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  • 1995-1999  (5)
  • 1980-1984  (5)
  • 1965-1969  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Enhancing Effect of Insulin on the Tuberculin Reaction in the Albino Rat (1967)
    [s.l.] : Nature Publishing Group
    Nature 215 (1967), S. 748-749 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Purified protein derivative (Parke Davis and Co. second strength tablets, 0.05 ml./tablet) was used at a concentration of 0.1 mg/ml. The buffer used in the injections was supplied with the tablets. Gelatin' (Difco) was used at a concentration of 180 mg/ml. of buffer. Regular insulin (Iletin', ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/215748a0
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Porous anodic film formation on aluminium (1981)
    [s.l.] : Nature Publishing Group
    Nature 290 (1981), S. 230-232 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Direct transmission electron microscopy of ion-beam thinned steady-state porous anodic films, formed originally in phosphoric or oxalic acid, has shown the presence of cell boundary bands separated from the electrolyte in the pores by differently textured film material6 (Fig. 1). Microanalysis of ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/290230a0
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of flaws in anodic films on aluminium (1980)
    [s.l.] : Nature Publishing Group
    Nature 286 (1980), S. 471-472 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Flaws or lighter regions -73-200 nm in size, can be observed readily in the barrier films formed to various voltages at constant current density on as-received superpure aluminium (99.99 Al; 0.003 Cu; 0.002 Fe; 0.002 Si wt%) (Fig. 1). Stripped anodic films show that the pre-existing flaws are now ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/286471a0
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Thermogravimetric–differential thermal analysis of the solid-state decomposition of ammonium tetrathiomolybdate during heating in argon (1998)
    Springer
    Journal of materials science 33 (1998), S. 3079-3083 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The formation of MoS2 by thermal decomposition of ammonium tetrathiomolybdate (ATT) solids under an argon atmosphere has been studied by simultaneous thermogravimetric and differential thermal analysis. The sequential products for the decomposition upon heating to 700 °C is ATT (hydrated)→(NH4)2MoS4→(NH4)HMoS4→H2MoS4→MoS3→ Mo2S5→MoS2. MoS2 forms between 230 and 260 °C and remains stable up to about 360 °C when it tends to be oxidized by residual oxygen, if present in the atmosphere. These findings suggest that the synthesis of MoS2 from (NH4)2MoS4 via formation of MoS3 is not a direct process, as previously reported, but rather a complex process involving a number of intermediate products (NH4)HMoS4, H2MoS4 and Mo2S5 which have not been reported before. That these products are only specific to the very narrow temperature regimes as revealed suggests that they are very unstable and short lived, that their presence is transient in nature and thus that ex-situ characterization of them is normally difficult. The presence of these intermediate products, as justified experimentally, is further interpreted in terms of their mutual structural similarities which improve understanding as to why MoS2 can usually be prepared from ATT by thermal decomposition, as in this case, or by other techniques, such as anodizing. Laminar morphology of MoS2 is revealed by transmission electron microscopy and its crystal structure examined by selected-area diffraction. Further ex-situ examination by X-ray photoelectron spectroscopy of this end product supports the feasibility of preparing MoS2 from aqueous solutions by anodizing. © 1998 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004335604327
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  • 5
    Electronic Resource
    Electronic Resource
    Synthesis of molybdenum disulphide by acidification of ammonium tetrathiomolybdate solutions (1996)
    Springer
    Journal of materials science 15 (1996), S. 494-496 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00275411
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  • 6
    Electronic Resource
    Electronic Resource
    Anodic film formation on high strength aluminium alloy FVS0812 (1997)
    Springer
    Journal of materials science 32 (1997), S. 4909-4916 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Barrier-type film growth on the high strength aluminium alloy FVS0812 has been studied by a combination of transmission electron microscopy and Rutherford backscattering spectroscopy. The film is composed mainly of amorphous anodic alumina, but is contaminated with iron species incorporated into the film from the alloy. The film may also be contaminated with silicon and vanadium species at levels below the detection limit of the present experiments. The contaminant species are primarily incorporated locally into the film during oxidation of Al13(Fe, V)3Si dispersoids and the resulting film material is of reduced resistivity compared with anodic alumina of high purity. As a consequence of the presence of regions of film material of differing resistivities, the film is of irregular thickness. The average thickness corresponds to a nm/V ratio of about 1.3. Iron species incorporated into the film migrate outwards at roughly 2.1 times the rate of Al3+ ions. The iron species are not ejected in significant amounts to the electrolyte on reaching the film/electrolyte interface and hence, a thin layer of film material highly enriched in iron species develops at the film surface. The layer may also be enriched in vanadium species, if these are incorporated into the film and migrate more rapidly than Al3+ ions. Enrichment of iron, and possibly other alloying element atoms, is found in a thin layer of alloy immediately beneath the anodic film, paralleling enrichments of alloying element atoms found following anodic oxidation of other aluminium alloys. The enrichments at both the alloy/film and film/electrolyte interfaces do not appear to be continuous across the macroscopic surface of the specimens, probably due to the non-uniformity of film growth on the two-phase substrate. The maximum voltage for the selected conditions of anodizing was limited to 68 V as a result of oxygen generation at flaws which are present extensively in the anodic film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018620123001
