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  • 1995-1999  (70)
  • 1990-1994  (70)
  • 1910-1914  (1)
  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 313-314 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design and performance of a compact ultrahigh vacuum sample holder, which allows (1) sample transfer, (2) liquid-nitrogen cooling, (3) heating by electron bombardment, and (4) temperature measurement in direct proximity to the sample. The device operates from close to liquid-nitrogen temperatures up to temperatures of 800–900 K in the steady-state regime with peak temperatures in excess of 1700 K and allows easy and reliable sample transfer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5959-5964 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed isothermal annealing on a hydrogenated amorphous silicon (a-Si:H) sample deposited at low temperature in a glow discharge reactor. In order to change the hydrogen bonding configuration without affecting the silicon structure we choose a relatively low annealing temperature. We studied the dependence on the annealing time of the dark conductivity, photoconductivity, light-induced degradation of the photoconductivity, optical gap, vibrational spectra, and subgap defect density. As the annealing time increased we found an increase in the dark conductivity activation energy. This shift of the dark Fermi level toward the valence band was correlated with the growth of a peak in the density of states below midgap. From the vibrational spectra we obtained the microstructure parameter, which is indicative of the amount of hydrogen bonded as polihydrides and/or to some sort of internal surface. We used the bond-breaking model to fit photoconductivity decay as a function of illumination time, and we found a correlation between the Staebler–Wronski susceptibility and the microstructure parameter. This would mean that the stability of the material concerning light-induced degradation is related to the way hydrogen is attached in the amorphous network. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contrasting effects of ion implantation and thermal annealing on structural and magnetic properties of Co/Pd multilayers have been studied. Ion implantation causes local damage to the multilayers, resulting in enhanced magnetization due to the polarization of the neighboring Pd. Thermal annealing generates massive interdiffusion across the interfaces into the formation of Co-Pd alloys with a lower magnetization. Effects on coercivity and remanence have also been studied.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5262-5266 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization behavior of Co/Pd multilayers has been analyzed as a function of the degree of interfacial mixing among the Co and Pd layers. Controlled atomic mixing was induced by low-dose and low-flux ion implantation and a follow-up of the structural status of the samples was made by simulation of the high-angle x-ray-diffraction data. Values of the saturation magnetization as a function of the broadness of Co concentration profile are presented and explained by a simple model based on the parameters obtained from the x-ray simulations.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2466-2471 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetizing, demagnetizing, and remanent magnetization curves for [Co(12 Å)/Ag(60 Å)]×15 multilayered/granular films thermally treated have been measured. The changes of the giant magnetoresistance and the interaction effects have been explained as a result of the structural, morphological, and magnetic evolution of the samples as a function of the thermal treatment. It has been inferred that for samples annealed at temperatures lower than 360 °C, the changes of the giant magnetoresistance come from the misalignment of the magnetic moments of the Co particles formed during annealing. A strong correlation between the giant magnetoresistance and the magnetic interaction effects has been found for samples annealed at temperatures higher than 360 °C: the giant magnetoresistance is degraded as the demagnetizing interparticle interactions are increased. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 339-348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental and modeling results for the subgap absorption coefficient of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) in order to explore the limitations of the constant photocurrent method (CPM). To properly model the subgap absorption coefficient, we have developed a simulation computer program including all the possible optical and thermal transitions between gap and extended states. Tail states are assumed to be either donor- or acceptorlike and midgap states are assumed to be amphoteric. The defect-pool model is also incorporated in our analysis. We have fitted several experimental dc-CPM spectra by using a standard set of parameters for the density of states. Our analysis demonstrates that in undoped samples the true absorption coefficient and the density of midgap states are underestimated by the CPM measurement. This is due to a nonconstant electron lifetime in the energy range between 0.8 and 1.2 eV. On the other hand, we show that in n-doped or p-doped samples, the CPM provides the correct answer. The energy range for the Fermi level where the CPM fails in a-Si:H is clearly established. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1488-1492 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of noninteracting single-domain particles whose anisotropy is made up of a cubic magnetocrystalline and a uniaxial components were investigated. Various directions of the uniaxial anisotropy were considered and the dependencies of the reduced remanence as a function of the ratio between the two anisotropies were obtained. It was found that for sufficiently strong uniaxial anisotropy and random arrangement of the particle orientations, reduced remanence lower than 0.5 is, in general, an intrinsic property of the system due to the negative remanent magnetization of some of the particles. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7007-7009 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental magnetoresistance, magnetization, and remanence data for CoCu granular films obtained by electron beam codeposition, subsequently submitted to a thermal treatment. The magnetization measurements show coexistence of superparamagnetic and ferromagnetic (or blocked superparamagnetic) Co grains. By modeling the experimental magnetization curves, the distribution function of the superparamagnetic particle size, the volume fraction of the blocked part of the Co particles, and their saturation magnetization are obtained. δM plots are constructed using the remanence curves. A correlation between the changes of the δM parameters and those of the giant magnetoresistance, caused by the annealing, is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3047-3053 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of annealing on the structural, magnetic, and magnetotransport properties of melt-spun Co10Cu90 granular alloys were investigated. The interaction effects were studied from both remanent magnetization and magnetotransport data, using two different methods to reach the demagnetized state, ac and dc demagnetization. The analysis of the structural evolution and interaction strength between the magnetic clusters clearly shows the role of some structural parameters (particle size and density, interparticle distance) and the degree of magnetic correlation in the magnetic field response of the resistance in these inhomogeneous systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1858-1860 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co(15 A(ring))/Ag(60 A(ring)) multilayers produced by electron beam deposition on a 50 A(ring) chromium buffer layer over a Si(111) wafer have been studied by magnetoresistance, saturation magnetization, coercivity, and anisotropy. Annealing at various temperatures produces striking effects on the observed physical properties, such as an improvement on the value of the magnetoresistance associated to a "back-diffusion'' process in the Co/Ag interfaces. This leads one to believe that interface roughness is indeed most important to understanding the connection between giant magnetoresistance and antiferromagnetic coupling, as well as the behavior of coercivity vs interface anisotropy in these materials.
    Type of Medium: Electronic Resource
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