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  • 1995-1999  (1)
  • 1985-1989  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 29 (1989), S. 907-910 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A negative resist based upon photo-acid initiated cationic polymerization of an epoxy resin (1, 2) was reported in the early eighties with the advent of onium salts (3-5). An efficient acid generating onium salt, triphenylsulfonium hexafluoroantimonate (6), absorbs light in the deep UV producing acid upon direct photolysis in this region of the spectrum. The resin component of such a negative resist system must be optically transparent over the exposure wavelengths to obtain vertical image profiles. Another difficulty often encountered with crosslinking negative resists is swelling of the crosslinked matrix during development with organic solvents. This swelling manifests itself in distorted images and/or complete adhesion loss, especially when submicron features are involved. Our goal has been to address these problems and develop an organic developable deep UV resist capable of providing submicron images. Optically transparent commercial resins, styrene-allyl alcohol copolymers, have been converted to glycidyl ethers, thereby providing cationically polymerizable functionalities. Careful choice of the resin was made to obtain reactive ion etch resistance, thermal stability, good adhesion, and coating properties. The synthetic procedure and characterization of the epoxy resin will be presented. The effect of the molecular weight distribution upon swelling during development and general solubility properties also will be discussed. Resist formulations exhibited sensitivities of 19 to 30 mJ/cm2 on a Perkin Elmer 500 in the deep UV (UV2) mode. The electron beam sensitivity is 3 to 5 μC/cm2 at 20 KeV. Submicron images have been generated in both optical and electron beam lithography.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 58 (1995), S. 179-183 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Simple cresol epoxy novolac resins have been modified with hydrophilic chains producing surfactant-modified epoxy resins. They have been formulated with catalytic amounts of photoacid generator and solvent and subsequently exposed to deep UV light. With respect to their photochemistry, they behave as conventional chemically amplified negative acting materials, however, their overall lithography is somewhat more novel. For example, they have high contrast behavior and unexposed regions swell in aqueous base developer and peel-off into solution through an apparent adhesion loss at the wafer-photoresist interface. © 1995 John Wiley & Sons, Inc.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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