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  • 1
    Electronic Resource
    Electronic Resource
    Vibrational relaxation of the 2ν2 level of NH3 (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2892-2899 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Lead salt diode lasers are used in conjuction with a Q-switched CO2 laser to measure collisional energy transfer from the 2ν2 level of NH3. The (V–T,R) relaxation rate from the 2ν2 level is found to be approximately an order of magnitude faster than the comparable relaxation rate from the ν2 level. (V–V) transfer from the ν2 to the 2ν2 levels plays an insignificant role in the dynamics of energy transfer in the ν2 mode of NH3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455940
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  • 2
    Electronic Resource
    Electronic Resource
    Optimization of pulse energy from 4.3-μm CO2 lasers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4882-4891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the output energy characteristics of the pulsed, optically pumped 4.3-μm CO2 laser is described. The predictions of a rate-equation model representing the laser dynamics are shown to be in good agreement with experiment over a wide range of operating conditions. The factors which control the performance of the laser are identified, and the optimum operating conditions for maximum output energy are discussed. Output energies of 15 mJ/pulse and peak powers of 100 kW/pulse have been obtained from an 88-cm-long by 11-cm2-aperture discharge. Scalability of the pulse energy to several hundred mJ using available pump pulse energies is shown to be feasible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335310
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  • 3
    Electronic Resource
    Electronic Resource
    Control of bleeding in cervical pregnancy: two case reports (1985)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 92 (1985), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1985.tb03039.x
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  • 4
    Electronic Resource
    Electronic Resource
    Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1109-1115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4He++ backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M–Si–N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M–Si–N films during a 700 °C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M–Si–N/Al interface, as seen by transmission electron microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360909
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  • 5
    Electronic Resource
    Electronic Resource
    Reactively sputtered Ti-Si-N films I. Physical properties (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 656-663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of Ti-Si-N were synthesized by reactively sputtering TiSi2, Ti5Si3, or Ti3Si targets in an Ar/N2 gas mixture. They were characterized in terms of their composition by MeV 4He backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and high-resolution transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. All films have a metal–to–silicon ratio close to that of their respective targets. The as-deposited films are either entirely amorphous or contain inclusions of TiN-like nanometer-sized grains when the overall atomic composition of the films approaches the TiN phase in the ternary Ti-Si-N diagram. A correlation between the resistivity of the as-deposited films and their position in the ternary phase diagram is evident, indicating that at the atomic scale, the spatial arrangement of atoms in the amorphous phase and their bonding character can approximate those of the equilibrium phases. A mixture of nanocrystalline TiN and amorphous Si-N is proposed for some titanium- and nitrogen-rich films. The atomic density of some films exceeds 1023 at./cm3. The resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 h decreases the resistivity of the Ti-rich films deposited from the Ti5Si3 or the Ti3Si target, but increases that of the Si-rich films deposited from the TiSi2 target when the nitrogen content exceeds about 30 at. %. The effectiveness of these films as diffusion barriers between Si and Al or Cu is reported in Part II. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364133
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  • 6
    Electronic Resource
    Electronic Resource
    Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 664-671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti-Si-N films synthesized by reactively sputtering a TiSi2, a Ti5Si3, or a Ti3Si target in Ar/N2 gas mixture were tested as diffusion barriers between planar (100) Si substrates and shallow n+p Si diodes, and Al or Cu overlayers. The stability of the Ti-Si-N barriers generally improves with increasing nitrogen concentration in the films, with the drawback of an increase in the film's resistivity. Ti34Si23N43 sputtered from the Ti5Si3 target is the most effective diffusion barrier among all the Ti-Si-N films studied. It works as an excellent barrier between Si and Cu. A film about 100 nm thick, with a resistivity of around 700 μΩ cm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C for 30 min vacuum annealing. When it is used between Al and Si, the highest temperature of stability achievable with a 100-nm-thick film is 550 °C. A thermal treatment at 600 °C causes a severe intermixing of the layers. The microstructure, atomic density, and electrical resistivity of these films are described in an accompanying Part I. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364206
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  • 7
    Electronic Resource
    Electronic Resource
    Aquatic-Terrestrial Partitioning of Deep Groundwater Discharge Using Measured Helium Fluxes (1995)
    s.l. : American Chemical Society
    Environmental science & technology 29 (1995), S. 1713-1721 
    Details
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/es00007a001
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  • 8
    Electronic Resource
    Electronic Resource
    Fast optical switching and optical bistability in a PbSnSe étalon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1215-1217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of optical bistability with nanosecond optical switching in the lead chalcogenide semiconductor Pb1−xSnxSe. The observed refractive optical nonlinearities were generated by the absorption of radiation from a pulsed CO2 laser at incident intensities of 80 kW cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98734
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of the dynamic Stark effect on the small-signal gain of optically pumped 4.3-μm CO2 lasers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1141-1145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results are presented which show that the dynamic Stark effect significantly reduces the small-signal gain (in discharge-excited CO2) and absorption (in unexcited CO2) at the line center of 4.3-μm laser lines directly coupled to 10.4-μm sequence-band pump transitions. In unexcited CO2, population transfer by the pump radiation is negligible and the influence of coherent effects can be observed unambiguously. The results of comparing experiment and theory in this simple case are used to modify a rate-equation model of the 4.3-μm gain dynamics, and the modified calculations are shown to be in good agreement with measured 4.3-μm gain coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336128
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  • 10
    Electronic Resource
    Electronic Resource
    Simple cw NH3 laser operating in the 11–13-μm region (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1413-1416 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple and inexpensive method is described for extending the tuning range of a conventional cw CO2 laser into the 11–13-μm region. The technique consists of optically pumping a mixture of NH3 in Ar confined in a capillary waveguide. An output power as high as 1.9 W is attained in the 12-μm region from a pump power of only 8.8 W and a total of 12 laser transitions are observed in 15NH3. The construction of a compact line-tunable laser is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139423
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