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  • 1
    Electronic Resource
    Electronic Resource
    High-resistance regions produced in an (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3290-3292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistance, Hall mobility, and carrier concentration as a function of He ion dose have been measured across the In1−x−yGaxAlyAs system. Starting with heavily doped n-type epitaxial layers (n∼1018 cm−3), except for the lowest band-gap constituent In0.53Ga0.47As, the sheet resistance can be increased more than five orders of magnitude for He doses above 2.5×1013 cm−2. For the other constituents, the sheet resistance can be made high enough and sufficiently thermally stable to be potentially useful for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341520
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion studies of the Si δ-doped GaAs by capacitance-voltage measurement (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1578-1580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using triethylgallium and arsine, high-quality GaAs can be grown at a relatively low substrate temperature of 500 °C by chemical beam epitaxy. Such a low temperature has the advantage of a negligible Si diffusion effect. Capacitance-voltage (C-V) measurements of the Si δ-doped GaAs show extremely narrow profile widths of 22 A(ring) at 300 K and 18 A(ring) at 77 K, indicating a very high degree of Si spatial localization has been achieved. The subsequent annealing experiments reveal that significant Si segregation and diffusion exist at a high growth temperature of ∼600 °C, usually employed in conventional molecular-beam epitaxy. The C-V widths of the annealed δ-doped structures also provide an excellent measure to determine the Si diffusion constant in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341789
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  • 3
    Electronic Resource
    Electronic Resource
    Optoelectronic transient response of the self-aligned double-heterostructure optoelectronic switch (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1797-1799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fabrication and characterization of a three-terminal self-aligned double-heterostructure optoelectronic switch in the light-emitting diode configuration are reported. Results demonstrating device switching characteristics are presented, in which switching is triggered by electrical or optical stimuli. Electrical switch-on and switch-off transitions occur in 10 ns, under electrical stimulus. Corresponding optical turn-on times of 60 ns are observed. With an optical switching energy of 0.02 fJ/μm2, an electrical switch-on transition of 4 ns is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99784
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si-implanted InP substrates by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2449-2451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe procedures to grow InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors (HBTs) on Si-implanted InP substrates by molecular beam epitaxy (MBE). The combined effects of ion implantation and annealing necessitates a significant modification of MBE growth conditions in order to obtain high quality epilayers and heterojunctions. Approximately 50% higher As4 flux is needed, especially during the initial heat cleaning step, to obtain layers with good surface morphology and HBTs with dc characteristics similar to those of HBTs grown on regular InP substrates. InGaAlAs/InGaAs HBTs grown under modified conditions on implanted and annealed InP have dc current gains of 2000 at a current density of 2 kA/cm2 . Similar MBE growth conditions can be used to grow other minority-carrier lifetime sensitive devices directly on implanted and annealed InP wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351108
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  • 5
    Electronic Resource
    Electronic Resource
    Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4150-4153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210 °C at a dose of 2.5×1014 cm−2 with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337497
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  • 6
    Electronic Resource
    Electronic Resource
    Semi-insulating properties of Fe-implanted InP. I. Current-limiting properties of n+-semi-insulating-n+ structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1780-1786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor-insulator-semiconductor n+-SI-n+ InP structures have been used effectively for current confinement in channeled substrate buried heterostructure lasers. The semi-insulating (SI) layer is produced by the implantation of Fe into a n+-InP substrate. The properties of this implanted layer and the role of the deep acceptor levels of Fe in controlling the transport properties of SI-InP are studied in this and the following paper (Part II). The principle of compensation is discussed and applied to the implanted layer, and current injection phenomena are described, emphasizing the important role of space-charge-limited (SCL) current. The electrical characteristics of the n+-SI-n+ structures reveal the classic trap-controlled SCL current behavior at low temperatures with a trap-filled limit achieved at 1.2 V, and an approximately trap-free SCL current at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336028
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  • 7
    Electronic Resource
    Electronic Resource
    Semi-insulating properties of Fe-implanted InP. II. Deep levels of Fe from the study of p+-semi-insulating-n+ diodes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1787-1797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of semi-insulating (SI) Fe-implanted InP are studied via the electrical and optical properties of p+-SI-n+ InP diodes. The current-voltage-temperature characteristics reveal a rich variety of transport processes in which the deep levels of Fe play a prominent role, including tunneling and field-assisted thermionic emission from these levels, and space-charge-limited double-injection current effects. From the analysis of these currents, different experimental estimates of the position of the deep levels have been obtained. These are compared with a direct experimental determination of their position from the measurement of the photocurrent spectra of the p+-SI-n+ diodes. These results establish the position of the iron acceptors at a level lying between 0.60–0.65 eV below the conduction band minimum. Capacitance spectroscopy of the p+-SI-n+ diodes revealed additional defect levels and carrier freeze-out effects at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336029
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  • 8
    Electronic Resource
    Electronic Resource
    Metalorganic vapor-phase-epitaxial growth of Fe-doped In0.53Ga0.47As (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1172-1175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Fe-doped In0.53Ga0.47As, grown by metalorganic chemical vapor deposition, are described. Fe concentrations in the 1017–1018 cm−3 range are readily obtained, resulting in electrical resistivities of 50–1000 Ω cm. Holes are the majority carrier, but the effective mobility can be predominantly due to minority electrons. From measurements of the temperature dependence of the resistivity and mobility, the Fe acceptor ionization energy of 0.35 eV is determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338163
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  • 9
    Electronic Resource
    Electronic Resource
    Doping studies using thermal beams in chemical-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4182-4185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of chemical-beam expitaxy instead of chemical vapor deposition allows the incorporation of thermal atomic beams for doping. Dopant profile measurements by a differential capacitance-voltage technique and secondary ion mass spectroscopy technique show that there is no surface segregation with Si dopants in InP at all growth temperatures (〈600 °C). On the other hand, Sn and to a lesser extent Be show surface segregation which can be reduced by growing the InP at a lower temperature (〈550 °C). From this study, it is seen that Si should be preferred as the n-type dopant in producing InP/InGaAs high electron mobility transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337503
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  • 10
    Electronic Resource
    Electronic Resource
    Resistance and mobility changes in InGaAs produced by light ion bombardment (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 665-667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured sheet resistance and mobility changes for a series of In0.53Ga0.47As layers as a result of hydrogen, boron, and beryllium implantation. We find that boron and beryllium implantation can produce a two order-of-magnitude increase in sheet resistance due mainly to a decrease in mobility accompanied by a smaller decrease in the sheet carrier concentration. Hydrogen implantation results in a decrease in sheet resistance due to an increase in electron concentration accompanied by only a small mobility decrease. The increase in sheet resistance due to boron and beryllium implants is not large enough to have obvious application for device isolation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337410
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