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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen production from the reaction of solvated electrons with benzene in water-ammonia mixtures (1980)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 84 (1980), S. 3272-3273 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100461a028
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  • 2
    Electronic Resource
    Electronic Resource
    Electron-beam evaporated phosphosilicate glass encapsulant for post-implant annealing of GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4194-4198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam deposited films of phosphosilicate (PSG) have been investigated as dielectrics for the encapsulation of Si-implanted GaAs for the purpose of post-implant annealing. The processing parameters that were optimized included the thickness of PSG film, the substrate temperature, and the annealing time and temperature. PSG films deposited at temperatures ≥300 °C showed no signs of deterioration up to temperatures in excess of 900 °C for 30-min anneals carried out in a forming gas and/or nitrogen ambient. Depth profiles in excellent agreement with the Lindhard–Scharff–Schiott curves were obtained with 1000-A(ring)-thick films when annealed at 850 °C for 30 min. The diffusion coefficient of implanted silicon was found to be an order of magnitude smaller for the PSG films than that for the conventional plasma assisted chemical vapor deposited SiO2 films at 850 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341334
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  • 3
    Electronic Resource
    Electronic Resource
    Dark line defect growth in optically pumped AlxGa1−xAs laser material (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 677-682 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of dark line defects (DLD's) has been observed in epitaxial AlGaAs wafers under optical pumping. The growth velocity as a function of optical intensity is given by V=AI1.8. In addition to recombination-enhanced defect motion, stress-induced dislocation glide is shown to contribute to the elongation of DLD's in 〈100〉 and 〈110〉 directions. A climb mechanism may be responsible for the thickening of DLD's after growth in 〈100〉 directions. The asymmetric growth of DLD's between 〈110〉 and 〈11¯0〉 directions is attributed to the existence of α and β dislocations and the absence of 90° rotational symmetry in the zinc-blende structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336181
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  • 4
    Electronic Resource
    Electronic Resource
    Annealing behavior of ion-implanted Fe in InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1698-1700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of implanted Fe+ in InP is studied using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). Dual implants (275 keV, 1.25×1014 cm−2 and 400 keV, 1.25×1014 cm2) were performed at room temperature (RT) and at 200 °C and then annealed at 725 °C for one hour. TEM reveals a 3100-A(ring) amorphous region in the unannealed RT implant. Significant defect production is observed in this sample at the amorphous-crystalline interface following the anneal. SIMS reveals an Fe pileup at this interface. No such pileup is observed in the samples implanted at 200 °C. The data also suggest an Fe diffusion constant which is lower than typically reported in the literature. The results are contrasted with the SIMS study by M. Gauneau, H. L'Haridon, A. Rupert, and M. Salvi [J. Appl. Phys. 53, 6823 (1982)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336040
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  • 5
    Electronic Resource
    Electronic Resource
    Semi-insulating properties of Fe-implanted InP. I. Current-limiting properties of n+-semi-insulating-n+ structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1780-1786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor-insulator-semiconductor n+-SI-n+ InP structures have been used effectively for current confinement in channeled substrate buried heterostructure lasers. The semi-insulating (SI) layer is produced by the implantation of Fe into a n+-InP substrate. The properties of this implanted layer and the role of the deep acceptor levels of Fe in controlling the transport properties of SI-InP are studied in this and the following paper (Part II). The principle of compensation is discussed and applied to the implanted layer, and current injection phenomena are described, emphasizing the important role of space-charge-limited (SCL) current. The electrical characteristics of the n+-SI-n+ structures reveal the classic trap-controlled SCL current behavior at low temperatures with a trap-filled limit achieved at 1.2 V, and an approximately trap-free SCL current at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336028
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  • 6
    Electronic Resource
    Electronic Resource
