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  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of Ag/Al bilayer self-encapsulation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5407-5412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-encapsulation kinetics of Ag/Al bilayers were studied both experimentally and theoretically as part of the effort to introduce Ag as an alternative metallization scheme for future ultra-large-scale-integrated technologies. Theoretical modeling was based on an analytical solution of a modified diffusion equation, which incorporated the diffusion of Al atoms through the Ag layers during the Ag/Al bilayer encapsulation progress. The amount of segregated Al atoms was monitored by both Rutherford backscattering spectrometry and film resistivity measurements, and correlated well with the theoretical predictions. These findings showed that the kinetics of the self-encapsulation could be significantly affected by both (i) the chemical affinity between Al and Ag atoms, and (ii) the interfacial energy between the metal layer (Ag) and the newly formed AlxOyNz diffusion barriers. Higher anneal temperatures were shown to accelerate the encapsulation process, and hence, achieved a lower resistivity in the underneath Ag layer. This model, in addition, confirmed the self-passivating characteristics of AlxOyNz diffusion barriers formed by Ag/Al bilayers annealed between 500 and 725 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371538
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  • 2
    Electronic Resource
    Electronic Resource
    QUELQUES REMARQUES SUR ĽUTILISATION DES CALCULATEURS ELECTRONIQUES EN COMPTABILITE NATIONALE (1966)
    Oxford, UK : Blackwell Publishing Ltd
    Review of income and wealth 12 (1966), S. 0 
    Details
    ISSN: 1475-4991
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: Cet article examine comment les calculateurs modernes servent ou pourraient servir en comptabilité nationale, soit pour ľutilisation des comptes, soit pour leur préparation.Du premier point de vue ľauteur insiste ďabord sur la complexité croissante des comptes nationaux qui rend difficile leur usage à partir de la forme classique de tableaux imprimés et tend à rendre nécessaire leur transcription sous forme de cartes perforées, cequi permettra de faire à la machine un certain nombre de travaux élémentaires sur les comptes.On peut également penser que les calculateurs permettraient des sondages rapides sur certains éléments des comptes en cours de préparation.Enfin, les utilisations des calculateurs électroniques pour ľanalyse des comptes, ľétude des modèles de projection et leur résolution sont bien connues.En ce qui concerne ľutilisation des calculateurs pour la préparation des comptes ľauteur montre que, étant donné le caractère imparfait du système statistique dans de nombreux pays, les comptes économiques des années passées sont en partie préparés àľaide de véritables modèles qui permettent de passer des données de base aux comptes et qui peuvent dans certains cas être résolus àľaide de calculateurs électroniques.Là oùľinformation statistique est meilleure, des éléments des comptes peuvent être calculés directement par agrégation des données élémentaires. On peut donc penser qu'une époque viendra où la plus grande partie des comptes nationaux sera préparée àľaide de machines électroniques à partir des données de base.On peut alors imaginer un monde où les transactions élémentaires seraient enregistrées au moment où elles seraient réalisées, rendant ainsi entièrement automatique la préparation des comptes nationaux. Mais alors les machines pourraient réunir les modèles de préparation et les modèles ďutilisation des comptes. Ľétape intermédiaire que constitue la préparation et la publication des comptes sous la forme actuelle deviendrait alors inutile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-4991.1966.tb00712.x
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360806
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial reactions in the SiO2/Ru and SiO2/Ru/Al-Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5751-5762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reactions in the structures of Si/SiO2 (500 nm)/Ru (65 nm) (up to 950 °C) and Si/SiO2 (500 nm)/Ru (72 nm)/Al-0.8 wt % Si (630 nm) (up to 700 °C), were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, x-ray diffractometry, selected-area electron diffraction, energy-dispersive x-ray spectroscopy, scanning electron microscopy, and transmission electron microscopy. A thin film of Ru was stable on a SiO2 substrate up to 30 min in a vacuum anneal at 950 °C. In vacuum, a fast interfacial reaction between the Ru thin film and the Al-Si overlayer started between 550 and 575 °C, resulting in the formation of a Si/SiO2/ RuAl2/(Ru4Al13)Al-Si layer sequence. Similar to the reactions between Pt group metals and Al, the Ru/Al reaction is nonuniform. It is controlled by a nucleation mechanism and is accompanied by void formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359220
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  • 5
    Electronic Resource
    Electronic Resource
    Wet oxidation of amorphous and crystalline Si1−x−yGexCy alloys grown on (100)Si substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of amorphous Si0.65Ge0.27C0.08 and single-crystal Si0.63Ge0.36C0.01 in wet ambient at 700 and 900 °C has been studied using Rutherford backscattering spectrometry and transmission electron microscopy. A reference sample of Si0.63Ge0.37 was also oxidized in order to determine the influence of carbon on the oxidation behavior. The low C content alloy behaved similar to the SiGe alloy: uniform Si1-xGexO2 was obtained at 700 °C whereas SiO2 was formed at 900 °C, and Ge piled up underneath the oxide. In both cases, carbon was not detected in the oxide layer. The amorphous Si0.65Ge0.27C0.08 alloy behaved significantly different at both oxidation temperatures in comparison with the crystalline Si0.63Ge0.36C0.01 and Si0.65Ge0.37. Negligible oxidation occurred at 700 °C whereas SiO2 was obtained at 900 °C and the rejected Ge distributed uniformly throughout the SiGeC alloy. It is proposed that fast Ge diffusion during oxidation at 900 °C resulted from diffusion at grain boundaries, since crystallization of the amorphous SiGeC layer occurred in conjunction with oxidation, leading to nucleation of nanocrystals (∼5 nm diam). The oxidation/annealing treatment has thus provided a useful mechanism for increasing the relative Ge concentration in the SiGeC alloy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113180
