Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 5697-5701
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A high-resolution x-ray diffractometer and transmission electron microscope (TEM) are used to characterize the redistribution of As precipitates in Si δ-doped GaAs grown by molecular-beam epitaxy at low substrate temperature (230 °C). The analysis results indicate that superlattice satellite peaks, as observed for samples annealed at 700–900 °C for 10 min, are attributed to the formation of the GaAs/As superlattice. Also, the intensity of satellite peaks in x-ray rocking curves and TEM observations reveals the varying degree of As precipitates confined on the Si δ-doped planes. Furthermore, the asymmetry of the satellite peaks clearly indicates the lattice expansion and contraction of the annealed low-temperature epitaxial layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357076
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