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  • 1995-1999  (1)
  • 1990-1994  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 560-562 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm3+-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm3+ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm3+-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 621 (1995), S. 1351-1357 
    ISSN: 0044-2313
    Keywords: Dimethylgallium-bis(trimethylsilyl)phosphane, X-ray structure, vibrational spectrum, force constants ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Dimethylgallium-bis(trimethylsilyl)phosphane, Vibrational Spectrum, Force Constants, and X-Ray StructureDimeric dimethylgallium-bis(trimethylsilyl)phosphane, [Me2Ga—P(SiMe3)2]2, (Me = CH3) is synthesized from Me2GaCl and P(SiMe3)3 in hot toluene. The compound crystallizes in the triclinic space group P1 with the cell parameters a = 909.8(2), b = 960.5(2), c = 971.6(2) pm; α = 76.75(1)°, β = 80.35(1)°, γ = 63.94(1)° and Z = 1 (dimer). The Ga—P distances are 244.8 and 245.2 pm, the ring angles are 91.8° (Ga—P—Ga) and 88.2° (P—Ga—P), respectively. The vibrational spectrum (IR and Raman for the solid) has been measured and assigned; force constants calculations are carried out for the skeleton [C2Ga—P(SiC3)2]2 using Fleischhauers [26] PC-program.
    Notes: Dimeres Dimethylgallium-bis(trimethylsilyl)phosphan, [Me2Ga—P(SiMe3)2]2 (Me = CH3), wird aus Me2GaCl und P(SiMe3)3 in heißem Toluol synthetisiert. Die Verbindung kristallisiert in der triklinen Raumgruppe P1 mit den Gitterkonstanten a = 909,8(2), b = 960,5(2), c = 971,6(2) pm; α = 76,75(1)°, β = 80,35(1)°, γ = 63,94(1)° und Z = 1 (Dimer). Die Ga—P-Abstände des planaren Ga2P2-Gerüsts betragen 244,8 und 245,2 pm, die Ringwinkel 91,8° (Ga—P—Ga) bzw. 88,2° (P—Ga—P). Das Schwingungsspektrum (IR und Raman des Feststoffs) wurde aufgenommen und zugeordnet, für das Molekülskelett [C2Ga—P(SiC3)2]2 werden mit dem PC-Programm von Fleischhauer [26] Kraftkonstantenrechnungen durchgeführt.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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