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  • 1995-1999  (33)
  • 1980-1984  (35)
  • 1965-1969  (3)
  • 1925-1929  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Mechanisms of photosensitivity in germanosilica films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7497-7505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms underlying the refractive index changes in germanosilica films deposited by hollow cathode plasma enhanced chemical vapor deposition and subjected to UV irradiation are proposed based on observed changes in film thickness, stress, and structure. An increase in refractive index after UV exposure is observed in films deposited under low ion bombardment conditions. This increase in refractive index is accompanied by a reduction in film thickness which is an order of magnitude larger than that expected from the Lorentz–Lorentz relation. This behavior is shown to result from: (i) a significant degree of porosity in the as-deposited material; (ii) oxygen deficiency of the as-deposited material. Upon UV irradiation, the porous structure is compacted, thus accounting for the large decrease in thickness, while the oxygen deficiency is reduced causing a decrease in the material polarizability and counteracting the effect of the thickness reduction. On the other hand, germanosilica deposited under high ion-bombardment conditions is of normal optical quality and exhibits a decrease in refractive index after exposure to UV. This refractive index reduction is shown to be the result of three processes: structural dilation and stress relief on one side; and an increase in material polarizability on the other, with structural dilation having the largest effect. Annealing of the exposed samples has shown that most of the polarizability increase is likely to be annealed out at 500 °C, while the refractive index change caused by structural dilation is stable up to 800 °C. Finally, it is shown that during plasma enhanced chemical vapor deposition, germanosilica is more prone to nucleation and columnar growth than pure silica and therefore a higher level of ion bombardment is required in the former case in order to obtain a high quality homogeneous material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365291
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical study of spectroscopical properties of Na and Na2 in argon clusters and matrices (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 4148-4158 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a calculation of the structure and the optical transitions of sodium atoms and dimers embedded in argon clusters and matrices. We studied several different systems: A single sodium atom in a dodecahedral argon cluster, a Na atom in a substitutional site of a fcc (face-centered-cubic) Ar lattice containing 63 atoms and a sodium dimer in a 9-atom vacancy of the same fcc lattice (Na2@Ar54). For optimizing the system geometry in its ground state, we use a simplified tight-binding scheme of a metal cluster dressed by the metal-matrix and matrix-matrix van der Waals interactions. A procedure closer to ab initio methodology is then applied using e-Na+ and e-Ar semi-local pseudopotentials and core-polarization operators to determine the electronic structure of the metal valence electrons in the environment of the rare-gas atoms. The electronic transitions and oscillator strengths are obtained by a full two-electron configuration interaction (CI) treatment in the case of Na2@Ar54. The A1Σu+→X1Σg+ transition is redshifted in comparison to the free Na2 dimer. This phenomenon does not appear in the case of a matrix-isolated atom, where all lines are blueshifted. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475813
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  • 3
    Electronic Resource
    Electronic Resource
    Electrochemical reduction and demetalation of silver and thallium porphyrins (1981)
    s.l. : American Chemical Society
    Inorganic chemistry 20 (1981), S. 769-772 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50217a026
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  • 4
    Electronic Resource
    Electronic Resource
    Exact mass measurement by Fourier transform mass spectrometry (1980)
    s.l. : American Chemical Society
    Analytical chemistry 52 (1980), S. 463-468 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50053a021
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  • 5
    Electronic Resource
    Electronic Resource
    Convolution-based phase correction in Fourier transform mass spectrometry (1980)
    s.l. : American Chemical Society
    Analytical chemistry 52 (1980), S. 1090-1094 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50057a022
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  • 6
    Electronic Resource
    Electronic Resource
    Recrystallization kinetics of electroplated Cu in damascene trenches at room temperature (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5547-5553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu metallization for sub-0.25 μm interconnects marks not only a change in metallurgy from Al and a change in architecture from subtractive to damascene but also a major shift in deposition technology from sputtering to electroplating. A remarkable feature of electroplated Cu films is the recrystallization or grain growth process that takes place at room temperature over a period of hours to weeks after plating. While this phenomenon has been described for blanket films, the influence of substrate topography on the kinetics of recrystallization has not previously been reported. Using focused ion beam imaging we demonstrate that recrystallization of the small grained as-plated Cu is initiated at the upper corners of damascene trenches and grains continue to grow laterally, eventually transforming the entire film. Removal of overlying Cu by chemical mechanical polishing before the transformation leads to incomplete recrystallization of the Cu left in the trenches. The kinetics of the recrystallization process for trench widths of 0.3, 0.5, 0.8, 2, and 5 μm reveal a minimum time for recrystallization for the 0.8 μm trenches. An acceleration of the room temperature recrystallization rates for all trench widths is observed if the films are first cycled to −78 °C immediately after plating, and a more pronounced minimum time for recrystallization is observed for the 0.8 μm trenches. These observations lead us to propose that the initiation of this process at the upper corners of the trenches and the trench width dependence of the recrystallization rate are related to higher stress or dislocation densities. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368856
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  • 7
    Electronic Resource
    Electronic Resource
    Electrocyclic ring opening of 1-phenylcyclobutene and 3-phenylcyclobutene radical cations (1983)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 105 (1983), S. 5724-5729 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00356a003
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray diffraction pole figure evidence for (111) sidewall texture of electroplated Cu in submicron damascene trenches (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 682-684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic texture of electroplated Cu in damascene trenches has been examined by x-ray diffraction pole figure analysis. The influence of two post-plating treatments on the resulting orientation of (111) planes of the Cu inside the trenches are compared. When the as-deposited small-grained Cu is allowed to recrystallize at room temperature before chemical mechanical polishing of the overlying Cu, we observe only a (111) fiber texture of the Cu inside the trenches. In contrast, when the overlying material is polished away before recrystallization of the small-grained Cu, pole figures show evidence of sidewall texture of the (111) planes in addition to the (111) fiber texture in the as-deposited as well as the annealed state. The presence or absence of a sidewall texture component in the pole figures offers insight into the evolution of the microstructure of damascene Cu. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122986
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure of sputtered TiN on Al (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 219-221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use electron microscopy and x-ray diffraction to study the microstructure of TiN deposited on Al. In contrast to previous work, we show that the TiN has a large ((approximate)1 μm) grain size arising from its epitaxial orientation on the underlying Al. Within a single grain, the TiN has a heavily voided columnar structure that closely mimics the appearance of fine grains. The within-grain columnar structure arises from the usual shadowing mechanism for sputtered films, and has a weak dependence on the deposition temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119525
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of reactive ion etching–generated sidewall roughness on propagation loss of buried-channel silica waveguides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2178-2180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different mask materials (photoresist and amorphous silicon) and different sample temperatures can influence the roughness of sidewalls produced during reactive ion etching of silica. Buried-channel waveguides with different microroughness on the core sidewalls (corrugation periods less than 1 μm) have been fabricated and characterized for their propagation loss at 1.3 μm wavelength. An increase in the sidewall roughness amplitude of around 0.05 μm results in an increase in the propagation loss of 0.2 dB/cm. Sidewall roughness with a larger period appears to have smaller effect on loss. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117157
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