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  • 1
    Electronic Resource
    Electronic Resource
    Optoelectronic device mapping using differential imaging techniques (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3837-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mapping technique has been developed that uses differential imaging to characterize semiconductor optoelectronic devices. Although the technique was developed for examination of optical modulators, it has been extended to provide information on the uniformity and bandgap of any material through which one can transmit light. The sharpness of the bandedge, maximum absorption strength, and the film thickness determine the sensitivity of the technique for any particular application. For example, the bandedge sensitivity in 100 periods of InGaAs/GaAs multiple quantum wells was ±20 μeV and can be detected at each location in the field of view in under three minutes. This technique has been applied to modulators designed using strained layer materials for use at a 1-μm operating wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349187
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of stepped-well and square-well multiple-quantum-well optical modulators (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1411-1414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The responsivity and transmission performance of 60-period p-i-n multiple-quantum-well (MQW) optical modulators having single or double steps in the quantum well (QW) has been experimentally compared to a square-QW control sample. It has been confirmed that significantly increased shift of the exciton with applied electric field [the quantum confined Stark effect (QCSE)] is obtained in the stepped QWs as compared to a conventional square QW. However, no meaningful increase in optical modulation performance is found, due to broadening of the exciton transition in the stepped QWs. All MQWs contained nominal 45 A(ring) Al0.3Ga0.7As barriers. Single-step QWs consisted of a 15 A(ring) GaAs region with an 85 A(ring) Al0.1Ga0.9As step. Double-step QWs consisted of a central Al0.15Ga0.85As plateau, with 20 A(ring) GaAs regions on either side. The square QW consisted of 90 A(ring) of GaAs. Excellent agreement between measured QCSE and tunneling resonance calculations was found. Our results indicate that stepped MQW devices are intrinsically more susceptible to growth induced degradation than square MQW modulators. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360297
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  • 3
    Electronic Resource
    Electronic Resource
    InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1366-1368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 A(ring) InAsyP1−y quantum wells with 100 A(ring) InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104310
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  • 4
    Electronic Resource
    Electronic Resource
    InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 548-550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of strained-layer InxGa1−x As/GaAs 50- and 100-period multiple quantum well optical modulators at wavelengths ranging from 1.02 to 1.07 μm. Structures were grown on GaAs substrates, as well as on strain relief InxGa1−xAs buffer layers. Devices show favorable electrical characteristics and absorption contrasts up to 57% at the exciton peak. Optical modulation of a Nd:YAG laser is demonstrated, via operation of self-electro-optic effect devices at 1.064 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103643
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  • 5
    Electronic Resource
    Electronic Resource
    Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1542-1544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental realization of a three-terminal negative differential resistance (NDR) device. The device consists of a GaAs-AlxGa1−xAs double-barrier tunneling heterostructure in series with a recessed-gate metal-semiconductor field-effect transistor on a semi-insulating substrate. Basic dc characteristics for three samples grown by metalorganic chemical vapor deposition are shown. All samples exhibit NDR at 77 K, with peak-to-valley current ratios between 2 and 7. Current densities at the peak of the NDR range from 0.5 to 380 A/cm2. The peak-to-valley current ratio and the voltage location of the NDR can be modulated with gate bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98629
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  • 6
    Electronic Resource
    Electronic Resource
    Photoresponse of asymmetrically doped GaAs-AlAs heterostructures under external bias (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3755-3758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present new experimental results in the photoresponse behavior of GaAs-AlAs-GaAs heterostructures. Structures consisted of a layer of AlAs several thousand angstroms thick, sandwiched between layers of GaAs which were several microns thick. The layer of GaAs nearest the surface was doped degenerately n type, whereas, the layer beneath the AlAs was doped nondegenerately n type. The asymmetric doping and the AlAs layer are shown to play an important role in determining the photoresponse. We present photocurrent per incident photo data, as a function of incident light energy, at a variety of external biases. We also present current-voltage curves taken while samples were illuminated by an incandescent lamp. Zero bias photocurrent consistent with electron transport from the nondegenerate region beneath the AlAs to the degenerate region forming the surface is observed. As negative voltage is applied to the top of the sample, this photocurrent changes sign. These results are explained by introducing the concept of a "collecting interface'' to account for fields and scattering in the AlAs. Further, we explain why the shape of the photocurrent spectrum depends upon the sign of the photocurrent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337587
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation of multiple-quantum-well optical-modulator structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2174-2176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of hydrogenated multiple-quantum-well (MQW) optical-modulator structures via electron-cyclotron-resonance-derived plasmas. Responsivity, optical transmission, current-voltage, and capacitance-voltage characterizations of Schottky- as well as pin-diode modulator structures were performed. We find photocurrent-collection efficiency and photoluminescence intensity to be enhanced by hydrogenation, with measurable improvement in electrically biased exciton-absorption linewidth also seen. We interpret our results as arising from increased carrier lifetime in the MQW region, because of passivation of deep levels/defects. The improvements were stable after 550 °C heat treatment. These effects may be useful for improving the yield of usable MQW devices grown in a given system. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112752
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  • 8
    Electronic Resource
    Electronic Resource
    Point source heating effects in multiple quantum well modulators (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 420-422 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple quantum well modulators have been proposed for use in photonic switching and optical interconnection systems. When used with the smallest devices and at competitive data rates, heating of the devices results. The heat is generated in a small volume coincident with the active optical area and alters the device parameters. In this letter we detail point source heating effects theoretically and experimentally in AlGaAs/GaAs and InGaAs/GaAs multiple quantum well modulators. These results indicate that when using small devices with small optical spots detrimental effects occur at average optical powers of less than 500 μW which limits the maximum data rate of optical systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107901
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  • 9
    Electronic Resource
    Electronic Resource
    Erratum: "Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP'' [Appl. Phys. Lett. 60, 2846 (1992)] (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3062-3062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The last sentence in the paragraph at the top of the second column of the second page of the article should read: "Since previously reported samples like B have been described with sharper excitonic features (HWHM of 6 meV at 300 K and 2 meV at 10 K) it is reasonable to expect that sample C could be further improved.4''
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108502
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  • 10
    Electronic Resource
    Electronic Resource
    Suppressed photocurrent multiple-quantum-well optical modulators by proton implantation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the reduction of power dissipation in absorptive semiconductor optical modulators via reduction in photocurrent. We present experimental results for proton implantation of p-i-n-multiple-quantum-well modulators to levels of 1×1012 , 1×1013, and 1×1014 cm−2. We find that photocurrent can be significantly reduced with moderate reduction in modulation performance relative to the unimplanted device. Application to asymmetric self-electro-optic devices is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106555
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