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  • 1
    Electronic Resource
    Electronic Resource
    Heterozygosities and allelic frequencies of 358 dinucleotide-repeat marker loci in the Japanese population (1998)
    Springer
    Journal of human genetics 43 (1998), S. 165-168 
    Details
    ISSN: 1435-232X
    Keywords: Key words Microsatellite ; Heterozygosity ; Japanese ; population
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract We examined 64 normal Japanese chromosomes to determine the heterozygosities and allelic frequencies of 358 dinucleotide-repeat marker loci spanning the whole human genome. Comparisons of the data for each marker in the Japanese population sample with data for the same markers among Caucasian samples in the Genome Database (GDB) revealed a slightly lower average of heterozygosity in Japanese (71% vs 79%). Although the majority of the markers were as informative as in Caucasians, some in our sample were uninformative due to low heterozygosity; 38 loci revealed heterozygosities lower than 50% and 11 of these were less than 30%. Furthermore, allelic distributions at many of the marker loci were quite different in the two racial groups. Since such differences will influence statistical analyses between markers and disease loci, our data will be essential for linkage analyses, sib-ship pair analyses, and association studies involving the Japanese population. Therefore we have archived this database on a home page on the Internet (http://www.ims.u-tokyo.ac.jp/nakamura/Yamane.html).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100380050062
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  • 2
    Electronic Resource
    Electronic Resource
    Oblique collision of modified Korteweg–de Vries ion-acoustic solitons (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 3466-3470 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional propagation and oblique collision of modified Korteweg–de Vries (mKdV) ion-acoustic solitons in a plasma with negative ions have been investigated experimentally. At a critical concentration of negative ions, both compressive and rarefractive mKdV solitons exhibit a resonance interaction at a particular amplitude when the colliding angle is fixed. The amplitude is found to be equal for both compressive and rarefractive solitons. The collided solitons suffer a positive phase shift during the interaction. The new solitons formed during the resonant interaction are found to obey the energy and momentum conservation laws of the mKdV solitons for three-wave interaction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873607
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  • 3
    Electronic Resource
    Electronic Resource
    Performance and operation of a beam chopping system for a cyclotron with multiturn extraction (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1714-1719 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A beam chopping system for a cyclotron is in operation at the JAERI cyclotron facility. A combination of a pulse voltage chopper in the injection line and a sinusoidal voltage chopper after the exit of the cyclotron is adopted to produce beam pulses spaced at 1 μs–1 ms intervals from natural cyclotron beams. The chopping system was designed according to a simple formulation of the chopping process in which the multiturn extraction was taken into account. Performance of the chopping system was experimentally proved to satisfy requirements of the design. In actual operation to produce beam pulses at long intervals, however, the number of the multiturn extraction is usually larger than the assumed value in the design because of a large phase acceptance of the cyclotron. Careful tuning of the acceleration phase width or the base magnetic field of the cyclotron is necessary to reduce it. It is essential to strictly define the acceleration phase of injected beams in the central region of the cyclotron to improve this situation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147980
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  • 4
    Electronic Resource
    Electronic Resource
    Expression of cathepsin D and B in invasion and metastasis of squamous cell carcinoma (1997)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 137 (1997), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: To determine the involvement of proteinases with hydrolytic activity towards extracellular matrix and basement membrane, in invasion and metastasis of tumour cells, the expression of cathepsin D, an aspartic proteinase, and cathepsin B, a cysteine proteinase, was studied. Formalin-fixed paraffinembedded specimens from 13 patients who had squamous cell carcinomas (SCC) with local recurrence, skin and/or lymph node metastasis were examined. Cathepsin D stained intensely as a granular pattern (mature enzyme) in tumour cells of 69% of primary lesions and all the secondary lesions of the patients with SCC. Cathepsin B stained more intensely in SCC cells of all of the primary and secondary lesions than in normal epidermis: staining patterns were almost diffuse (procathepsin B). Granular and diffuse patterns (mature enzyme of cathepsin D and procathepsin B, respectively) appeared in the outer and inner parts of tumour islands, respectively. The presence of the active mature form of cathepsin D and procathepsin B in metastatic skin lesions of SCC was confirmed by Western blotting analysis. The presence and localization of the active mature form of cathepsin D suggests that activated cathepsin D may be involved in the invasion and metastasis of SCC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.1997.18501943.x
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  • 5
    Electronic Resource
