Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    High-resolution x-ray characterization of low-temperature GaAs/As superlattice grown by molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3626-3628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230 °C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700 °C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900 °C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111225
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    As precipitate redistribution in Si δ-doped low-temperature GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5697-5701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution x-ray diffractometer and transmission electron microscope (TEM) are used to characterize the redistribution of As precipitates in Si δ-doped GaAs grown by molecular-beam epitaxy at low substrate temperature (230 °C). The analysis results indicate that superlattice satellite peaks, as observed for samples annealed at 700–900 °C for 10 min, are attributed to the formation of the GaAs/As superlattice. Also, the intensity of satellite peaks in x-ray rocking curves and TEM observations reveals the varying degree of As precipitates confined on the Si δ-doped planes. Furthermore, the asymmetry of the satellite peaks clearly indicates the lattice expansion and contraction of the annealed low-temperature epitaxial layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357076
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Adsorption and desorption of organotin compounds in organic and mineral soils (2004)
    Oxford, UK; Malden, USA : Blackwell Science Ltd
    European journal of soil science 55 (2004), S. 0 
    Details
    ISSN: 1365-2389
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Organotin compounds (OTC) are deposited from the atmosphere into terrestrial ecosystems and can accumulate in soils. We studied the adsorption and desorption of methyltin and butyltin compounds in organic and mineral soils in batch experiments. The adsorption and desorption isotherms for all species and soils were linear over the concentration range of 10–100 ng Sn ml−1. The strength of OTC adsorption correlated well with the carbon content and cation exchange capacity of the soil and was in the order mono- 〉 di- 〉 tri-substituted OTCs and butyltin 〉 methyltin compounds. The OTC adsorption coefficients were much larger in organic soils (Kd 〉 104) than in mineral soils. The adsorption and desorption showed a pronounced hysteresis. Trimethyltin adsorption was partly reversible in all soils (desorption 2–12% of the adsorbed amounts). Dimethyltin, tributyltin and dibutyltin exhibited reversible adsorption only in mineral soils (desorption 4–33% of the adsorbed amounts). Mono-substituted OTCs adsorbed almost irreversibly in all soils (desorption 〈 1% of adsorbed amounts). Trimethyltin was more mobile and more bioavailable in soils than other OTCs. It might therefore be leached from soils and accumulate in aquatic ecosystems. The other OTCs are scarcely mobile and are strongly retained in soils.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2389.2004.00634.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoreflectance study of Si delta-doped low-temperature GaAs grown by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2124-2127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance spectroscopy has been used to study the surface electric field of Si delta-doped GaAs grown by molecular beam epitaxy at a low substrate temperature (230 °C). Franz–Keldysh oscillations in the reflectance spectra are observed for samples annealed above 700 °C for 10 min. The deduced surface electric field increases with annealing temperatures and with a decrease in spacer thickness between surface and the delta-doped plane. The evolution of photoreflectance spectra can be explained by the activation of Si donors and Fermi level pinned at surface due to the redistribution of As precipitates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358788
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1−xAs/In0.52Al0.48As heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2893-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method that combines capacitance-voltage and current-voltage-temperature measurements of a n+-i-n− (or p+-i-p−) heterobarrier structure for reliable determination of the band discontinuity is described. Experimental and analytical procedures for the extraction of the Fermi energies in the doped layers, the location of the flat band condition, and the determination of the barrier height at flat band are given. The effects of nonparabolicity and strain are also considered. Some potential sources of errors encountered in the conventional procedure that is based on the barrier height at zero bias are avoided in this flat band method. The application of this method and other experimental considerations are illustrated by using the strained InxGa1−xAs/In0.52Al0.48As heterointerface as a specific example. The results show that the conduction-band offset ratio, Qc, is nearly constant at 0.71 for x≤0.54 but appears to change quite abruptly to a fairly constant value of 0.82 for x≥0.58.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357527
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2684-2686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.35−δInδGa0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov–de Haas (SdH) measurements. In the sample of δ〈0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×1013 cm−2 and the electric field at the interface is reduced to 2.19×104 V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al0.35−δInδGa0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1469209
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature InGaAs strained quantum wells have been grown by molecular beam epitaxy and annealed at 600–900 °C for 10 min. For an optimized annealing condition, arsenic precipitates can be successfully confined in the InGaAs wells and completely depleted in the GaAs barriers. The strong accumulation of As precipitates shows that the phenomena are not due to the strain effect but may be explained by the difference of interfacial energy between precipitate and matrix. The ability to control the As precipitates into two-dimensional quantum wells in LT materials has unique applications in a wide variety of devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111861
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Nonalloyed InGaAs/GaAs ohmic contacts for self-aligned ion implanted GaAs heterostructure field effect transistors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2455-2457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed indium gallium arsenide (InGaAs) ohmic contacts were investigated and successfully applied to both n- and p-type self-aligned ion implanted heterostructure field effect transistors (HFETs). The key factor was to preserve the doping concentration and structure integrity of the InGaAs layer during implant activation. Specific contact resistances in the range of 5×10−6–2×10−5 Ω cm for n and p HFETs were realized with this structure and process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108150
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2095-2097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The luminescence of GaAs layers grown by molecular beam epitaxy at low substrate temperature (230 °C) in a GaAs/In0.2Ga0.8As multiple quantum well structure is presented. The near-band-gap emission and defect-related emission are observed for samples annealed at high temperature (800–900 °C), but are not observed for samples annealed at lower temperature (600–700 °C). The luminescence shows a strong correlation with the spacing between As precipitates based on the transmission electron microscope observations. The evolution of luminescence of annealed low-temperature (LT) GaAs can be reasonably explained by the buried Schottky model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113914
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Substrate orientation dependence of low-temperature GaAs grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 55-57 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the substrate orientation effect on crystalline quality of GaAs grown by molecular beam epitaxy at low substrate temperature (215 °C) was performed using double-crystal x-ray diffractometer and transmission electron microscopy. The crystal quality was found to be strongly correlated with substrate orientations. Layers of high crystalline perfection with excess arsenic were obtained on both GaAs(100) and (311)B substrates, while columnar polycrystalline growth was observed on (211)B substrate. The transition from a single crystalline state to a polycrystalline state was clearly demonstrated by a 0.5 μm GaAs layer on (111)B surface. Surface kinetic factors are believed to play important roles during the low temperature growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114181
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...