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Digitale Medien

Optically switched resonant tunneling diodes (1995)

Moise, T. S. ; Kao, Y.-C. ; Garrett, L. D. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1104-1106

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The room-temperature photoinduced switching of an InGaAs/AlAs resonant-tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm−2 using 1.3 μm radiation, the resonant-tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small-signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.113826

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