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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2348-2350 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The supercurrent in a Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP weak link structure is controlled by means of a current injected into the two-dimensional electron gas. For small injection currents the critical current to control current ratio is as large as 20. The measured features can be qualitively explained in terms of a modification of the Andreev level occupation by the injected carriers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2598-2606 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The higher order zero field steps of long inline and overlap Josephson junctions have been investigated experimentally by means of low temperature scanning electron microscopy. The results indicate that several stable states are possible when more than one fluxon is present in the junction, corresponding to a different spacing among the fluxons during their propagation. These dynamic states should differ by the spectrum of the emitted radiation. Numerical simulations show that the fluxon interaction with plasma oscillations appears to be responsible for the observed behavior. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8242-8246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistivity of spatially selectable regions on p-type InAs is increased by epitaxial growth of a larger band-gap material, i.e., InAlAs, on top of InAs. Due to this InAlAs layer, the formation of a two-dimensional electron gas in the InAs layer is suppressed. This is demonstrated experimentally and supported by calculations of the conductance and valence band profile. At low temperature (4.2 K), the resistance of p-InAs coated with InAlAs and InGaAs is increased by a factor of 180 compared with bare p-InAs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8077-8079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on experimental results with three-terminal superconductor/semiconductor hybrid junctions, which are based on the two-dimensional electron gas at the surface of p-type InAs. A short distance ((approximate)150 nm) between superconducting Nb contacts is obtained using a step geometry. The step geometry allows the realization of different heterostructure potential profiles along the two-dimensional channel. The critical current of the step junctions can be controlled by applying a voltage to highly doped (δ-doped) layers embedded in the heterostructure. With p-δ-doped layers, a p-n junction is introduced in the two-dimensional channel and an asymmetric change of the critical current with respect to the gate voltage or gate current is observed. With n-δ-doped layers, the change is symmetrical. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 106 (1997), S. 321-326 
    ISSN: 1573-7357
    Keywords: 74.50.+r ; 73.25.+i ; 73.40.Sx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Experimental results for novel superconductor/semiconductor hybrid systems are presented. The junctions have a step-like geometry, employing two Nb electrodes which are evaporated onto a step that is etched in InAs. Such a geometry allows one to fabricate short weak links (approximately 200nm) as well as to realize a variety of heterostructure potential profiles along the channel between the superconducting electrodes, since this channel is oriented parallel to the growth direction of the heterostructure. Different semiconductor heterostructures, such as low p-doped InAs, whose native surface inversion layer has the character of a two-dimensional electron gas (2DEG), or npn-InAs heterostructures, where th 2DEG of a thin (150nm) p-layer is sandwiched between two n-InAs layers, are used. By measuring the currentvoltage characteristics at 4.2K, supercurrents, subharmonic gap structures, as well as excess currents, are observed.
    Type of Medium: Electronic Resource
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