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  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A reflection-type four-mirror polarizer has been constructed and used in magnetocircular dichroism and Kerr rotation studies in the vacuum ultraviolet region. Geometrical properties and polarization characteristics were measured. The polarizer is sufficient to convert linearly polarized synchrotron radiation into circularly polarized light. Magneto-optical measurements were performed using magnetization modulation technique, and measured magnetocircular dichroism and Kerr rotation spectra in yttrium iron garnet were shown to satisfy the Kramers–Kronig relation. It is concluded that the reflection-type four-mirror polarizer together with the synchrotron radiation can be used in magneto-optical studies with high precision. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4021-4022 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple, low-cost lock-in amplifier was described. This system has an autotracking bandpass filter which synchronizes its center frequency automatically with the reference frequency © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1766-1770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A structural model of a-Si and a model for its transient phases have been proposed. In these models, it is assumed that a-Si is composed of many small regions (or clusters with a radius of about 50 A(ring)) having different free energies. When a-Si is rapidly heated to a temperature slightly less than 1450 K so as to avoid crystallization, it transforms to a new phase in which both a-Si clusters and super-cooled l-Si coexist. By using these models, anomalous phenomena observed in explosive crystallization and enhanced diffusion phenomena in rapid thermal annealing (RTA) process can be explained. Furthermore, the viscosity of super-cooled Si fluid at 1000 °C induced by the RTA process is estimated to be 107–108 mPa s, which leads to the determination of T0 value of about 1300 K in Vogel–Fulcher–Tammann (VFT) relation. However, this T0 value differs from that previously reported. This discrepancy has been discussed and it is concluded that T0 in the VFT relation is not a constant but a function of (dT/dt). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5648-5648 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-frequency recording is essential for a recording channel with both a high data rate and a high linear recording density, and this study examined the ways in which performances are affected by the switching time of the write current, ts, and the disk velocity, v. The switching time, defined as (tr+tf)/2, where tr and tf are the rise time and the fall time of the write current, was changed from 5 to 20 ns, while v was changed from 12 to 26 m/s. Co-based thin-film media with a coercivity of about 2.5 kOe and a remanence-thickness product of about 100 G μm were used for recording the data. The flying height of the head was maintained at 50 nm regardless of disk velocity. This study confirmed that the overwrite characteristics are strongly related to the product of ts and v. Overwrite here was defined as the ratio of the residual fundamental frequency component amplitude of a 21 kFCI signal to the original one after overwriting with a 86 kFCI signal. Suitable overwrite characteristics were obtained when t*sv was smaller than πa, where a is the transition parameter derived from the equation proposed by Williams and Comstock. The transition length on the medium was determined primarily by πa when t*sv was smaller than πa, but was determined by t*sv when t*sv was larger than πa. Linear density characteristics and noise characteristics and their relationship to the medium properties will also be addressed in this talk. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8498-8502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high temperature rapid thermal annealing (HT-RTA) using a flat gas flame on the electrical properties of phosphorus-doped polycrystalline silicon (poly-Si) films in association with their microscopic structure were studied. Samples with a phosphorus concentration of 3.1×1017–6.0×1020 cm−3 were prepared and annealed by HT-RTA ranging from 1150 to 1350 °C. During HT-RTA, the sample surface was laterally swept by gas flames. The resistivity of the samples decreased with increasing annealing temperature, and the lowest resistivity was 4.8×10−4 Ω cm for the sample doped with P of 6.0×1020 cm−3 when annealed at 1350 °C. Hall mobility, on the other hand, increased first and then decreased with increasing P concentration. The highest Hall mobility was 71.3 cm2/V s for the sample annealed at 1350 °C of which the P concentration was 3.5×1019 cm−3. The results suggest that the grain boundary potential barriers for carriers decreased with increasing doping concentration and annealing temperature, and that the total area of grain boundaries in the films decreased with increasing annealing temperature because of secondary grain growth and the shrinkage of boundary width. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1459-1464 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of gas flame annealing on the structure of polycrystalline Si films was studied using transmission electron microscopy and electron spin resonance. This annealing technique involved heating the sample surface to more than 1100 °C using flat gas flames with a scan rate of 1 mm/s and a heating rate of about 260 °C/min. Electron microscopy images revealed that the secondary grain growth proceeded with increasing the number of annealing times (annealing frequency) and that the grain size for samples annealed at 1360 °C was more than 1 μm whereas secondary grain growth was not significant for samples annealed at 1150 °C. Further, it was found that the spin density in the samples annealed at 1360 °C decreased from 1.5×1018 cm−3 to 3.8×1017 cm−3. It was concluded from the spin resonance results and the electron microscopy images that the secondary grain growth consists of two processes, the initial structural rearrangement of the grain boundaries and the subsequent grain growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1155-1157 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel microstructure is formed on the single crystal surfaces of the oxide superconductor Ba0.6K0.4BiO3 (BKBO). Micron-sized barium islands periodically grew on the mother crystal during electrocrystallization of BKBO. Experimental analysis suggested the relation of this unusual microstructure to the Liesegang rings well-known for a crystal growth in gels. The present discovery provides a potential technology for fabricating microstructures on substrates of solids. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 32 (1979), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract— Developmental changes of myelin proteins in chick sciatic nerve were studied at the stage of myelination by sodium dodecylsulfate (SDS)-polyacrylamide gel electrophoresis. The myelin of adult hen peripheral nervous system (PNS) contained two glycoproteins (BR-P0 and PASII), both of which are unique to PNS myelin, in addition to the basic encephalitogenic protein, BP, which is common to CNS and PNS myelin. The other basic protein (BF-P2) found in the PNS of other species was not definitely detectable in hen PNS. At the early stages of myelination (from 14 to 18 embryonic days) the amounts of myelin proteins increased rapidly in parallel with the increase in number of layers of the myelin sheath of the PNS. At 14 embryonic days high molecular weight proteins were dominant, while myelin specific proteins were barely detectable in the PNS myelin fraction. At 18 embryonic days, however, BR-PO, BP and PASII proteins became the main protein components of the PNS myelin, whereas high molecular weight proteins decreased in quantitative importance during development. At the early stage of myelination other glycoproteins were also detectable in the PNS myelin. Radioactive fucose was actively incorporated into the two glycoproteins, BR-P0 and PASII, at the early stage of myelination in vivo. These results suggested that myelin proteins especially glycoproteins, may play an important role in PNS myelin formation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 515-517 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new VAX-based data acquisition and analysis system for JFT-2M has been developed to handle various types of data flexibly. It consists of two main VAX4200 computers sharing data disks (2GB*2) with DSSI cluster and distributed VAXstations. One VAX computer acquires and stores CAMAC data. The other is used mainly for analyzing earlier data on data disks or a magneto-optical disk autochanger (0.6GB*56), where old data acquired by a previous system are also stored and utilized. Data acquisition software originally developed at NIFS was modified and localized for this system. It is characterized by centralized data management and network-wide expandability from a small VAXstation to cluster-wide VAXes. Presently, 3 MB of data for every shot are acquired, stored, and analyzed to obtain fast plasma and shape monitor outputs within 3 min. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 451-453 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose anti-phase direct bonding and report on the first demonstration of its application to device fabrication. Cross-sectional observation by high-resolution transmission electron microscope showed that InP and GaAs wafers bonded at the atomic level and the misfit dislocations were localized at the bonding interface. Then InP-based 1.55 μm wavelength lasers were fabricated on GaAs. The performance of the lasers was approximately equal to that of the lasers formed by in-phase direct bonding. Moreover, stable operation was possible for more than 1000 h at 50 °C. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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