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  • 1995-1999  (5)
  • 1985-1989  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1512-1514 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs was selectively grown on GaAs substrates patterned with SiO2 by conventional molecular beam epitaxy (MBE). No growth was found on SiO2, except for small GaAs particles, when the substrate temperature was above 700 °C under 1.2×10−5 Torr arsenic pressure. With the increase in the substrate temperature, the selectivity was better while the growth rate decreased. At 775 °C, no growth occurred, even on GaAs. Selective epitaxial growth of GaAs by MBE is promising for application to device fabrications.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 168-171 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage and contamination-free chemical dry etching of (100)GaAs and (100)InP by Cl2 was demonstrated using a new ultrahigh-vacuum dry-etching molecular-beam-epitaxy (MBE) system. This system consists of a combined etching chamber, an MBE chamber, and a sample preparation chamber, all at ultrahigh vacuum. A mirrorlike surface was obtained after etching at substrate temperatures ranging from 300 to 400 °C for GaAs, and from 200 to 400 °C for InP. In situ reflection high-energy electron diffraction observations were accomplished for GaAs, with a mirrorlike surface after etching, and (2×4) surface reconstruction was observed. Results show that a smooth surface was formed at an atomic level.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 210-214 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide films are sputter deposited on polycrystalline silicon (polysilicon) in an oxygen-argon atmosphere at 200 °C. Electrical conduction and breakdown are measured at various gate fields and temperatures. In addition to the Fowler–Nordheim tunneling current reported for thermal oxide, the sputter-deposited films have another, newly identified high-activation-energy current as electrical conduction mechanisms. The high-activation-energy current contribution to the total current is considerably reduced by increasing the oxygen mixing ratio and/or by decreasing the sputtering gas pressure, resulting in a considerable total current reduction. High-activation-energy current contributes little to the triggering of breakdown, unlike Fowler–Nordheim tunneling injections. In contrast to polysilicon thermal oxide, sputter-deposited films on polysilicon have no observable field enhancement in Fowler–Nordheim tunneling current, which indicates smooth surfaces. Thus, electrical properties in oxygen-argon sputter-deposited films on polysilicon are explained by high-activation-energy current and Fowler–Nordheim tunneling current.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2360-2363 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide films, 8–100 nm thick, are sputter deposited in an oxygen-argon atmosphere onto a silicon substrate at 200 °C. Electrical conduction and dielectric breakdown in oxygen-argon sputter-deposited film are measured using metal-oxide-semiconductor capacitors and compared with those in thermal dioxide film. Moreover, their mechanisms are investigated. Thin oxygen-argon sputter-deposited film is found to have the same low electrical conduction and high dielectric breakdown as thermal dioxide film. Electrical conduction through oxygen-argon sputter-deposited film shows small temperature dependence and Fowler–Nordheim characteristics. For a wide range of film thickness, the breakdown field in oxygen-argon sputter-deposited film correlates well with that in thermal dioxide film and with the impact ionization/recombination model. Thus, the electrical conduction mechanism through oxygen-argon sputter-deposited silicon dioxide film is Fowler–Nordheim tunneling, and dielectric breakdown is explained by the impact ionization/recombination model.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3413-3415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs selective epitaxial growth by molecular-beam epitaxy (MBE) was studied as a function of substrate temperature. Selectivity was observed at as low as 600 °C with 1×10−5 Torr As pressure and a 0.04 μm/h growth rate. The heterogeneous nucleation theory gives a good explanation for the selectivity dependence on substrate temperature. Selective epitaxial growth by MBE is promising for device applications which require thin localized epilayers.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 18 (1995), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Glycerinated hollow cylinders of hypocotyl segments excised from the elongation region of cowpea seedlings were heated for 15s in 50% glycerol at 70, 80 or 90°C. Their in vitro yield threshold tension (y) and extensibility (φ) were determined by stress-strain experiments under the perfusion of solutions of pH 4·0 or 6·2. The decrement in y and the increment in φ with acidification were extinguished at 80 and 90°C, respectively. Moreover, such changes in φ and y with acidification were prevented by proteinase treatment for 6 and 10 h, respectively. These results suggest that these two cell wall mechanical properties are controlled, respectively, by two functional proteins activated by acid.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    International journal of immunogenetics 15 (1988), S. 0 
