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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1305-1309 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a two-step two-dimensional (2D) diffusion study by scanning capacitance microscopy (SCM) and 2D SUPREM IV process simulation. A quantitative 2D dopant profile of a gate-like structure is measured with the SCM on a cross-sectioned polished silicon wafer. The gate-like structures consist of heavily implanted n+ regions separated by a lighter doped n-type region underneath 0.56 μm gates. The SCM is operated in the constant-change-in-capacitance mode. The 2D SCM data are converted to dopant density through a physical model of the SCM/silicon interaction. This profile has been directly compared with 2D SUPREM IV process simulation and used to calibrate the simulation parameters. The sample is then further subjected to an additional diffusion in a furnace for 80 min at 1000 °C. The SCM measurement is repeated on the diffused sample. This final 2D dopant profile is compared with a SUPREM IV process simulation tuned to fit the earlier profile with no change in the parameters except the temperature and time for the additional diffusion. Our results indicate that there is still a significant disagreement between the two profiles in the lateral direction. SUPREM IV simulation considerably underestimates the diffusion under the gate region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 117 (1995), S. 10149-10150 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2082-2084 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied extended x-ray absorption fine structure (EXAFS) spectroscopy to study the cation distribution in a series of spin-sprayed NiZn-ferrite films. A least-squares fitting of experimental EXAFS data with theoretical, multiple-scattering, EXAFS data allowed the quantitative determination of site distributions for all transition metal cations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1179-1181 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-field photodetection optical microscopy (NPOM) is a fundamentally new approach to near-field optical microscopy. This scanning probe technique uses a nanometer-scale photodiode detector which absorbs optical power directly as it is scanned in the near field of an illuminated sample surface. We have applied NPOM to measure the visible absorption spectrum of dye molecules embedded in a single 300 nm polystyrene sphere. The near-field absorption spectrum is obtained by measuring the NPOM probe photocurrent while the wavelength of the illumination pump beam is scanned from 450 to 800 nm. Peaks are identified at 567, 608, and 657 nm in the near-field spectrum of the single-dyed polystyrene sphere. These peak positions are in good agreement with far-field absorption measurements performed on many dyed polystyrene spheres. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4081-4083 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like domains are observed with the scanning capacitance microscope. In contrast, a spatially uniform capacitance signal is observed in unintentionally doped single variant ordered GaInP. These microscopic capacitance observations can be qualitatively explained by bend bending or internal electric fields. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 853-855 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report our femtosecond time-resolved measurements on the photoresponse of an epitaxial YBa2Cu3O7−x (YBCO) thin-film photodetector, patterned into a microbridge geometry. By varying the current–voltage biasing conditions between the superconducting and resistive (hot spot) states, we observed transients that correspond to the nonequilibrium kinetic-inductance and the nonequilibrium electron-heating response mechanisms, respectively. The two-temperature model and the Rothwarf–Taylor theory have been used to simulate the measured wave forms and to extract the temporal parameters. The electron thermalization time and the electron–phonon energy relaxation time were determined by the electron temperature rise and decay times, which were found to be 0.56 and 1.1 ps, respectively, in the resistive state. We have also measured the ratio between the phonon and electron specific heats to be 38, which corresponds to a phonon–electron scattering time of 42 ps. No phonon-trapping effect (typical for low-temperature superconductors) was observed in YBCO, in the superconducting state, so the quasiparticle lifetime was given by the quasiparticle recombination time, estimated from the Rothwarf–Taylor equations to be below 1 ps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 344-346 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative dopant profile measurements are performed on a nanometer scale by scanning capacitance microscopy (SCM). An atomic force microscope is used to position a nanometer scale tip at a semiconductor surface, and local capacitance change is measured as a function of sample bias. A new feedback method has been demonstrated in which the magnitude of the ac bias voltage applied to the sample is adjusted to maintain a constant capacitance change as the tip is scanned across the sample surface. A quasi-1D model is used to extract dopant density profiles from the SCM measurements. The inverted SCM dopant profiles are compared with profiles obtained by process simulation and secondary ion mass spectroscopy measurement. Good agreement was found between the SCM measured profile and the lateral profile predicted by SUPREM 4 over the concentration range from 1017 to 1020 cm−3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1264-1266 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2309-2311 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A submicrometer photodiode probe with a sub-50 nanometer tip radius has been developed for optical surface characterization on a nanometer scale. The nanoprobe is built to detect subwavelength optical intensity variations in the near field of an illuminated surface. The probe consists of an Al–Si Schottky diode constructed near the end of a micromachined pyramidal silicon tip. The process for batch fabrication of the nanoprobes is described. Electrical and optical characterization measurements of the nanoprobe are presented. The diode has a submicrometer optically sensitive area with a 150 fW sensitivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1432-1434 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shear force microscopy is very useful for distance regulation in near-field scanning optical microscopy (NSOM). However, the optical method used to detect the shear force can cause problems when imaging photosensitive materials, i.e., the shear force detection beam can optically pump the sample. We present here a new approach to shear force detection based upon capacitance sensing. The design, operation, and performance of the capacitance detection are presented. Shear force topographic images of hard and soft surfaces are shown using tungsten and NSOM fiber tips. The closed loop vertical sensitivity achieved is 0.01 nm/(square root of)Hz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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