    Semi-insulating properties of Fe-implanted InP. II. Deep levels of Fe from the study of p+-semi-insulating-n+ diodes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1787-1797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of semi-insulating (SI) Fe-implanted InP are studied via the electrical and optical properties of p+-SI-n+ InP diodes. The current-voltage-temperature characteristics reveal a rich variety of transport processes in which the deep levels of Fe play a prominent role, including tunneling and field-assisted thermionic emission from these levels, and space-charge-limited double-injection current effects. From the analysis of these currents, different experimental estimates of the position of the deep levels have been obtained. These are compared with a direct experimental determination of their position from the measurement of the photocurrent spectra of the p+-SI-n+ diodes. These results establish the position of the iron acceptors at a level lying between 0.60–0.65 eV below the conduction band minimum. Capacitance spectroscopy of the p+-SI-n+ diodes revealed additional defect levels and carrier freeze-out effects at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336029
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  • 7
    Electronic Resource
    Electronic Resource
    Simple heating chamber for alloying contacts to Hall-effect samples (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 793-794 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a simple and efficient heating chamber which is useful for alloying metal-semiconductor contacts for Hall-effect measurements. Wafer sections up to 1 cm×1 cm can be heated to 750 °C within 2 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141023
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  • 8
    Electronic Resource
    Electronic Resource
    Basophil histamine release in insect venom allergy (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 43 (1988), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The aim of the present study was to investigate venom-related and venom-non-related immunological reactions in patients stung by bee or wasp. Sixteen consecutive patients (7 with local and 9 with systemic reactions) were tested with skin tests, RAST and basophil histamine release (BHR) test immediately after the insect sting and 2, 4, and 16 weeks later. No test was useful immediately after the insect sting, the “anergic period”. In agreement with earlier findings, the SPT was the only allergy test that showed statistically significant differences between patients with local and systemic reactions, although a great overlap was found. Release of histamine from basophils after incubation with anti-IgE also showed statistically significant differences between local and systemic reactions. Further studies are needed, especially measurement of BHR after incubation with anti-IgE before insect stings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1988.tb00407.x
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  • 9
    Electronic Resource
    Electronic Resource
    High-dose local steroid treatment in bronchopulmonary aspergillosis (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 43 (1988), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Two patients with allergic bronchopulmonary aspergillosis (ABPA) have been treated with a high dose (1600 μg daily) of inhaled corticosteroid for 18 months. A beneficial effect with regard to asthmatic symptoms was observed in both patients. During the first 14 months of the observation period no significant changes were observed in lung function parameters. Bronchial histamine challenge showed decreased hyperreactivity. IgE decreased in both patients, while specific IgE and IgG remained the same. After 14 months of treatment one of the patients developed severe, acute exacerbation of the ABPA and was treated with high-dose prednisolone and local steroid. The patient is now fully recovered and has continued on local steroid therapy. The other patient had no episodes of exacerbation and remains stable on this treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1988.tb02040.x
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of dopants implanted into preamorphized silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 683-687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid thermal annealing behavior of BF+2 and As+ +BF+2 implanted into crystalline and preamorphized silicon is studied. After solid phase epitaxy nearly complete electrical activity is obtained without channeling tails (for the preamorphized silicon) or significant thermal diffusion. Dislocation loops always appear near the amorphous-crystalline (α/c) interface of the preamorphized layer after solid phase epitaxy annealing (called "deep disorder''). For preamorphization using Si+ damage into room-temperature silicon targets, dislocations also span between the deep disorder and the surface, called "spanning dislocations.'' The spanning dislocations are eliminated by preamorphization using Ge+ implanted into room-temperature silicon targets. Transmission electron microscopy studies show the spanning dislocations move to the surface under thermal treatment, while the deep disorder remains to act as a getter region. The deep disorder is shown to getter F, or Au when Au is intentionally diffused from the wafer backside. The same kind of disorder correlates the limited diffusion behavior of B for BF+2 implants into crystalline Si. Otherwise, for the cases studied, the secondary ion mass spectrometry and Rutherford backscattering spectrometry profiles show nearly normal diffusive behavior for B or As dopants for 10-sec rapid thermal anneal. General physical interpretations are noted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336182
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