    Electronic Resource
    Important factors included in nondestructive readout of GMR MRAM (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6642-6642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We proposed a new type of magnetoresistive random access memory (MRAM) using a weakly coupled GMR effect. It operates on the general principle of storing a binary digit in hard component and sensing its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered. It is believed that this structure could have nondestructive readout (NDRO) characteristics. However, in experiments we found that NDRO was not always achieved; i.e., NDRO was dependent on the polarity of the excitation field. We take an example for mode "0'' (corresponding to a + remanent state). Although tests involving 3×108 plus excitation pulses indicated that the element was still stable, stability against minus disturb pulses could not be expected. The remanent state of 0 was degrading gradually and was finally destroyed after nenormous numbers of readout switching. An analytical model, in which the hard component follows the Rayleigh law, can explain the above phenomenon. It is because the irreversible magnetization processes cause disturbed states (0′ or 1′). Obviously the worst case for mode 0 is being excited by continous minus pulses whereas the worst case for mode 1 is being excited by continous plus pulses. We think that two methods will be effective to eliminate the unstability. One is to obtain a rectangular hysteresis loop for the hard component. The other is to imporve the excitation method, for example, to employ bipolar pulses for excitation signals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362444
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  • 6
    Electronic Resource
    Electronic Resource
    Open tube zinc diffusion into GaAs0.8P0.2 using AlN and SiNx cap films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2995-3002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The open-tube diffusion of zinc in GaAs0.8P0.2 from a zinc-doped silica film was investigated in detail. Aluminum nitride (AlN) and silicon nitride (SiNx) films were used as the anneal caps. The dependence of diffusion depth on the thickness of an AlN-cap was found to differ from its dependence on SiNx-cap thickness. The selective masked diffusion of zinc using an AlN diffusion-mask was also systematically studied. The diffusion depth in selective masked diffusion was found to depend on both AlN-cap thickness and AlN-diffusion-mask thickness. The experimental results suggest that diffusion depth is not necessarily governed by either cap thickness or diffusion-mask thickness. From this standpoint, the role of film stress on diffusion depth was then quantitatively investigated. It was found that diffusion depth can be scaled well with total film stress in the measured film-thickness range. In this sense, it can be concluded that total film stress is the primary factor that determines the diffusion depth under the measured diffusion conditions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362652
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 883-885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of GaAs ridge structure formation by molecular beam epitaxy on a patterned substrate has been investigated using an ultrahigh vacuum atomic force microscope. It is found that the morphology of ridges can be quite irregular with random formation of various facets in the intermediate phase of growth, but self-smoothing processes of the lateral facets take place later on, leading to very sharp and smooth ridge structures in the end. The ridge top is quite sharp and straight with the height fluctuation of within 1–2 nm over the length of 1.4 μm. The role of the Ga atom flows from the side (111)B surfaces to the top (001) surface and their local modulations are considered to account for these observations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118303
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  • 8
    Electronic Resource
    Electronic Resource
    Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 105-107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant tunneling of electrons through a 20 nm scale InAs quantum dot bound by a pair of very thin AlAs barriers is studied. A well-resolved composite peak resulting from the ground 1s states was observed at 4.2 K in current–voltage characteristics. By investigating the effects of inplane magnetic fields, the shape of the wave function and the spatial extent of the first two electronic states are clarified. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119276
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  • 9
    Electronic Resource
    Electronic Resource
    Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 275-277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115661
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  • 10
    Electronic Resource
    Electronic Resource
    A dusty double plasma device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2345-2348 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel dusty plasma device to create spatially and temporally uniform steady state dusty plasma is described. An ultrasonic vibrator is used to vibrate a dust dispenser which disperses the dust uniformly through a fine mesh. A dusty plasma of large dimension with controllable dust density is produced. Measured dusty plasma parameters are compared with existing theories. Some experimental results related to propagation characteristics of dust-ion-acoustic waves in a dusty plasma column are presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149761
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