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  • 1
    Electronic Resource
    Electronic Resource
    Passivation of GaAs (100) using selenium sulfide (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4384-4387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical and electronic aspects of a GaAs (100) surface passivated by selenium sulfide (SeS2) have been investigated by x-ray photoelectron spectroscopy and photoluminescence. It has been observed that this treatment gives rise to an arsenic selenide (As2Se3) terminated surface. No S—GaAs bonds were observed. The remarkable electronic properties and the formation of the chemically and thermally stable As2Se3 phase reveals the successful passivation. Passivation of GaAs in single step and identification of a single selenium species on the surface are considered to be the major advantages of using SeS2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352775
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  • 2
    Electronic Resource
    Electronic Resource
    Iron nanoparticles in copper matrix prepared by sol-gel route (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3832-3834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron particles having diameters around 8 nm and loosely packed with nanosized copper particles have been prepared by a sol-gel route. The samples exhibit coercivities in the range 200 to 500 Oe that are typical of single-domain iron grains. The Mössbauer spectrum is consistent with the presence of α-Fe particles in the system. However, a finite value of the isomer shift is obtained that is ascribed to possible electron transfer between the iron atoms and the surrounding copper matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352285
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6274-6278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363703
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  • 4
    Electronic Resource
    Electronic Resource
    Gas-assisted focused-ion-beam lithography of a diamond (100) surface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A focused Ga-ion beam is used to conduct lithography on a diamond (100) surface with the assistance of various gases (Cl2, O2, and XeF2). The beam-induced dilation and sputtering of the surface are measured by atomic force microscope. The dilation is found to be insensitive to the presence of assisting gases at low doses, while the sputtering is enhanced by O2 and XeF2 at high doses. The topographic evolution as a function of the ion dose is well described by a proposed semiempirical equation. Combining physical sputtering and XeF2-assisted etching, the lithographic process has been used to fabricate submicron structures on diamond surfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125116
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  • 5
    Electronic Resource
    Electronic Resource
    Atmospheric Lee Waves (1996)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Fluid Mechanics 28 (1996), S. 429-476 
    Details
    ISSN: 0066-4189
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.fl.28.010196.002241
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical resistivity of nanocrystalline PbS grown in a polymer matrix (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1159-1161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbS particles of average diameters ranging from 9.9 to 18.0 nm have been synthesized within a polyacrylamide matrix. The percolative chains of these particles exhibit intrinsic semiconducting behavior at temperatures higher than 340 K. The estimated band gap for these particles are found to be much higher than that of bulk PbS being in the range 1.03 to 1.49 eV. The low-temperature conductivity of these composites appears to be controlled by an electron tunneling mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110838
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  • 7
    Electronic Resource
    Electronic Resource
    High dielectric permittivity in sol-gel derived SiO2-As2O3 glasses (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 414-416 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Glasses in the system x As2O3(1−x) SiO2 with 0.05〈x〈0.16 have been prepared by sol-gel route. They exhibit anomalously large dielectric permittivity in the temperature range 275 to 325 K. The permittivity values are found to be in the range 400–100 000 depending on the glass composition and the frequency of measurement. This effect is believed to arise due to a fairly large value of ratio [As5+]/[As3+] in these glasses and its drastic change as a function of temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106388
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic force microscopy of selenium sulfide passivated GaAs (100) surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 415-417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118079
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  • 9
    Electronic Resource
    Electronic Resource
    Infra-orbital nerve block for relief of postoperative pain following cleft lip surgery in infants (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 49 (1994), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The study was conducted on 20 infants scheduled for cleft lip repair surgery. Ten were randomly allocated to receive bilateral infra-orbital local anaesthetic nerve blocks at the conclusion of surgery with the other 10 receiving bilateral ‘sham’blocks as controls. Postoperative pain relief was assessed using a pain assessment scoring system and by monitoring arterial blood pressure, heart rate and respiratory rate. The mean pain assessment score was significantly higher (i.e. better) (p 〈 0.05) in the infants receiving the local anaesthetic block. There were no significant statistical or clinical differences in the physiological measurements between the two groups. The infants receiving the block required less analgesia in the postoperative period. The results suggest that infra-orbital nerve block is a simple and effective means of achieving postoperative analgesia after cleft lip repair surgery in infants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1994.tb03484.x
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  • 10
    Electronic Resource
    Electronic Resource
    Purification of a mannose/glucose-specific hemagglutinin/lectin from a Vibrio cholerae O1 strain (1999)
    Oxford, UK : Blackwell Publishing Ltd
    FEMS immunology and medical microbiology 23 (1999), S. 0 
    Details
    ISSN: 1574-695X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: A cell-associated mannose/glucose-specific hemagglutinin (MSHA) has been purified from a strain of Vibrio cholerae O1 by chromatography on a chitin column followed by affinity purification on Sephadex G100. The purified protein gave a single stained band of 40 kDa by SDS-PAGE, exhibited high affinity towards d-mannose and d-glucose but was resistant to l-fucose and N-acetyl-d-glucosamine. The purified MSHA was revealed as a globular form of protein under electron microscope. In immunodiffusion tests the purified MSHA produced a single precipitin band against homologous antisera and antisera raised against the whole cell bacteria without any reactivity towards antisera raised against the purified N-acetyl-d-glucosamine-specific lectin of the same bacterial strain. Immunogold labelling confirmed the location of hemagglutinin on the surface of the bacteria. Purified MSHA reacted strongly with sera from convalescent cholera patients in immunodiffusion tests.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1574-695X.1999.tb01242.x
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