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of porous anodic films on FVS0812 aluminium alloy (1998)
    Springer
    Journal of materials science 33 (1998), S. 4159-4165 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The formation of porous anodic films on FVS0812 aluminium alloy has been examined by transmission electron microscopy in order to elucidate the processes of film growth. A complex morphology of film material is revealed containing relatively tortuous, branched and terminated porosity and relatively large cavities. The morphology is associated with the differing anodic oxidation behaviour of the aluminium matrix and silicide dispersion regions of the alloy and the differing chemical stabilities of the resultant film regions. The anodic oxidation of the silicide proceeds more slowly than that of the aluminium matrix, with the production of film material of much finer morphology. The reduced rate of oxidation of the silicide is attributed to the effects of alloying element species in the anodic film material and pore solution. The rate of oxidation of the silicide is sufficient for most of the particles to be oxidized completely during anodizing. However, the resultant film material subsequently dissolves in the pore solution leaving relatively large cavities in the film. The differing oxidation rates of the alloy components, coupled with locally differing film properties, leads to a relatively rough alloy/film interface.© 1998 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004413521804
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  • 8
    Electronic Resource
    Electronic Resource
    Barrier-type anodic films on aluminium in aqueous borate solutions: 2 - Film compositions by Rutherford backscattering spectroscopy and nuclear reaction methods (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 252-263 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Compositions and elemental distributions of anodic films formed on aluminium in aqueous borate electrolytes have been investigated by Rutherford backscattering spectroscopy (RBS) and associated nuclear reaction methods, together with controlled crystallization of film sections in the transmission electron microscope (TEM). Films were found to consist principally of Al2O3; the outer regions of the films were contaminated with boron and, for all cases studied, the inner regions were boron-free. In the absence of film dissolution the contaminated region represented approximately 40% of the film thickness, and this proportion did not vary significantly with changes in current density of film formation. The outer region contained about 1.5 wt% boron, probably as B2O3, and the densities of the inner and outer regions were similar to an accuracy of about 10%.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050606
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  • 9
    Electronic Resource
    Electronic Resource
    Oxidation of copper and mobility of copper ions during anodizing of an Al - 1.5 wt.% Cu alloy (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 892-898 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The mechanism of oxidation of copper at the alloy/film interface, and the subsequent migration of copper ions in barrier-type films, has been examined for anodizing of an Al - 1.5 wt.% Cu alloy with a prior chemical polishing treatment. Both chemical polishing and anodizing result in formation of a thin layer of alloy at the alloy/film interface, of ∼2 nm thick, that is highly enriched in copper. The layer is present immediately beneath the different types of film formed by chemical polishing and subsequent anodizing, and contains in both cases ∼6 × 1019 Cu atoms m-2. The amount of copper contained within the enriched layer of alloy is not significantly dependent upon the anodizing voltage. During anodic film growth, both aluminium and copper ions are incorporated into the film at the alloy/film interface, on average in their alloy proportions. However, the film is depleted in copper relative to the alloy because copper ions in the film migrate faster than Al3+ ions and, on reaching the film/electrolyte interface, are ejected directly to solution. The mechanism of oxidation of copper is proposed to depend upon the formation, through prior oxidation of aluminium, of copper-rich clusters in the enriched layer of alloy at the alloy/film interface. Individual clusters are oxidized only on achieving a critical size. Consequently, copper is incorporated into the film discontinuously both in time and in position along the alloy/film interface. The films contain a high population density of flaws, which affects the film composition, the uniformity of ionic current, the faradaic efficiency of film growth, and the detailed distributions of copper ions within the films. However, the general features of film growth are compatible with the usual growth mechanism of anodic alumina, with transport numbers of Al3+ and O2-/OH- ions of ∼0.4 and ∼0.6, respectively.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740231307
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation of self-supporting anodic barrier films on aluminium for backscattering analysis (1982)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 4 (1982), S. 208-211 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A technique for the preparation of self-supporting windows of anodic barrier films on aluminium, which are essential for the precise interpretation of Rutherford backscattering data, is described. The generation of the window comprises several steps which include: (1) electropolishing of the superpure aluminium specimen in a perchloric acid/ethanol mixture; (2) masking a region of surface of the electropolished specimen with ‘Lacomit’ paint; (3) anodizing to develop a barrier-type anodic film over the exposed aluminium surface; (4) removal of the paint to reveal the non-anodized region on one face of the aluminium specimen which is then removed by electropolishing to leave the film window. Following this procedure, self-supporting windows of anodic films, free from the aluminium substrate, having effective diameters up to about 10 mm, are produced. It is shown that the use of the self-supporting window enables the Rutherford backscattering technique to be used to its full potential for the analysis of the barrier-type anodic films, enabling Al and O profiles through the film to be resolved clearly.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740040507
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