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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the 1.047 eV emission in GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3214-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use photoluminescence to study residual transition metal contaminants in GaN layers, which are grown by the sandwich technique either on 6H-SiC substrate or on sapphire substrate. We observe three no-phonon lines in the near infrared optical region at 1.3 eV, 1.19 eV, and 1.047 eV caused by 3d transition metals. The appearance of GaN related host modes in the phonon sideband of these emissions proves that the luminescence centers are incorporated in the hexagonal GaN layers. In this paper we especially focus on the luminescence band with the no-phonon line at 1.047 eV. Temperature dependent photoluminescence measurements reveal an excited state splitting of 8 meV. In photoluminescence excitation spectroscopy we observe a further excited state at 1.6 eV with a fine structure splitting. The appearance of this excited state in the n-type samples gives evidence that the defect must already exist in its luminescent charge state without illumination. The experimental results on the 1.047 eV emission fit to a 4T2(F)→4A2(F) internal electronic transition of a transition metal with a 3d7 electronic configuration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361266
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  • 2
    Electronic Resource
    Electronic Resource
    Search for new superconductors in the Y-Ni-B-C system (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2291-2295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have searched for superconductivity in a wide variety of stoichiometries in the Y-Ni-B-C system, using Yx(NiB)Cy phase spread alloy thin films and the magnetic field modulated microwave absorption technique. The superconducting critical temperature (Tc) varies with the stoichiometry, showing the highest Tc for a Y/Ni ratio of 1/2, attributed to the YNi2B2C phase. We found no other superconducting phases with a Tc higher than 10 K. Furthermore, a search in YxNiB(C1−zNz)y and YxNiBNy phase spread alloys showed no superconductivity. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364281
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  • 3
    Electronic Resource
    Electronic Resource
    Zeeman spectroscopy of the Fe3+ center in GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optical investigation of the Zeeman behavior of the deep iron acceptor in GaN grown on 6H–SiC. The characteristic ground state splitting of the near-infrared luminescence transition at 1.2988 eV allows for an unambiguous assignment to Fe3+previously proposed on the basis of ODMR results. The observed luminescence lifetime of 8 ms as well as the fine structure of the excited state are consistent with a 4T1(G)–6A1(S) transition. The 4T1(G) state is found to couple only weakly to ε-type phonon modes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114796
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  • 4
    Electronic Resource
    Electronic Resource
    Intensity-dependent energy and line shape variation of donor–acceptor-pair bands in ZnSe:N at different compensation levels (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1914-1916 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that energy position and line shape of donor–acceptor-pair luminescence bands in ZnSe:N/GaAs epilayers depend very sensitively on excitation density and compensation. A continuous development from structureless red-shifted broad to well structured donor–acceptor-pair (DAP) bands is observed for increasing excitation density. The red shift is explained by the fluctuating potential affecting the bands and impurity levels and is caused by random distribution of charged impurities in highly compensated samples. The shift is reduced when these charge fluctuations are diminished due to an increasing number of impurities being neutralized via light-induced carrier excitation. These effects have not been taken into account in previous work concerning doped II-VI materials; however, they have to be considered when evaluating the frequently used hypothesis of a deep donor in ZnSe:N as an explanation of low-energy broadband DAP emission. The influence of band fluctuations on the behavior of the DAP luminescence and excitation spectra is qualitatively discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114566
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of submicrometric magnetic structures by electron-beam lithography (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 411-415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submicrometric magnetic structures have been fabricated by electron-beam lithography on Si substrates. High-quality patterns have been obtained with typical length scale of the structures in the range of 100 nm. The designed geometrical configurations are suitable for investigation of their physical properties by transport measurements in a controlled way. In particular, long chains of connected magnetic dots are useful to analyze magnetization reversal processes, whereas ordered arrays of isolated dots can be used to study pinning effects in superconducting films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368042
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5828-5830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compensation of Mg-doped GaN is systematically studied by low-temperature photoluminescence and Raman spectroscopy using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurements. The compensation mechanism is directly related to the incorporation of Mg. Three different deep donor levels are found at 240±30, 350±30, and 850±30 meV from the conduction band, each giving rise to deep unstructured donor-acceptor pair emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368853
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  • 7
    Electronic Resource
    Electronic Resource
    Optical gain and stimulated emission of cleaved cubic gallium nitrite (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the observation of optically excited stimulated emission of c-GaN layers grown by molecular-beam epitaxy (MBE). Stimulated emission was observed at 1.8 K and room temperature. The threshold intensity for excitation of stimulated emission from our MBE-grown c-GaN layers is significantly lower than that reported for c-GaN grown by metalorganic chemical vapor deposition (MOCVD). The experimental data of optical gain and stimulated emission presented in this letter demonstrate that this material has a good potential for the future realization of cleaved cavity blue light-emitting laser diodes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123715
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  • 8
    Electronic Resource
    Electronic Resource
    Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1265-1266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from spatially resolved photoluminescence and Raman experiments on the substrate interface region of wurtzite GaN layers. We show that the broad photoluminescence band with an intensity maximum at 2.4 eV is not an intrinsic property of GaN. We found that this photoluminescence band is strong only near the interface. Our investigations reveal that both the substrate interface and a region of structural reorientation of the layer near the interface act as a source of the photoluminescence. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115947
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  • 9
    Electronic Resource
    Electronic Resource
    Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3320-3322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local strain relaxation as well as inhomogeneous impurity incorporation in epitaxial laterally overgrown GaN (ELOG) structures is microscopically characterized using spectrally resolved scanning cathodoluminescence (CL) and micro-Raman spectroscopy. We correlate the different CL emission spectra with results of spatially resolved Raman-scattering experiments sensing the local strain and free-carrier concentration. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123331
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  • 10
    Electronic Resource
    Electronic Resource
    Vertical strain and doping gradients in thick GaN layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2490-2492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on spatially-resolved low-temperature luminescence and Raman experiments on a 220-μm-thick GaN layer grown on sapphire by hydride vapor phase epitaxy. Our measurements reveal that the peak position of the near-band-gap luminescence strongly depends on the distance to the substrate interface. The luminescence shifts continuously to lower energies with decreasing distance but a strong blue shift occurs directly at the interface. We correlate these effects with the inhomogeneous free-carrier distribution and the strain gradient found by our Raman experiments. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120097
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