ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hydrogenated amorphous germanium carbide (a-Ge1−xCx@B:H ) films were prepared by rf sputtering, at various rf power levels and mixtures of Ar, H2, and propane. As in the case of a-Si:H rf sputtered under similar conditions, the concentration of Ge–H bond, as determined by the IR absorption spectra, and the Tauc determined optical gap, generally increase as the rf power is decreased. The optical gap of the a-Ge1−xCx@B:H films range from 0.85–2.3 eV, and the electron-spin-resonance defect spin densities from 6.5×1017 to 3×1018 spins/cm3. Auger spectroscopy was used to determine the C/Ge ratio and indicated that in most of the samples, this ratio was (approximately-less-than)0.15. Isochronal annealing up to 400 °C indicated that (i) Ge-C segregation effects already initiated at 100 °C are greatly enhanced above 300 °C, (ii) at 300 °C C–H bonds are formed at the expense of Ge–H ones, and (iii) all of the hydrogen bonded to Ge and most of that bonded to carbon evolve out of the sample at or slightly below 400 °C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339710
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