resource
    Cutaneous melioidosis (2002)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 27 (2002), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Melioidosis is a rare tropical disease caused by infection with the bacterium Burkholderia pseudomallei. It occurs predominantly in south-east Asia, northern and central Australia and central and south America. Patients often present to the internal medicine physicians with a severe, potentially fatal sepsis. We report three patients who presented to our dermatology department with cutaneous melioidosis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2002.01021.x
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  • 10
    Electronic Resource
    Electronic Resource
    An unusual case of pemphigus vulgaris presenting as bilateral foot ulcers (2000)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 25 (2000), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We describe an unusual presentation of pemphigus vulgaris, an autoimmune intraepidermal blistering skin disease associated with autoantibodies to the desmosome glycoprotein, desmoglein 3. A 60-year-old man presented with bilateral ulceration on the dorsum of the feet. These clinical features persisted for 4 months before more characteristic signs of pemphigus vulgaris, including mouth ulceration and skin erosions, developed. The atypical presentation led to a delay in diagnosis and initiation of the appropriate treatment. Pemphigus vulgaris may have unusual manifestations, such as nail dystrophy, paronychia, or granulation tissue-like lesions, but this case of bilateral foot ulceration highlights a further, perhaps unique, clinical presentation of this autoimmune disease.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2000.00622.x
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