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  • 1985-1989  (10)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Current-controlled negative differential resistance in four-terminal heterostructure devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2452-2454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate new effects of the current-controlled (S-shaped) negative differential resistance (NDR) in different circuit configurations of four-terminal modulation-doped AlGaAs/GaAs heterostructure devices, with the magnitude of the voltage drop varied by external electrodes. We observe two S-shaped instabilities having different physical origins. One effect arises due to an avalanche in the top AlGaAs layer underneath the reverse-biased gate region. Another phenomenon relies on the creation, during the avalanche, of nonequilibrium hot electrons at the conducting channel (quantum well). This dramatically enhances electron flow over the heterostructure barriers and gives rise to a strongly pronounced current-controlled NDR with a peak-to-valley ratio of ∼10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101069
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Junction field-effect transistor single quantum well optical waveguide modulator employing the two-dimensional Moss–Burstein effect (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2177-2179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modulation-doped junction field-effect transistor incorporating an optical waveguide under the gate modulates light by the carrier band-filling effect (two-dimensional Moss–Burstein effect) in a single quantum well, achieving a 5:1 extinction ratio in a 250-μm-long waveguide for 4 V reverse gate-source bias Vgs swing and 0 V drain-source bias Vds. Similar performance is obtained over a 16 nm spectral range. A novel band-edge transparency effect is observed for Vds〉0 allowing an extinction ratio of 10:1, corresponding to a change in absorption of 92 cm−1 to be obtained through band-gap dilation by hot electrons at biases of Vds =8 V. Below-band-gap refractive index modulation of 1.6×10−3 is obtained for a Vgs swing of 2.4 V. The novel junction field-effect transistor optical modulator also functions as a photovoltaic or photoconductive optical detector, a transistor, and a light-emitting diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101157
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Quantum well tunnel triode (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 398-400 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a novel three-terminal device, the tunnel triode, in which the current within the quantum well is a part of the tunnel current through the p+-n+ junction. A tunnel-diode-like negative differential resistance effect with peak-to-valley ratio as high as 20 was observed, the tunnel current being controlled by the gate voltage. We show that tunneling occurs not in the quantum well, but in the heavily doped n+-Al0.3Ga0.7As layer, and it is preceded by a real-space hot-electron transfer from the quantum well into this layer. Logic operation of a bistable switch was obtained in a circuit comprising a tunnel triode and a series resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99478
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1320-1322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of photovoltaic infrared photodetection in an n-type GaAs/AlGaAs superlattice within the optical range 3.6–6.2 μm. A built-in graded AlGaAs barrier (∼0.2 eV) provides charge polarization in the sample by allowing the optically excited electrons in the second miniband of the superlattice to diffuse over this barrier. The optical polarization of the infrared signal is consistent with the selection rules applicable to the superlattice. The infrared photoresponse results from first-to-second miniband as well as shallow donor-to-second miniband photoexcitations within the superlattice. Donor-to-second miniband photoexcitation is dominant at low temperatures (〈25 K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99147
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Novel high-speed transistor based on charge emission from a quantum well (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 904-906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel unipolar transistor employing properties of electrons confined in a single quantum well is proposed. The gate modulation of a charge density in the quantum well results in an exponentially strong variation of the output thermionic emission current to the collector. The device combines the attractive features of both bipolar and field-effect transistors and provides a high speed (2–3 ps intrinsic delay time) with a large current drive (∼105 A/cm2) and high transconductances (1–10 S/mm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99268
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Ohmic, superconducting, shallow AuGe/Nb contacts to GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3204-3210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An emerging new class of superconductor-semiconductor devices requires Ohmic superconducting contacts which do not diffuse deeply into a semiconductor. We developed a contact to GaAs based on ∼150 A(ring) of AuGe covered with ∼2000 A(ring) of Nb annealed in reducing atmosphere at 390–420 °C for 1–5 s. The resulting contact has linear I-V characteristics at all temperatures down to 4.2 K, resistivity of ∼2×10−6 Ω cm2 (∼0.1 Ω mm), and superconducting transition temperature Tc (approximately-greater-than)8 K. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) studies revealed very shallow penetration of the active dopant Ge into GaAs; the upper limit for the thickness of the doped layer with Ge concentration over 1017 cm−3 is estimated as 200–300 A(ring). Gold, a nonactive dopant (deep level) drops to below 1018 cm−3 within the same distance, with the possible tail extending further. Morphology and uniformity of a contact, as revealed in TEM and optical microscopy, is good, owing to the Nb overlayer which prevents AuGe from "balling up'' upon melting. These contacts can be used in low-temperature devices and conventional devices based on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337738
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum well emission transistor with tunneling output current (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a novel tunneling quantum well emission transistor (TQWET), in which the gate-induced modulation of the Fermi level in the quantum well leads to a strong variation of the tunneling current to the collector through the specially designed collector barrier. The device is calculated to possess a high transconductance and a large current drive. Low-temperature utilization of the transistor implies a high electron mobility in the quantum well (QW) and, therefore, low lateral resistance along the QW, a major current and speed limitation of the device. With this limitation taken into account, the TQWET shows the delay times ∼1.4 and 1.5 ps for temperatures 10 and 77 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343840
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Theory of the quantum well emission transistor (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 821-829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical analysis of the physical processes and high-speed performance of the recently proposed quantum well emission transistor employing quantum properties of electrons in a single quantum well (QW). The physical mechanism of device operation is based on an exponentially strong variation of the thermionic emission from the QW to the collector induced by the charge density modulation in the QW by the gate voltage. The calculation is performed for the selected structure optimized for the highest device performance.The most essential part of calculation is related to the effect of collector and gate voltages on the ground-state energy in the QW. A variational approach is used to take into account the presence of electrons in the QW. The analysis presented shows a high potential of this device for high-speed, large current drive applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343072
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of resonant tunneling effects in a three-terminal device (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 305-308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of studying the resonant tunneling into a single quantum well (SQW) in a three-terminal device. The resonant process manifests itself as a peak and negative-resistance effect in lateral current in the SQW, the amplitude and position of the peak being controlled by the third collector, electrode. In addition, a peak of resonant current with a pronounced negative transconductance was simultaneously measured in the collector circuit as a result of real-space hot-electron transfer from the SQW to the collector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339148
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    New negative differential resistance effects in the negative resistance field-effect transistor (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2186-2188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report two new effects of negative differential resistance in the modulation-doped AlGaAs/GaAs negative resistance field-effect transistor. Both effects are well controlled by a third electrode. Presence of a top n+ AlGaAs layer causes a hot-electron real-space transfer to this layer, and prevents the electron transfer to the collector. Creation of the high-field domain in the source-drain channel is needed to activate the hot-electron injection to the collector. The real-space transfer to the top n+AlGaAs layer, combined with the quenching of the high-field domain by the collector bias, are responsible for the appearance of the observed new negative differential resistance effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344316
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