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  • 1
    Electronic Resource
    Electronic Resource
    Hot-electron transport in heterostructure devices
    Amsterdam : Elsevier
    Physica B+C 134 (1985), S. 453-465 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(85)90387-0
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  • 2
    Electronic Resource
    Electronic Resource
    Junction field-effect transistor single quantum well optical waveguide modulator employing the two-dimensional Moss–Burstein effect (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2177-2179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modulation-doped junction field-effect transistor incorporating an optical waveguide under the gate modulates light by the carrier band-filling effect (two-dimensional Moss–Burstein effect) in a single quantum well, achieving a 5:1 extinction ratio in a 250-μm-long waveguide for 4 V reverse gate-source bias Vgs swing and 0 V drain-source bias Vds. Similar performance is obtained over a 16 nm spectral range. A novel band-edge transparency effect is observed for Vds〉0 allowing an extinction ratio of 10:1, corresponding to a change in absorption of 92 cm−1 to be obtained through band-gap dilation by hot electrons at biases of Vds =8 V. Below-band-gap refractive index modulation of 1.6×10−3 is obtained for a Vgs swing of 2.4 V. The novel junction field-effect transistor optical modulator also functions as a photovoltaic or photoconductive optical detector, a transistor, and a light-emitting diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101157
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  • 3
    Electronic Resource
    Electronic Resource
    Current-controlled negative differential resistance in four-terminal heterostructure devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2452-2454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate new effects of the current-controlled (S-shaped) negative differential resistance (NDR) in different circuit configurations of four-terminal modulation-doped AlGaAs/GaAs heterostructure devices, with the magnitude of the voltage drop varied by external electrodes. We observe two S-shaped instabilities having different physical origins. One effect arises due to an avalanche in the top AlGaAs layer underneath the reverse-biased gate region. Another phenomenon relies on the creation, during the avalanche, of nonequilibrium hot electrons at the conducting channel (quantum well). This dramatically enhances electron flow over the heterostructure barriers and gives rise to a strongly pronounced current-controlled NDR with a peak-to-valley ratio of ∼10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101069
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogenation of multiple-quantum-well optical-modulator structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2174-2176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of hydrogenated multiple-quantum-well (MQW) optical-modulator structures via electron-cyclotron-resonance-derived plasmas. Responsivity, optical transmission, current-voltage, and capacitance-voltage characterizations of Schottky- as well as pin-diode modulator structures were performed. We find photocurrent-collection efficiency and photoluminescence intensity to be enhanced by hydrogenation, with measurable improvement in electrically biased exciton-absorption linewidth also seen. We interpret our results as arising from increased carrier lifetime in the MQW region, because of passivation of deep levels/defects. The improvements were stable after 550 °C heat treatment. These effects may be useful for improving the yield of usable MQW devices grown in a given system. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112752
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  • 5
    Electronic Resource
    Electronic Resource
    New transport phenomena in a ballistic heterostructure field-effect transistor (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5259-5262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed new transport properties in an InGaAs/InAlAs field-effect transistor with source-drain separation of ∼40 nm. Through measurements of real-space transfer current to the gate we obtained clear evidence of ballistic electron transport in the two-dimensional channel of the device. Another important new feature is the drain current saturation at low drain biases. This effect is explained by a poor electron exchange at the interface of a two-dimensional gas with bulk at the device contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354266
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  • 6
    Electronic Resource
    Electronic Resource
    Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1320-1322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of photovoltaic infrared photodetection in an n-type GaAs/AlGaAs superlattice within the optical range 3.6–6.2 μm. A built-in graded AlGaAs barrier (∼0.2 eV) provides charge polarization in the sample by allowing the optically excited electrons in the second miniband of the superlattice to diffuse over this barrier. The optical polarization of the infrared signal is consistent with the selection rules applicable to the superlattice. The infrared photoresponse results from first-to-second miniband as well as shallow donor-to-second miniband photoexcitations within the superlattice. Donor-to-second miniband photoexcitation is dominant at low temperatures (〈25 K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99147
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  • 7
    Electronic Resource
    Electronic Resource
    Theory of the quantum well emission transistor (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 821-829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical analysis of the physical processes and high-speed performance of the recently proposed quantum well emission transistor employing quantum properties of electrons in a single quantum well (QW). The physical mechanism of device operation is based on an exponentially strong variation of the thermionic emission from the QW to the collector induced by the charge density modulation in the QW by the gate voltage. The calculation is performed for the selected structure optimized for the highest device performance.The most essential part of calculation is related to the effect of collector and gate voltages on the ground-state energy in the QW. A variational approach is used to take into account the presence of electrons in the QW. The analysis presented shows a high potential of this device for high-speed, large current drive applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343072
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum well emission transistor with tunneling output current (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a novel tunneling quantum well emission transistor (TQWET), in which the gate-induced modulation of the Fermi level in the quantum well leads to a strong variation of the tunneling current to the collector through the specially designed collector barrier. The device is calculated to possess a high transconductance and a large current drive. Low-temperature utilization of the transistor implies a high electron mobility in the quantum well (QW) and, therefore, low lateral resistance along the QW, a major current and speed limitation of the device. With this limitation taken into account, the TQWET shows the delay times ∼1.4 and 1.5 ps for temperatures 10 and 77 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343840
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic field-induced suppression of acoustic phonon emission in a superlattice (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 841-845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze theoretically the influence of magnetic field on the electron lifetime in the excited state of a specially designed superstructure allowing electron injection into the excited miniband. We show that the discrete electron energy spectrum arising in the magnetic field dramatically suppresses the acoustic phonon emission rate and gives rise to electron accumulation in the excited subband. This can be used for obtaining stimulated emission between minibands as well as between Landau levels. The latter is of particular interest since the energy of this radiation can be varied by magnetic field. We also obtain an oscillatory dependence of electron lifetime in the excited state on magnetic field which can be verified in a simple photoluminescence experiment. Finally, we extend our considerations to the case of quantum dots, capable of providing complete energy quantization in the absence of magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347319
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of resonant tunneling effects in a three-terminal device (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 305-308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of studying the resonant tunneling into a single quantum well (SQW) in a three-terminal device. The resonant process manifests itself as a peak and negative-resistance effect in lateral current in the SQW, the amplitude and position of the peak being controlled by the third collector, electrode. In addition, a peak of resonant current with a pronounced negative transconductance was simultaneously measured in the collector circuit as a result of real-space hot-electron transfer from the SQW to the collector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339148
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