Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 3042-3044
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the operation of a vacuum collector–semiconductor transistor based on negative electron affinity cold cathode technology. The unique aspect of this transistor is that the collector is separated from the emitter-base junction by a vacuum drift region, yielding an intrinsic collector capacitance which is an order of magnitude lower than that for conventional bipolar transistors. The collector charging time is thus proportionally smaller. Transport in the vacuum drift region is truly ballistic and depends only on the collector-base bias, enabling a wide range of device concepts which are impossible or impractical in conventional transistors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350990
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