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  • 1
    Electronic Resource
    Electronic Resource
    Metal ion-aromatic complexes. IX. Structure of a seven-coordinate tin(II)-benzene complex, (C6H6)Sn(AlCl4)2.C6H6 (1969)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 91 (1969), S. 7515-7516 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01054a052
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  • 2
    Electronic Resource
    Electronic Resource
    The Colourful World of Porous Silicon: From Interference Filters to Applications (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 54 (Aug. 1997), p. 65-74 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.54.65.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Optimization of III/V binary growth with RHEED in MOMBE (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 101-104 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract  In this paper we report on the optimization of homoepitaxial InAs and InP growth in MOMBE (metalorganic molecular beam epitaxy). A correlation is made between good optical quality material and the observation of RHEED (reflection high energy electron diffraction) intensity oscillations. It will be shown, that in situ RHEED oscillations can be used to determine a growth parameter window in MOMBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050355
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  • 4
    Electronic Resource
    Electronic Resource
    Vertical ordering of islands in Ge-Si multilayers (1996)
    Springer
    Applied physics 62 (1996), S. 575-579 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.16 Bg; 68.35.Bs; 68.55-.Jk; 85.42.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Growth and ordering of GeSi islands in Ge-Si multilayer systems during deposition by Low-Pressure Chemical Vapour Deposition (LPCVD) at 700°C on Si (001) substrates have been investigated for different layer distances by transmission electron microscopy of cross-section and plane-view specimens. Vertical ordering of GeSi islands with almost perfect correlation is observed for distances between the Ge layers of $\leq$ 100 nm. At larger interlayer distances, a continuous decrease of the correlation is found. Vertical ordering in the multilayer system is modelled in terms of the elastic interaction between island nuclei in a newly forming layer and close islands in a buried layer below. Lateral ordering parallel to 〈100〉, as observed previously in larger Ge-Si multilayer systems is not found in our systems, consisting of two Ge layers. This difference indicates that lateral ordering in the upper Ge layers of a large multilayer system is triggered by vertical ordering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571696
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  • 5
    Electronic Resource
    Electronic Resource
    Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique (1999)
    Springer
    Applied physics 69 (1999), S. S803 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Fg; 68.35.Ct; 81.05.Pj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multi-component target material to a given substrate. This advantage of the PLD determined the choice to prepare chalco-genide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Tetargets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051534
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7427-7430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) was performed on p-isotype Si/SiGe/Si Schottky barrier diodes in order to obtain the valence band offset between Si and SiGe. A single strained Si0.7Ge0.3 layer was placed in such a depth in Si so as to be able to fill and empty the quantized SiGe well during the transient capacitance procedure. Broad capacitance transient peaks were obtained and interpreted as being due to the capture of holes by the quantum well. The broadness of the peaks was explained by thickness variations of the SiGe layer. From the dependence of the high temperature side of the DLTS peak on the rate window a valence band offset of 220±20 meV was evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353984
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  • 7
    Electronic Resource
    Electronic Resource
    Schottky barrier height enhancement on n-In0.53Ga0.47As (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2347-2355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier height enhancement on n-InGaAs is studied on structures with thin surface layers of different compositions. Counter-doped p+-InGaAs layers, as well as layers of n- and p-InP, n-GaAs, and n-InGaP of different thicknesses and dopant densities, respectively, were used to enhance the barrier. Titanium was used as a barrier metal to prepare Schottky diodes of different areas and the barrier height is analyzed by current-voltage measurements. It is observed that the barrier height enhancement by p+-InGaAs layers increases with the layer thickness and dopant density, respectively, and effective barrier heights up to 0.63–0.68 eV, i.e., higher values than previously reported, have been measured. The barrier height enhancement by counter-doped p+-InGaAs layers on n-InGaAs can be described by the two-carrier model. Schottky diodes with extremely low reverse current densities have been prepared, JR(1 V) =4.5×10−6 A/cm2. It is shown that lattice-matched InP surface layers can be used as an alternative to enhance the barrier height on n-InGaAs. The barrier height increases with the layer thickness up to φB=0.53–0.55 eV, i.e., up to values previously reported as barrier heights on thick n-InP. Additional barrier enhancement can be achieved by counter doping of the InP surface layer and barrier heights of 0.66 eV have been obtained by p-InP surface layers on n-InGaAs. On structures with barrier-enhanced n-GaAs layers, a remarkable decrease of the reverse current density is observed if the layer thickness is reduced to the critical layer thickness, but the barrier height is very low due to the small n-GaAs thickness. For structures with slightly lattice-mismatched n-InGaP layers (xGaP=0.11) measured barrier heights are similar to those for n-InP enhancement layers of the same thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351576
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  • 8
    Electronic Resource
    Electronic Resource
    Demonstration of a current-controlled three-terminal Nb–InxGa1−xAs/InP Josephson contact (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2348-2350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The supercurrent in a Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP weak link structure is controlled by means of a current injected into the two-dimensional electron gas. For small injection currents the critical current to control current ratio is as large as 20. The measured features can be qualitively explained in terms of a modification of the Andreev level occupation by the injected carriers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122457
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  • 9
    Electronic Resource
    Electronic Resource
    Quantized conductance in a split-gate point contact based on a pseudomorphic InGaAs/InP heterostructure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 871-875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper the fabrication and characterization of split-gate point contacts based on a pseudomorphic InGaAs/InP heterostructure with an indium content of 77% in the strained channel layer is described. Steps in the conductance were observed, which are due to quantized conductance through the quasi one-dimensional constriction formed by the split-gates. Deviations from the ideal quantization are studied by applying differing bias voltages on the two fingers forming the point contact. Since the channel layer of our structure consists of a ternary material it is argued that, beside impurity and interface roughness scattering, alloy scattering processes contribute significantly to the observed deviations of the ideal quantized conductance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360907
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  • 10
    Electronic Resource
    Electronic Resource
    Te doping of GaAs using diethyl-tellurium (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1974-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of the gaseous precursor diethyl-tellurium (DETe) for n-type doping of GaAs is studied. We report on both the properties of the molecular source DETe as well as on the suitability of the dopant element tellurium. Te is found to be an excellent dopant, comparable to Si in the lower-doping regime and superior at highest-doping levels. DETe reveals itself to be a convenient and reproducible doping source. At substrate temperatures above 540 °C, dopant desorption (most probably Te) is observed which limits its applications. Memory effects after doping up to the mid 1018 cm−3 range can be eliminated. At still higher-doping levels an optimized technique limits unintentional background carrier concentrations in subsequent layers to the 1014 cm−3 range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357660
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