Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a pn structure (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1671-1673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the electronic states of self-organized InAs quantum dots embedded in a pn junction by means of capacitance–voltage (C–V) characteristics. A model based on the self-consistent solution of the Poisson equation and the drift-diffusion equations is proposed for calculating the capacitance. This model allows us to determine the energy levels of the quantum dot states and their inhomogeneous broadening from a comparison with experimental C–V data. Good quantitative agreement between predictions of the model and the low-frequency C–V characteristics is obtained. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290137
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristics (2000)
    Springer
    The European physical journal 13 (2000), S. 157-168 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 05.70.Ln Nonequilibrium and irreversible thermodynamics - 72.20.Ht High-field and nonlinear effects - 85.30.-z Semiconductor devices
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: We study the propagation of a lateral current density front in a bistable semiconductor system with S- or Z-shaped current-voltage characteristics. It is demonstrated that an external load circuit introduces a global coupling which leads to positive or negative feedback upon the front dynamics in S- or Z-type systems, respectively. This results in accelerated or decelerated front motion. The type of feedback can be reversed if the system is operated in an active external circuit with negative load resistance. Double barrier resonant tunneling diodes (DBRT) and heterostructure hot electron diodes (HHED) are used as examples of Z- and S-type systems, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050019
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...