Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 425-429
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose a novel tunneling quantum well emission transistor (TQWET), in which the gate-induced modulation of the Fermi level in the quantum well leads to a strong variation of the tunneling current to the collector through the specially designed collector barrier. The device is calculated to possess a high transconductance and a large current drive. Low-temperature utilization of the transistor implies a high electron mobility in the quantum well (QW) and, therefore, low lateral resistance along the QW, a major current and speed limitation of the device. With this limitation taken into account, the TQWET shows the delay times ∼1.4 and 1.5 ps for temperatures 10 and 77 K, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343840
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