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  • 1
    ISSN: 1617-4623
    Keywords: Basic/leucine zipper protein ; HBP-1a(17) gene ; TransgenicArabidopsis ; Gene expression ; β-Glucuronidase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Wheat basic/leucine zipper protein HBP-1a(17) binds in vitro specifically to ACGT motif-containing cis-acting elements, such as the type I element of plant histone promoters and the G-box of hormone- and light-inducible promoters. To address the in vivo function of HBP-1a(17), we isolated and structurally analyzed theHBP-1a(17) gene and examined its expression in transgenicArabidopsis plants. TheHBP-1a(17) gene is composed of 14 exons; the basic region and leucine zipper are encoded by separate small exons, as is the case for other bZIP protein genes. The G-box of theHBP-1a(17) promoter bound specifically to HBP-1a(17) and its related HBP-1a isoforms, suggesting that theHBP-1a(17) gene may be autoregulated, although the binding affinity of these proteins in vitro is very low. InArabidopsis plants, activation of theHBP-1a(17) promoter was highly restricted to photosynthetically active mesophyll, and guard cells and vascular bundles of vegetative leaves. Etiolation of transgenic plants resulted in inhibition of expression of theHBP-1a(17) promoter. Indeed, theHBP-1a(17) promoter contains several sequence elements homologous to cis-acting elements conserved in light-inducible promoters. It is, therefore, assumed that theHBP-1a(17) gene is light regulated and that HBP-1a(17) is involved in light-responsive gene transcription via the G-box.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 3704-3710 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3804-3807 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe the formation of an ordered structure in Si1−xGex films grown on Ge(100) substrates, as well as on Si(100) substrates, by molecular beam epitaxy. The structural characterization of these ordered films is performed. The degree of order in the films is quantitatively measured using x-ray diffraction. The dependence of the degree of order on Ge composition is similar between films on Ge(100) and Si(100) substrates. By careful x-ray diffraction analysis, we find that the degree of order is not equivalent in variants. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5507-5509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic measurements at various temperatures have been performed for loose powder and field-oriented samples of Gd1−xDyxCo4B with x=0, 0.05, and 0.1. The temperature dependences of spontaneous magnetization in these compounds are determined. It is found that a spin reorientation occurs at around T=162 K for Gd0.95Dy0.05Co4B and at around 225 K for Gd0.9Dy0.1Co4B. The temperature dependences of magnetic anisotropy constants, K1(Gd1−xDyxCo4B), of Gd1−xDyxCo4B with x=0 and 0.1 are determined. The anomalous temperature dependence of K1 (GdCo4B) is well explained by taking account of the Gd sublattice magnetic anisotropy due to the dipole–dipole interaction and the Co sublattice magnetic anisotropy similar to that in YCo4B. The temperature dependence of the Dy sublattice magnetic anisotropy constant, K1(Dy), has also been determined by making use of K1(GdCo4B) and K1(Gd0.9Dy0.1Co4B). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 184-186 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We fabricated a scanning Hall-sensor microscope with an active area 50 μm×50 μm that can be served as a simple and conventional tool for nondestructive evaluation of magnetic materials. Using this, we succeeded in magnetic detection of small cracks (∼10 mm long and ∼0.1 mm wide) in mild steels with a yield point of 29 kgf/mm2, caused by a plane-bending fatigue test at a stress amplitude of 28 kgf/mm2 and a frequency of 29.2 Hz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4865-4867 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to investigate the crystalline electric field at R (R=rare earth) site and the induced magnetic moment at Co site in RCo3B2 compounds, high field magnetization process up to 15 T and paramagnetic susceptibility have been measured at various temperatures. It is found by analysis of the experimental data that (1) the crystal field parameter A20 is very large (∼−2000Ka0−2) and (2) significant magnetic moment (0.15–0.93μB) is induced at the Co site, in RCo3B2 compounds. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5141-5143 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spontaneous magnetization and paramagnetic susceptibility have been measured for the Rn+1Co3n+5B2n compounds with R=Y, Gd, and Dy and n=1, 2, and 3 in the temperature range from 4.2 up to 1000 K in fields up to 20 kOe. The data on the Gd system are analyzed based on the molecular field model. The exchange field at the Gd site from the Co sublattice is estimated. The averaged exchange field at T=0 K is estimated to be 101 T for n=1, 75T for n=2, and 56 T for n=3. Paramagnetic susceptibilities are fairly well expressed by the superposition of the Co- and the Gd-sublattice contributions. Other magnetic properties of the Y and the Gd system are also reported. Only magnetic data are given for the Dy system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3242-3249 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A finite-element method is developed for the analysis of eigenstates in the valence band of quantum wires which have arbitrary potential profiles. Our method is basically based on the Galerkin procedure and triangle linear elements are used as finite elements. In our formulation the effect of the band mixing in the valence band is duly taken into account. Boundary conditions at heterointerfaces are also taken into account in the multiband envelope function space. Numerical examples are presented for circular, square, rectangular, and triangular quantum wire structures. The relation is clarified between the degeneracy in the E-ky dispersion curve and the symmetricity of the confinement potential. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3627-3629 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out modeling of the evolution of silicon solar cell performance following irradiation with high energy protons and electrons. Using the traditional semiempirical expression the solar cell output parameters of a given cell structure could be predicted for various particle energies by expressing the particle fluence as a displacement damage dose. We discuss the extent to which the evolution of different silicon solar cell structures in a radiation environment can be predicted using the software package PC-1D by taking account of the degradation of the minority carrier lifetime and majority carrier concentration in the cell. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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