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  • 1995-1999  (1)
  • 1985-1989  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    A plasma etching model based on a generalized transport approach (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2498-2507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A plasma etching model for rf-discharge plasma reactors has been developed. The model considers the linear and nonlinear effects on plasma kinetics of atomic effects, ion chemistry, space-charge effects, and the plasma/surface interactions. The linear effects of physical and chemical etching and the nonlinear effects of the "enhanced'' physical and chemical etching, which are due to the plasma/surface interactions, are also discussed. New generalized plasma transport equations are introduced. These equations are valid for collisional to weakly collisional plasmas [λ/L(approximately-less-than)O(1)], where λ is the ion mean free path and L is the smallest of the scale lengths of the gradient in the electric field or in the macroscopic plasma parameters. The transport equations are used to calculate the magnitude and profile of the plasma particle and energy fluxes for the etching model. The model has shown good agreement with experimental etch rates of silicon dioxide, borophosphosilicate glass, and photoresist.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339461
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A generalized plasma etching model (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4199-4207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A generalized plasma etching model has been developed. The new model is a generalization of our previous model presented in a recent paper [E. Zawaideh and N. S. Kim, J. Appl. Phys. 62, 2498 (1987)]. The new model includes the effects of multi-ion and multineutral gas species. New generalized plasma transport equations are also introduced. These equations are derived for multi-ion species. No restrictions on the anisotropy of the ion distribution functions are imposed. The new generalized plasma transport equations are valid for collisional to weakly collisional plasma [λ/L≤0(1)], where λ is the ion mean free path and L is the smallest of the scale lengths of the gradient in the electric field or in the macroscopic plasma parameters. A new particle balance model has also been introduced which incorporates the effects of gas composition, gas flowrate, pumping rate, ion and neutral gas chemistry, and atomic reactions on the neutral gas and plasma parameters (e.g., densities and pressures of the various neutral gas and plasma species). As an example, silicon dioxide (SiO2) plasma etching using carbon tetrafluoride (CF4) gas is used to illustrate this new generalized model. The model has shown good agreement with the experimental etch rates of SiO2 for various plasma and reactor parameters (e.g., neutral gas pressure, CF4 flowrate, and rf power).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341335
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Simulation for static and dynamic performance of a superconducting analog-to-digital converter (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3515-3518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The simulation of a superconducting flux counting analog-to-digital (A/D) converter for advanced high-speed signal processing systems is performed to investigate its performance and sensitivity. This report describes the algorithms and the results associated with simulating the whole sequence (count-store-readout-reset-count). Parameter sensitivities are also checked and optimized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335777
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Extreme ultraviolet line emission at 24.7 nm from Li-like nitrogen plasma produced by a short KrF excimer laser pulse (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 884-886 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently using KrF high power laser (248 nm; 350 fs; 5.0×1016 W/cm2) in the Rutherford Appleton Laboratory an experimental search for recombination extreme ultraviolet (XUV) laser action in Li-like nitrogen ions was performed. To understand the experimental results of line emission at 24.7 nm in the 3d5/2–2p3/2 transition of the Li-like nitrogen ion a simulation was undertaken using a one-dimensional Lagrangian hydrodynamic code. From the simulation results, we confirmed that there was nonlinear dependence of spectral line emission on the gas density which was well matched to the experimental results. Only a six times increase of the 24.7 nm emission intensity was obtained when the plasma length was increased 1000 times from 1 μm as an optically thin case to 1 mm. Also, the spatial profile of the electron density and temperature was obtained and the electron temperature was about 40–50 eV which was too high for the optical field ionization x-ray lasing. We could not find evidence of x-ray laser gain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117976
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Generalized parallel heat transport equations in collisional to weakly collisional plasmas (1988)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 31 (1988), S. 3280-3285 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new set of two-fluid heat transport equations that is valid from collisional to weakly collisional limits is derived. Starting from gyrokinetic equations in flux coordinates, a set of moment equations describing plasma energy transport along the field lines of a space- and time-dependent magnetic field is derived. No restrictions on the anisotropy of the ion distribution function or collisionality are imposed. In the highly collisional limit, these equations reduce to the classical heat conduction equation (e.g., Spitzer and Härm or Braginskii), while in the weakly collisional limit, they describe a saturated heat flux (flux limited). Numerical examples comparing these equations with conventional heat transport equations show that in the limit where the ratio of the mean free path λ to the scale length of the temperature gradient LT approaches zero, there is no significant difference between the solutions of the new and conventional heat transport equations. As λ/LT→1, the conventional heat conduction equation contains a significantly larger error than (λ/LT)2. The error is found to be O(λ/L)2, where L is the smallest of the scale lengths of the gradient in the magnetic field, or the macroscopic plasma parameters (e.g., velocity scale length, temperature scale length, and density scale length). The accuracy of the flux-limited model depends significantly on the value of the flux limit parameter which, in general, is not known. The new set of equations shows that the flux-limited parameter is a function of the magnetic field and plasma parameter profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866940
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    A generalized plasma etching model with an oblique magnetic field (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1113-1121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A generalized plasma etching model with an oblique magnetic field has been developed. The new model is a continuation of our previous models presented in recent papers [E. Zawaideh and N. S. Kim, J. Appl. Phys. 62, 2498 (1987); 64, 4199 (1988)]. New generalized plasma transport equations that are valid in the limit of large drifts (e.g., E×B drift, where E and B are the electric and magnetic field vectors, respectively) are introduced. These new generalized plasma transport equations are also valid for collisional [λ/L(very-much-less-than)1] to weakly collisional plasmas [λ/L∼0(1)], where λ is the ion mean free path and L is the smallest of the scale lengths of the electric field or the gradient in the macroscopic plasma parameters. The new plasma transport equations coupled with both Poisson's equation and our previous generalized etching equations are used to model the magnetron plasma etching processes. As an example, silicon (Si) plasma etching with a mixture of helium (He) and chlorine (Cl2) gases is applicable to illustrate this new generalized model. The model has shown a definite trend toward agreement with the experimental etch rates of Si for various plasma and reactor parameters (e.g., neutral gas pressure and rf power).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343450
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    Paper (German National Licenses)
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