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  • 1995-1999  (45)
  • 1985-1989  (39)
  • 1940-1944  (2)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 51 (1986), S. 2702-2706 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 4456-4461 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic ground state of isolated Cr3+ introduced into the title compounds has been investigated with electron spin resonance and electron-nuclear double resonance spectroscopy. Simultaneously a multiple scattering (MS) Xα study of the (CrCl6)3− cluster has been performed. The experimental results agree with a cubic Cr site. They further show evidence for strong quadrupole interaction at the anion neighbor nuclei and for observably different covalency in the two hosts. Rather good agreement is found between the predictions of the MS Xα model and the experimental superhyperfine interaction constants but not with the Cr-hyperfine structure constant. It is suspected that the second neighboring Cs play a non-negligible role in the electronic structure of the cluster.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 522-524 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new technique for synthesizing small batches of oxide-based ceramic and glass materials from high purity powders is described. The method uses continuous wave CO2 laser beam heating of material held on a water-cooled copper hearth. Contamination which would normally result during crucible melting is eliminated. Details of the technique are presented, and its operation and use are illustrated by results obtained in melting experiments with a-aluminum oxide, Y–Ba–Cu–O superconductor material, and the mixtures, Al2O3–SiO2, Bi2O3–B2O3, Bi2O3–CuO. Specimen masses were 0.05–1.5 g. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 70 (1998), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: We have previously developed an in vitro model for traumatic brain injury that simulates a major component of in vivo trauma, that being tissue strain or stretch. We have validated our model by demonstrating that it produces many of the posttraumatic responses observed in vivo. Sustained elevation of the intracellular free calcium concentration ([Ca2+]i) has been hypothesized to be a primary biochemical mechanism inducing cell dysfunction after trauma. In the present report, we have examined this hypothesis in astrocytes using our in vitro injury model and fura-2 microphotometry. Our results indicate that astrocyte [Ca2+]i is rapidly elevated after stretch injury, the magnitude of which is proportional to the degree of injury. However, the injury-induced [Ca2+]i elevation is not sustained and returns to near-basal levels by 15 min postinjury and to basal levels between 3 and 24 h after injury. Although basal [Ca2+]i returns to normal after injury, we have identified persistent injury-induced alterations in calcium-mediated signal transduction pathways. We report here, for the first time, that traumatic stretch injury causes release of calcium from inositol trisphosphate-sensitive intracellular calcium stores and may uncouple the stores from participation in metabotropic glutamate receptor-mediated signal transduction events. We found that for a prolonged period after trauma astrocytes no longer respond to thapsigargin, glutamate, or the inositol trisphosphate-linked metabotropic glutamate receptor agonist trans-(1S,3R)-1-amino-1,3-cyclopentanedicarboxylic acid with an elevation in [Ca2+]i. We hypothesize that changes in calcium-mediated signaling pathways, rather than an absolute elevation in [Ca2+]i, is responsible for some of the pathological consequences of traumatic brain injury.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4971-4975 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation in silicon layers prepared by plasma-enhanced chemical-vapor deposition using silane dilution by hydrogen has been studied by infrared spectroscopy (IR) and elastic recoil detection analysis (ERDA). The large range of silane dilution investigated can be divided into an amorphous and a microcrystalline zone. These two zones are separated by a narrow transition zone at a dilution level of 7.5%; here, the structure of the material cannot be clearly identified. The films in/near the amorphous/microcrystalline transition zone show a considerably enhanced hydrogen incorporation. Moreover, comparison of IR and ERDA and film stress measurements suggests that these layers contain a substantial amount of molecular hydrogen probably trapped in microvoids. In this particular case the determination of the total H content by IR spectroscopy leads to substantial errors. At silane concentrations below 6%, the hydrogen content decreases sharply and the material becomes progressively microcrystalline. The features observed in the IR-absorption modes can be clearly assigned to mono- and/or dihydride bonds on (100) and (111) surfaces in silicon crystallites. The measurements presented here constitute a further indication for the validity of the proportionality constant of Shanks et al. [Phys. Status Solidi B 110, 43 (1980)], generally used to estimate the hydrogen content in "conventional'' amorphous silicon films from IR spectroscopy; additionally, they indicate that this proportionality constant is also valid for the microcrystalline samples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6943-6946 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of crystalline silicon samples are measured for temperatures below 1000 K. The optical transitions are analyzed in terms of excitonic and band-to-band transitions. From the modeling of the line shape we are able to determine the fundamental indirect band gap for temperatures up to 750 K. The temperature dependence follows the Varshni equation with Eg(0)=1.1692 eV, α=(4.9±0.2)×10−4 eV/K and β=(655±40) K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1820-1822 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe a light-induced on–off switching of the selective donor–acceptor pair excitation in bulk-grown semi-insulating GaAs. The spectral dependence of the switching process is related to the metastability of the EL2 defect. In the ground state, this As-antisite related midgap donor compensates the shallow acceptors and is responsible for the semi-insulating properties of the material. The loss of the shallow acceptor compensation, that accompanies the transfer of the EL2 to its metastable state leads to the observed absorption and luminescence quench of the shallow donor–acceptor pairs. We exploit these effects in demonstrating optical data storage in semi-insulating GaAs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1426-1428 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deactivation of the acceptor indium after chemomechanical polishing of p-type silicon is shown to result from the formation of a complex involving the indium atom and a positively charged, extremely fast-diffusing defect X. In the temperature range from 220 to 280 K, the dissociation frequency ν of this complex and the diffusion coefficient D of the defect X are thermally activated and satisfy the expressions ν=ν0 exp(−Ed/kT) and D=D0 exp(−Ea/kT) with ν0=2.6×1012 s−1, Ed=0.690 eV, D0=5×104 cm2/s, and Ea=0.665 eV.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2525-2527 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly doped InP:Yb layers have been grown by adduct metalorganic vapor phase epitaxy at atmospheric pressure. Yb(MeCp)3, where Me=CH3 and Cp=n5-C5H5, was synthesized as Yb source material because of its relatively high vapor pressure at acceptable source temperatures. The layers were grown in a wide range of growth temperatures (560–670 °C) and Yb mole fractions (10−9–10−7). In photoluminescence experiments they showed strong Yb3+-4f emission. The layers were further characterized by Hall measurements and secondary-ion mass spectroscopy. In order to obtain n-type InP:Yb samples with high carrier concentrations we have grown InP layers double doped with S and Yb.
    Type of Medium: Electronic Resource
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