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  • 6
    Electronic Resource
    Electronic Resource
    Thickness profiles of SiO2 films deposited from tetraethoxysilane/O3 precursors in ultra-high-aspect-ratio capillaries (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3286-3288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thickness profiles of silicon dioxide films deposited by ozone-augmented tetraethoxysilane have been experimentally measured in ultra-high-aspect ratio capillaries. The deposition profiles exhibit a sharp drop in film thickness near the capillary entrance followed by a gradual decrease in thickness along the capillary. A feature-scale model for this process has been developed which includes the effect of by-products on the reaction kinetics and transport inside the structure. Simulated deposition profiles agree well with the experimental data, indicating that a trapped by-product inside the capillary inhibits the film-forming reaction, thus producing the characteristic film profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115222
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  • 7
    Electronic Resource
    Electronic Resource
    Crystalline-to-amorphous transition in chemical vapor deposition of pseudomorphic Si1−x−yGexCy films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1634-1636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic SiGeC films have been grown on (100) Si by atmospheric pressure chemical vapor deposition at 600 and 700 °C using SiH2Cl2, GeH4, and C2H4 precursors. Films with C concentrations of up to 2.5 at. % were entirely pseudomorphic and a 120-nm-thick Si66.5Ge31C2.5 film had 90% substitutional carbon. With increasing C incorporation due to increased ethylene flow, a layered structure was formed consisting of an amorphous film overlaying a buried pseudomorphic film. The crystalline-to-amorphous transition was initiated by the accumulation of C on the epitaxial growth surface. This deteriorated surface resulted in the formation of stacking faults along {111} planes and subsequent amorphization. Defect formation and amorphization could be prevented by periodically growing a thin Si epilayer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120001
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  • 8
    Electronic Resource
    Electronic Resource
    Band gap of Ge rich Si1−x−yGexCy alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2557-2559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy films ( x≈0.90, y≤0.02) were grown by molecular beam epitaxy on Si substrates. Infrared optical absorption was used to obtain the band gap energy at room temperature. Biaxial strain obtained from x-ray diffraction measurements verified the presence of nearly relaxed films, and the total and substitutional C contents were obtained from channeling C-resonance backscattering spectrometry. We show by direct measurements that interstitial C had a negligible impact on the band gap, but substitutional C was found to increase the band gap with respect to equivalently strained Si1−xGex alloys. While strain decreases the band gap, the effect of substitutional C on the band gap depends on the Si and Ge fractions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117738
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  • 9
    Electronic Resource
    Electronic Resource
    The effect of carbon on strain relaxation and phase formation in the Ti/Si1−x−yGexCy/Si contact system (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first study of interfacial reactions of a metal with Si1−x−yGexCy epitaxially grown on Si. The Ti/Si1−x−yGexCy/Si (0〈y〈1.7%) contact system was studied after isochronal heat treatments from 500 to 800 °C. The results for Ti/Si1−xGex phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide–germanide phases, and carbon accumulation (probably in the form of TiC) at the silicide–germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide–germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118120
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  • 10
    Electronic Resource
    Electronic Resource
    High-Precision Measurement of Temperature Factors for NiAl by Convergent-Beam Electron Diffraction (1998)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 54 (1998), S. 147-157 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Convergent-beam electron diffraction is applied to measure the temperature factors of the intermetallic phase NiAl with high accuracy. The patterns are recorded in an energy-filtering transmission electron microscope at zero energy loss using a slow-scan CCD camera. The specimens were tilted in systematic row orientation. In this new approach, data are extracted from the bright-field disc as well as from several high-order dark-field discs along line scans. The temperature factors are determined by fitting Bloch-wave simulations to the intensity profiles. The harmonic approximation for temperature factors is used. For B2-phase NiAl, mean thermal displacements u(Ni) = 5.5 ± 0.1 and u(Al) = 5.7 ± 0.1 pm are obtained at 100 K. A very detailed error analysis is given, and stochastic and systematic errors are discussed and quantified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767397010969
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