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Photoreflectance study of Si delta-doped low-temperature GaAs grown by molecular beam epitaxy (1995)

Cheng, T. M. ; Chang, C. Y. ; Hsu, T. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 2124-2127

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Photoreflectance spectroscopy has been used to study the surface electric field of Si delta-doped GaAs grown by molecular beam epitaxy at a low substrate temperature (230 °C). Franz–Keldysh oscillations in the reflectance spectra are observed for samples annealed above 700 °C for 10 min. The deduced surface electric field increases with annealing temperatures and with a decrease in spacer thickness between surface and the delta-doped plane. The evolution of photoreflectance spectra can be explained by the activation of Si donors and Fermi level pinned at surface due to the redistribution of As precipitates. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358788

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