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  • 1
    Electronic Resource
    Electronic Resource
    Dispersion relation, electron and hole effective masses in InxGa1−xAs single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1481-1485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical and electrical properties of modulation doped InxGa1−xAs/InP single quantum wells in the composition range 0.56≤x≤0.79. Cyclotron resonance, contactless Shubnikov–de Haas and magnetophotoluminescence experiments are used to obtain two dimensional carrier densities, effective masses of electrons and holes and scattering times. We present data which give evidence for zero magnetic field spin splitting. The dispersion relation for electrons and holes is presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360988
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  • 2
    Electronic Resource
    Electronic Resource
    Application of microwave detection of the Shubnikov–de Haas effect in two-dimensional systems (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7533-7542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave detection of the Shubnikov–de Haas (SdH) effect as a contact-free characterization technique for different types of two-dimensional semiconductor structures is explored in the low magnetic field region. The detection technique and the data analysis are described. The character and relevance of the single-particle relaxation time that can be detected by this technique are distinguished from the usual transport scattering time. The measured values of the carrier concentration and single-particle relaxation time agree with electrical measurements, while the problem of making contacts on the structure is avoided. Uncertainties in the analysis for the single-particle relaxation time are discussed. Cyclotron resonance, optically detected cyclotron resonance, and magneto-photoluminescence are applied as other contact-free techniques on the same samples. The results and suitability of these techniques are compared with the microwave detection of the SdH effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354001
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the 1.047 eV emission in GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3214-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use photoluminescence to study residual transition metal contaminants in GaN layers, which are grown by the sandwich technique either on 6H-SiC substrate or on sapphire substrate. We observe three no-phonon lines in the near infrared optical region at 1.3 eV, 1.19 eV, and 1.047 eV caused by 3d transition metals. The appearance of GaN related host modes in the phonon sideband of these emissions proves that the luminescence centers are incorporated in the hexagonal GaN layers. In this paper we especially focus on the luminescence band with the no-phonon line at 1.047 eV. Temperature dependent photoluminescence measurements reveal an excited state splitting of 8 meV. In photoluminescence excitation spectroscopy we observe a further excited state at 1.6 eV with a fine structure splitting. The appearance of this excited state in the n-type samples gives evidence that the defect must already exist in its luminescent charge state without illumination. The experimental results on the 1.047 eV emission fit to a 4T2(F)→4A2(F) internal electronic transition of a transition metal with a 3d7 electronic configuration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361266
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  • 4
    Electronic Resource
    Electronic Resource
    Excitonic line broadening in bulk grown Cd1−xZnxTe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4523-4526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xZnxTe crystals grown by the traveling heater method have been investigated by low-temperature photoluminescence. The excitonic energy gap as a function of the alloy composition was determined over the complete range of x=0 to x=1. The composition dependent broadening of the neutral acceptor bound exciton (A 0X) line was determined. Theoretical calculations, where the A 0X exciton is treated within the pseudodonor model and the conduction/valence band offset between CdTe and ZnTe is taken into account, give close agreement with the experiment for x≤0.77. Evidence for clustering of Zn atoms is found for x≥0.77.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350798
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor (78/203 meV) in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1454-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of liquid encapsulated Czochralski grown, Ga-rich (melt composed of 55% Ga and 45% As), p-type GaAs were studied by the Hall effect, capacitance-voltage measurements, magnetic circular dichroism, optically detected electron spin resonance, deep level transient spectroscopy (DLTS), and Raman spectroscopy. Two levels with ionization energies of 78 and 203 meV above the valence band edge were examined and fitted to the singly and doubly charged ground states of a double acceptor which is designated an EK2 center. The Raman scattering cross sections for electronic excitations were determined from the defect concentrations measured by DLTS. The EK2 center is electrically passivated via a remote microwave hydrogen plasma technique. It can be reactivated by heat treatments with an activation energy of Ea=1.4 eV. The concentrations of the two levels were equal to each other in four as-grown samples, in samples following passivation, and at all stages during the subsequent reactivation. The observations are inconsistent with previous suggestions that the levels are due to two separate defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347287
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  • 6
    Electronic Resource
    Electronic Resource
    EL2 and anion antisite defects in plastically deformed GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3381-3385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical absorption its magnetic circular dichroism (MCD), optically detected electron spin-resonance (ODESR), and electron nuclear double-resonance (ODENDOR) investigations of plastically deformed semi-insulating GaAs. By plastic deformation arsenic antisite defects are created which show a similar ODESR pattern as EL2 defects present in the material prior to deformation. EL2 and the new antisite defects can be distinguished by their different spectral dependence of the MCD. The new antisite defect formation starts at 2% deformation and is investigated as a function of the degree of deformation; additional EL2 defects are not created. With ODENDOR it is shown that the atomistic structure of the EL2 defects changes in the deformed GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346341
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  • 7
    Electronic Resource
    Electronic Resource
    All-in-one spectrometer—A simple experimental setup for measuring transport characteristics in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4985-4988 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characterization of semiconductor heterostructures requires different measurement techniques such as photoluminescence, Shubnikov–de Haas, and cyclotron resonance. We present a simple experimental setup which allows to make use of all these techniques without changing the equipment. There is no need for electrical contacts. The performance is demonstrated on InxGa1−xAs/InP quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146120
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  • 8
    Electronic Resource
    Electronic Resource
    A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1811-1817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of (approximate)1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (〈50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding energy comparable to the shallow Si donor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305549
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  • 9
    Electronic Resource
    Electronic Resource
    Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1423-1428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical and electrical measurements were carried out on annealed CuIn(Ga)Se2 (CIGS) thin films with Ga content of 10%. Annealing of as-grown In-rich CIGS in air/oxygen at 400 °C changes the photoluminescence spectrum to a spectrum which is usually obtained from as-grown Cu-rich CIGS. The annealing step reduces the donor density and the high compensation. This effect allows the investigation of the defect levels of In-rich CIGS which is not possible in as-grown layers due to the dominating fluctuating potentials. The activation energies for the donors and acceptors in In-rich CIGS were found to be 10 and 75 meV, respectively. The densities are in the order of 1018 cm−3 each, with a compensation ratio of 0.99.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369273
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  • 10
    Electronic Resource
    Electronic Resource
    Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)2 core-shell structure (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 210-212 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of ZnO quantum dots prepared via the wet chemical method was studied. By introducing an annealing treatment (150 °C–500 °C), we also investigated the effect of the change in the structure of the dots on their luminescence properties. Our studies revealed that the surface of the as-prepared dots is passivated by a thin layer of Zn(OH)2, thus, the dots consist of a ZnO/Zn(OH)2 core-shell structure. We present evidence that the weak excitonic transition of ZnO quantum dots is strongly correlated with the presence of the surface shell of Zn(OH)2. When Zn(OH)2 is present, the excitonic transition is quenched. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432763
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