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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 54 (Aug. 1997), p. 65-74 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2990-2993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two possible causes of depth inhomogeneities of the microstructure of porous silicon are changes in the HF concentration with depth and a varying chemical etching rate of the porous silicon layer. During anodization chemical etching will become important for microporous silicon — e.g. p-porous silicon — due to the large internal surface area, especially at long etching times. On the other hand, a considerable decrease of the HF concentration will occur during etching with high current densities to produce p+-porous silicon with high porosities. We have investigated the depth inhomogeneity of porous silicon layers by spectroscopic ellipsometry, Raman spectroscopy and photoluminescence measurements. From a line shape analysis of the Raman signal a size distribution of nanocrystals is deduced. For p-porous silicon smaller nanocrystals are found near the surface of the layer; for p+-porous silicon etched with high current densities smaller nanocrystals are found near the porous silicon/substrate interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1573-4854
    Keywords: porous silicon ; oxidation ; liquid crystal
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC's) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC's will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1573-4854
    Keywords: porous silicon ; patterning ; photolythography dielectric filters ; reactive ion etching (RIE) ; microoptics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 363-366 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The effect of electrochemical modifications like anodic oxidation, polymer deposition and electrodeposition of Cu and Ni on porous silicon are investigated with XPS and sputter depth profiling. It is shown that after the anodic oxidation small amounts of Si0 remain in the porous layer. The deposition of polymers as well as of metals takes place not only at the surface, but also in the porous layer.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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