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  • 1
    Electronic Resource
    Electronic Resource
    Gain-switched semiconductor laser amplifier as an ultrafast dynamical optical gate (1988)
    Springer
    Applied physics 46 (1988), S. 69-77 
    Details
    ISSN: 1432-0649
    Keywords: 42.55.Px ; 42.60.Da ; 85.60.Jb
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A gain-switched semiconductor laser is shown to act as an optical gate with picosecond resolution and amplification for light pulses from another laser source. The amplification mechanism and the gate width change qualitatively when the gate laser undergoes a transition from a pumping rate slightly below the dynamic laser threshold to slightly above the dynamic threshold. If the gate laser is pumped below but close to its dynamical threshold, unsaturated amplification of an external signal pulse occurs over a delay time range between the external optical pulse and the electrical driving pulse of about 100–200 ps which is equivalent to the optical gate width. The signal amplification is observed to increase by two orders of magnitude and the gate width decreases by one order of magnitude if the gate laser is pumped slightly above the dynamical threshold. Amplification then occurs for input signals injected much earlier. A detailed theory of coherent, time-dependent amplification including the nonlinear dynamics of the semiconductor laser is shown to account for the observations. Both amplification regimes, below and above threshold, are reproduced in the numerical simulations. The extremely short and highly sensitive gate range above threshold is identified as being due to the gain maximum related with the first relaxation oscillation of the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00698655
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  • 2
    Electronic Resource
    Electronic Resource
    Multistability of the current-voltage characteristics in doped GaAs-AlAs superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1808-1810 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric-field domain formation in doped semiconductor superlattices leads to sharp discontinuities in the current-voltage (I-V) characteristic. The successive expansion of the high-field region with increasing bias voltage through the periodic heterostructure manifests itself in a regular sequence of stable current branches. The current shows a complex hysteretic behavior. We observe two, three, and more stable current levels for fixed bias voltages. Calculations of the I-V characteristic based on a microscopic model support the experimentally observed multistability. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112850
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  • 3
    Electronic Resource
    Electronic Resource
    Criteria for stability in bistable electrical devices with S- or Z-shaped current voltage characteristic (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7352-7357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic devices exhibiting bistability in the current-voltage characteristics are considered from a unified viewpoint. We obtain simple relations for the stability of the different branches in the current-voltage characteristics. Criteria for oscillatory instabilities are discussed, and special conclusions for elements with S- or Z-shaped characteristics are drawn. The stabilization of the middle branch of the double-barrier resonant-tunneling diode in a circuit with effectively negative capacitance and negative resistance is derived in a simple way. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360384
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  • 4
    Electronic Resource
    Electronic Resource
    Real-space transfer oscillations in coupled quantum wires (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3602-3604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for nonlinear parallel transport in GaAs/n-AlxGa1−xAs quantum wires coupled via an external load circuit is developed. It takes into account the nonlinear dynamics of electric-field induced real-space electron transfer from GaAs to AlGaAs and delayed dielectric relaxation of the interface potential barrier. Quantum size effects are considered in the form of confining potentials. In the case of two symmetric quantum wires symmetric and asymmetric self-generated current oscillations of several hundred GHz are predicted. The coupling of two nonsymmetric wires yields quasi-periodic oscillations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354496
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  • 5
    Electronic Resource
    Electronic Resource
    Simulation of ZnSe-based self-electro-optic effect devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7051-7058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present computer simulations of self-electro-optic effect devices in different circuit environments, based on the quantum confined Stark effect in wide-gap materials with strong excitonic features. Our work is founded on a microscopic model of the electric field dependent absorption in ZnCdSe/ZnSSe quantum well structures, taking full account of Coulomb induced intersubband coupling and strong excitonic effects, which is essential for all wide-gap materials and distinguishes our theory from standard models of III–V compounds. Optical bistability and even multistability are predicted from the electro-optical and optical input–output characteristics for a wide range of operating conditions. The dependence upon the optical frequency, bias voltage, length of the waveguide and quantum well width, and possible optimization of the performance of the electro-optic modulator are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370511
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  • 6
    Electronic Resource
    Electronic Resource
    Lowering of grain-boundary barrier heights by grain curvature (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1434-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented for the potential barrier height at grain boundaries in polycrystalline semiconductors, which takes into account a curved grain boundary under equilibrium and nonequilibrium conditions, assuming flat quasi-Fermi levels. An analytical method to calculate the reduction of the potential barrier due to the grain curvature, without using the depletion approximation, is developed and applied to compute the barrier lowering as a function of the bulk doping concentration, interface state density, and the grain radius in silicon. The barrier height can vary along a grain boundary, due to different local curvatures, being lowest at corners of grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337322
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  • 7
    Electronic Resource
    Electronic Resource
    Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a pn structure (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1671-1673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the electronic states of self-organized InAs quantum dots embedded in a pn junction by means of capacitance–voltage (C–V) characteristics. A model based on the self-consistent solution of the Poisson equation and the drift-diffusion equations is proposed for calculating the capacitance. This model allows us to determine the energy levels of the quantum dot states and their inhomogeneous broadening from a comparison with experimental C–V data. Good quantitative agreement between predictions of the model and the low-frequency C–V characteristics is obtained. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290137
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3376-3380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bistable current–voltage characteristics caused by competition of tunneling through and field-enhanced thermionic emission across a single barrier are investigated in an n−-GaAs/Al0.34Ga0.66As/n+-GaAs structure. The S-shaped part of the characteristic persists in the whole temperature regime between 4.2 and 300 K in accordance with theoretical predictions. The delay and switching times of the transition from the low- to the high-conducting state are investigated as a function of the applied voltage and compared with simulations. The observed timescales are much longer than expected from theory, which indicates the presence of additional deep centers or interface states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363251
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  • 9
    Electronic Resource
    Electronic Resource
    Carrier transport and intersubband population inversion in coupled quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We theoretically study the possibility of achieving intersubband population inversion in coupled GaAs quantum wells, taking into account the relevant physical mechanisms of resonant tunneling and intersubband emission-absorption processes. Two coupled quantum well structures having intersubband resonant wavelengths of 10 and 60 μm are considered. We find that, in the case of an operating wavelength of 60 μm, intersubband population inversion is achievable at acceptable injection current densities even for room-temperature operation. However, achievement of intersubband population inversion is significantly more difficult at the shorter wavelength. The temperature and carrier transit time dependence of intersubband population inversion are also calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109815
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  • 10
    Electronic Resource
    Electronic Resource
    Electric field domains in intentionally perturbed semiconductor superlattices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 626-628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations based on a rate equation model for high-field transport through a doped semiconductor superlattice are presented for the case that one barrier is chosen significantly wider than the others. The distinct impact of that local perturbation on the overall shape of the current–voltage characteristic is discussed and related to the spatial field distribution. The measured current–voltage characteristic of a superlattice, which was intentionally grown with one thicker barrier, confirms the strong asymmetry predicted by the model calculations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117928
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