    ISSN: 1744-313X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: We review evidence from this laboratory that T cell recognition of Mlsa determinants is not controlled solely by the α-β T cell receptor (TcR) molecule. We propose a model in which Mlsa recognition reflects a receptor-ligand interaction between two sets of complementary accessory molecules, one molecule (Mlsa) being expressed on B cells and the other (the anti-Mlsa receptor) on T cells; this interaction augments recognition of self class II molecules by the TcR. The biological role of Mls molecules might be to facilitate physiological T-B interaction.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The purpose of this study was to develop a method for calculating the range of the occluding phase in chewing movements. In this study, we defined ‘range’ as the distance of the movement at the lower incisal point while the mandible moves with tooth contact. First, mandibular excursions were measured using an opto-electronic movement analysis system, which can measure mandibular movement with six degrees-of-freedom at a sampling frequency of 100 Hz. With use of this measurement data, the curved mesh diagram of mandibular excursion (CMDME) previously reported was made. Then, chewing movements were measured using the same analysis system. The movements were separated into their component chewing cycles. Finally, we calculated the distance between each cycle and the CMDME. The occluding range of our subject was 0·4 mm at the closing phase and 3·4 mm at the opening phase. These results suggest that tooth contact occurs during chewing movement and demonstrate that the range of the occluding phase for the opening and closing phases of a subject can be calculated without morphological data from a dental cast.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science, Ltd
    Journal of oral rehabilitation 25 (1998), S. 0 
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The purpose of this study was to identify and quantify any component released from seven commercially available light-cured or resin-modified glass ionomer and compomer cements. Twenty-one separate cylindrical stainless steel moulds 6 mm in diameter and 1·0 mm deep were filled with one of seven glass ionomer or compomer cements, light activated and then immediately immersed in separate containers of distilled water. Water samples were retrieved over a time period of up to 30 days and retained for analysis. An occlusal cavity 6 mm in diameter was prepared in extracted human third molar teeth with a remaining dentin thickness of 1·6–2·0 mm. A polypropylene chamber was attached to the cemento-enamel junction of each tooth to contain 1 mL of distilled water. Ten teeth were each filled with one of three cements and light activated. Water samples (eluates) were retrieved over a period of time. All samples were analysed by high performance liquid chromatography. Only one component, hydroxyethyl methacrylate (HEMA), was detected in the eluates from both tooth and mould samples. Analysis of diffusion of the HEMA through dentin showed a relatively sustained movement into the pulp space during the first day, with exponential decline thereafter. Our data show that HEMA was released from all of the light activated glass ionomer cements studied and from the compomer, both directly into water and through dentin. This release may be relevant both to the risk of adverse pulpal responses in patients and to the risk of allergy in patients and dental personnel.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The CMDME (curved mesh diagram of mandibular excursion) method was developed for easy visualization and diagnosis of mandibular movement. This method uses measured mandibular movement to produce a diagram of the range, shape, and inclination of mandibular excursion in three dimensions using any arbitrary landmark of the mandible. First, the mandibular movement of a subject was measured by an opto-electronic movement analysis system capable of measuring mandibular movement with six degrees-of-freedom at a sampling frequency of 100 Hz. For the measurement, the subject was initially instructed to perform four repetitions of mandibular excursion at will, with tooth contact, each lasting 30 s. A total of 12 000 positions of the mandible were thus obtained. Secondly, an attempt was made to match these positions to intersection points (0·1 mm apart) of a CMDME (i.e. mesh) for arbitrary mandibular landmarks with intercuspal position at the origin. The CMDME method can visualize mandibular excursion, and can be used to compare several landmarks, different subjects, or different times. This makes this method an effective diagnostic tool for mandibular movement.
    Type of Medium: Electronic Resource
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