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  • 1
    Electronic Resource
    Electronic Resource
    Equilibrium density of defects in hydrogenated amorphous silicon carbon alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5969-5975 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we compare experimental measured density of defects in amorphous silicon-carbon alloys with a theoretical expression obtained by applying a thermodynamic equilibrium defects model to the intrinsic defect concentration in the semiconductor. The samples were deposited under different conditions of hydrogen dilutions and two substrate temperatures. The density of defects was determined by photothermal deflection and photoconductivity spectroscopy. The expression of the equilibrium density of defects is obtained starting from the canonical partition function assuming two independent systems of Si-Si and Si-C dangling bonds. A weak-bond defect formation reaction is assumed in the analysis. Linear approximations of the equilibrium temperature and the valence band exponential decay (Urbach's tail) are used for the numerical calculations. The trend of the experimental data are well represented by the theoretical expression. The model, however, overestimates the density of defects in samples deposited onto substrata maintained at the lower of two temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350448
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Infrared study of the Si—H stretching band in a-SiC:H'' [J. Appl. Phys. 69, 7805 (1991)] (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 545-545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351409
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  • 3
    Electronic Resource
    Electronic Resource
    Cathodoluminescence of diamondlike films deposited by glow discharge (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3786-3788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature cathodoluminescence of diamondlike films produced by glow discharge is reported. The material was deposited onto dc biased substrates maintained at relatively low temperature (〈100 °C). Two visible peaks around 2.3 eV (green) and 2.7 eV (blue-violet) were identified which are commonly found in natural and synthetic diamond, indicating the presence of crystalline particles in the films. Moreover, x-ray diffraction spectra of the samples before cathodoluminescence studies are identical to the ones reported for natural powder diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346306
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of hydrogen dilution on the optoelectronic properties of glow discharge amorphous silicon carbon alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 267-272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports the influence of diluting with hydrogen the gaseous mixture of methane and silane on the electrical and optical properties of silicon–carbon alloys deposited by glow discharge. Impressively high secondary photoconductivities, low density of gap defects states and Urbach energy parameter were found in materials prepared in suitable hydrogen dilution conditions. Experiments on temperature dependence of dark and under white light illumination conductivity are also reported and interpreted. Depending on the dilution and substrate temperature, the Fermi level shift toward the conduction band, suggesting a combined effect of low density of defects and sensitization as the causes of the high photoconductivities. IR studies show that appropriate hydrogen dilution and substrate temperature prevent the silicon atoms from forming high order hydrides. Consequently, a more compact structure with better electronic properties is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350698
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  • 5
    Electronic Resource
    Electronic Resource
    Reply to "Comment on ‘Infrared study of the Si-H stretching band in a-SiC:H' '' [J. Appl. Phys. 69, 7805 (1991)] (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4092-4093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the theoretical arguments used in the preceding comment do not apply to our experiments, and that our interpretation of the behavior of the Si-H stretching band in a-SiC:H in terms of structural influences is correct.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350838
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  • 6
    Electronic Resource
    Electronic Resource
    Infrared study of the Si-H stretching band in a-SiC:H (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7805-7811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon carbide (a-Si1−xCx:H) samples having x ≤ 0.4 were studied by infrared and visible spectroscopy. Treatment by factor analysis of the 2000–2100 cm−1 absorption band of the spectra allows us to interpret this particular vibrational mode in terms of only two independent contributions. The analysis shows that polarization inductive shifting is not significant. An IR study of the evolution of this band during oxidation of porous samples was also performed. All the experimental evidence indicates that the growth of free volumes induced by the presence of carbon plays the most important role in the behavior of the 2000–2100 cm−1 band upon stoichiometric variations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347509
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared analysis of deuterated carbon–nitrogen films obtained by dual-ion-beam-assisted-deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1065-1067 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotopic effect on the infrared spectra is used to determine the existence of nitrogen–hydrogen bonds in amorphous carbon–nitrogen alloys (a-CNx) prepared by dual-ion-beam-assisted deposition. The deuteration experiments and the evolution of the infrared spectra upon atmospheric exposure show that hydroxyls are incorporated from atmospheric moisture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122115
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  • 8
    Electronic Resource
    Electronic Resource
    The role of hydrogen in nitrogen-containing diamondlike films studied by photoelectron spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1539-1541 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of H on the local structure of N-containing amorphous diamondlike films (a-CNx:H) is reported. The samples were prepared by rf sputtering of graphite in a N2, Ar, and H2 atmosphere. The chemical bonding of C and N atoms was inferred by analyzing the C 1s and N 1s electronic core-level by x-ray photoelectron spectroscopy. Hydrogen free films present N 1s peaks with a "doublet", located at 398.2–400.5 eV. When H is introduced in the preparation chamber, the doublet evolves to a single wider band located at 399.1 eV. This new band becomes dominant when increasing H2 partial pressure, completely hiding the original structure. High H2 partial pressure interrupts the growing network formed by N and C due to the attachment of H to N and/or C. Furthermore, the experimental results suggest that the possibility of formation of the C3N4 phaselike is inhibited by the presence of hydrogen. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118611
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  • 9
    Electronic Resource
    Electronic Resource
    Time resolved photoluminescence of porous silicon: Evidence for tunneling limited recombination in a band of localized states (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2381-2383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time resolved photoluminescence of porous silicon at room temperature was measured for several emission energies under 2 ns nitrogen laser excitation. For each emission energy studied there is a broad distribution of lifetimes extending over a few decades. The mean value of the distribution varies with the emission energy, from 3 (2.77 eV) to 50 μs (1.96 eV). The results can be explained by assuming a tunneling limited recombination mechanism between bands of localized states. We associate this behavior with a superficial disordered Si:O:H compound rather than with quantum confinement effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109371
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  • 10
    Electronic Resource
    Electronic Resource
    Nanosize structures connectivity in porous silicon and its relation to photoluminescence efficiency (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1927-1929 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy is used to reveal the existence of an interconnected nanosize structure in porous silicon films. The interconnections of this nanostructure determine the photoexcited electron-hole pair separation and consequently the luminescence efficiency of the material. Efficient photoluminescence is obtained from structures which shows no connectivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110651
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