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  • 11
    Electronic Resource
    Electronic Resource
    Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6148-6160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the material, electrical, and optical properties of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness. We have modeled current transport in the 1.5 μm devices using thermionic field emission theory, and in the 4.0 μm devices using thermionic emission theory. We have obtained a good fit to the experimental data. Upon repeated field stressing of the 1.5 μm devices, there is a degradation in the current–voltage (I–V) characteristics that is trap related. We hypothesize that traps in the GaN are related to a combination of surface defects (possibly threading dislocations), and deep-level bulk states that are within a tunneling distance of the interface. A simple qualitative model is presented based on experimental results. For devices fabricated on wafers with very low background free electron concentrations, there is a characteristic "punch-through" voltage, which we attribute to the interaction of the depletion region with the underlying low-temperature buffer layer. We also report GaN metal–semiconductor–metal photodetectors with high quantum efficiencies (∼50%) in the absence of internal gain. These photodetectors have a flat responsivity above the band gap (measured at ∼0.15 A/W) with a sharp, visible-blind cutoff at the band edge. There is no discernible responsivity for photons below the band-gap energy. We also obtained record low dark current of ∼800 fA at −10 V reverse bias. The dark current and ultraviolet photoresponse I–V curves are very flat out to VR〉−25 V, and do not show evidence of trap-related degradation, or punch-through effects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367484
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  • 12
    Electronic Resource
    Electronic Resource
    Variable-depth calorimetry of a layered material (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2031-2035 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have investigated the use of frequency variation in ac calorimetry in the measurement of thermal quantities within controllable distances of the sample heater and thermometer. This technique, useful in studies of heterogeneous samples where only a small part of the sample is of interest, e.g., surfaces, thin films, and interfaces, is applied to study the thermal properties of a test sample made from indium (In) sandwiched between layers of bulk gallium arsenide. We measure and analyze the frequency dependence of the thermal response of the sample, as well as the variation with frequency of the relative size of the anomaly observed at the In superconducting transition. The data are consistent with a model assuming a thermal diffusion-limited sampling volume.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140020
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  • 13
    Electronic Resource
    Electronic Resource
    Optically switched resonant tunneling diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1104-1106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature photoinduced switching of an InGaAs/AlAs resonant-tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm−2 using 1.3 μm radiation, the resonant-tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small-signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113826
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  • 14
    Electronic Resource
    Electronic Resource
    High quantum efficiency dual wavelength resonant-cavity photodetector (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 535-537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new dual-wavelength, resonant-cavity photodiode is described. It has previously been shown that the resonant-cavity structure can achieve high quantum efficiencies in a relatively narrow spectral region with thin absorbing regions. In this letter, a dual wavelength mirror is incorporated into the cavity to achieve operation in two wavelength regions. Peak external quantum efficiencies greater than 50% were demonstrated at 730 and 910 nm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114004
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  • 15
    Electronic Resource
    Electronic Resource
    Thin multiplication region InAlAs homojunction avalanche photodiodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 783-784 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low excess noise in avalanche photodetectors (APDs) is desired for improved sensitivity and high-frequency performance. Gain and noise characteristics are measured for InAlAs p-i-n homojunction APDs that were grown with varying i-region widths on InP by molecular beam epitaxy. The effective ionization ratio k (β/α) determined by noise measurements shows a dependence on multiplication region width, reducing from 0.31 to 0.18 for multiplication region thicknesses of 1600–200 nm. This trend follows previously shown results in AlGaAs-based APDs, which exhibit reduced excess noise due to nonlocal multiplication effects. These results show that this effect is a characteristic of thin avalanche regions and is not a material-specific phenomenon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122000
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  • 16
    Electronic Resource
    Electronic Resource
    Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the improved device performance of GaN-based ultraviolet heterojunction photodiodes using a semi-transparent p-contact device structure. At a reverse bias of 10 V, these photodiodes exhibit a low dark current density of 0.3 nA/cm2. The external quantum efficiency is 38% at the band edge, with only a slight decrease at the shorter wavelengths. The forward current is 〉10 mA at Vf=5 V. Fitting of the forward current–voltage data to the diode equation yields a very low series resistance (Rs=62Ω), which results in a very fast decay of the time response. The improved performance afforded by the thin, semi-transparent, p-contact layer is due to an increase in the uniformity of the lateral field distribution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124942
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  • 17
    Electronic Resource
    Electronic Resource
    Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3405-3407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of important optoelectronic device utilize the InAlGaAs/InP material system. The reduction of carrier trapping at the In0.53Ga0.47As/In0.52Al0.48As heterointerface is advantageous towards improving both the quantum efficiency and frequency response of devices utilizing InGaAs active regions. Direct current and transient optical response characteristics were measured for p-i-n double-heterojunction photodiodes utilizing either abrupt or superlattice (SL) graded heterointerfaces. SL graded devices showed improved collection efficiency at electric fields 〈3 kV/cm and faster temporal response at electric field 〈70 kV/cm as compared to identical devices having abrupt interfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122757
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  • 18
    Electronic Resource
    Electronic Resource
    Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2405-2407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the temporal and the frequency response of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN. The best devices show a fast 10%–90% rise time of ∼23 ps implying a bandwidth of 〉15 GHz. These time domain data have been corroborated by direct measurement of the power spectral content. From this a cutoff frequency, f3 dB, of ∼16 GHz has been obtained. Analysis in terms of reverse bias and geometric scaling indicates that the photodetectors are transit-time limited. Modeling of the temporal behavior indicates that a slow component in the time and frequency response data is a consequence of the hole drift velocity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122448
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  • 19
    Electronic Resource
    Electronic Resource
    Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 542-544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the current transport mechanisms dominant at the Schottky interface of metal–semiconductor–metal photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness. We have modeled transport in the 1.5 μm devices using thermionic emission theory, and in the 4.0 μm devices using thermionic field emission theory. We have obtained a good fit to the experimental data. We hypothesize that traps in the GaN are related to a combination of surface defects (possibly threading dislocations), and deep-level bulk states that are within a tunneling distance of the interface. A simple qualitative model is presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120752
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  • 20
    Electronic Resource
    Electronic Resource
    Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3883-3885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gain and noise of thin GaAs and Al0.2Ga0.8As homojunction avalanche photodiodes were measured. The gain and the excess noise factor were found to be significantly lower than would be expected using ionization coefficients reported in the literature. The discrepancy is believed to be due to physical effects that become significant in thin multiplication layers. It is shown that the gain and excess noise under electron injection can be accurately fit using conventional models with width-dependent ionization coefficients. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120533
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