Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced etching of Si surfaces: The effect of weak background light (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4414-4417 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, cw, 5 mW HeNe laser provided background light. This laser, by itself, was incapable of etching the Si surface. A substantial enhancement of the laser etching process with background light was observed either when using many pulses or only one UV laser pulse. An even bigger change was observed as a function of the etchant concentration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361749
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Stress effect on coercivity of γ-Fe2O3 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1184-1188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Fe3O4 films were deposited in situ on Si(100) substrates by dc-reactive magnetron sputtering method, and then γ-Fe2O3 thin films were obtained by post-oxidation treatment. The effect of residual stress on coercivity of these films was studied by a bending-beam method. In situ stress-temperature curves of the films taken during the whole heat treatment processes revealed the magnitude and state of film stresses. The measured coercivity increments (470 Oe) are very close to the value (460 Oe) calculated based on stress-induced anisotropy for films with pure γ-Fe2O3 phase. For a film with mixed Fe3O4 and γ-Fe2O3 mixed phase, the magnetostriction is calculated to be 17×10−6. In situ stress-temperature data are provided to depict phase transformations and stress effects on the coercivity of such films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358983
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Magnetic hardening mechanism study in FePt thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4886-4888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe100−xPtx alloy thin films with x=25–67 at. % were prepared by dc magnetron sputtering on naturally oxidized Si substrates. Effects of film composition, annealing temperature (300–650 °C), annealing time (5–120 min), and cooling rate (furnace cooling or ice water quench cooling) on the magnetic properties were investigated. Optimum conditions for saturation magnetization and coercivity of the Fe100−xPtx alloy films were found with x=50 at.%, annealed at 600 °C for 30 min and cooled by ice water quenching. Our experimental data suggests that the magnetic hardening in Fe100−xPtx alloy thin films is mainly due to the fct γ1-FePt phase and the domain wall pinning effect. The domain nucleation mechanism is dominated in samples with furnace cooling; the domain wall pinning mechanism dominates in samples cooled with ice water quenching. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369131
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3653-3655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality AlGaN/GaN heterostructures have been grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. Polarization effects are exploited to achieve a two-dimensional electron-gas sheet density of 8.8×1012 cm−2 and greater on intentionally undoped material with a measured room-temperature mobility as high as 1478 cm2/V s. Transistors were then fabricated from this material, yielding a unity current gain frequency of 50 GHz and a unity power gain frequency of 97 GHz. By increasing the buffer layer thickness, output powers of 1.88 W/mm at 4 GHz with an efficiency of 34% were achieved. These results prove that the polarization effects in the nitrides are as enormous as theory predicts. The key to the improved mobility and operation of the devices of the all-molecular-beam-epitaxy-grown material, the AlN nucleation layer, will be discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125418
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    High-resolution beamline 9.3.2 in the energy range 30–1500 eV at the Advanced Light Source: Design and performance : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3372-3372 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Bending magnet beamline 9.3.2 at the Advanced Light Source (ALS) was designed for high resolution spectroscopy with the capability for delivering circularly polarized light in the soft x-ray energy region using three gratings. The monochromator is a fixed included-angle spherical grating monochromator (SGM) and was originally used at SSRL as a prototype for later insertion-device-based monochromators for the ALS. For operation at the ALS, the toroidal pre-mirror used at SSRL was replaced by a horizontally focusing and a vertically focusing mirror in the Kirkpatrick-Baez configuration. Circularly polarized radiation is obtained by inserting a water-cooled movable aperture in front of the vertically focusing mirror to allow selecting the beam either above or below the horizontal plane. To maintain a stable beam intensity through the entrance slit, the photocurrent signals from the upper and lower jaws of the entrance slit are utilized to set a feedback loop with the vertically deflecting mirror piezoelectric drive. The beamline end station has a movable platform that accommodates two experimental chambers enabling the synchrotron radiation to be directed to either one of the two experimental chambers without breaking the vacuum. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146930
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Refractive index and hygroscopic stability of AlxGa1−xAs native oxides (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1110-1112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present prism coupling measurements on AlxGa1−xAs native oxides showing the dependence of refractive index on composition (0.3≤x≤0.97), oxidation temperature (400≤T≤500), and carrier gas purity. Index values range from n=1.490 (x=0.9, 400 °C) to 1.707 (x=0.3, 500 °C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of AlxGa1−xAs (x≤0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O2 in the N2+H2O process gas. The higher index values are attributed to a transition from a hydroxide to a denser (AlxGa1−x)2O3 oxide phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124612
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    High power mid-infrared interband cascade lasers based on type-II quantum wells (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2409-2411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a high power mid-infrared interband cascade laser operating at temperatures up to 170 K. The threshold current densities of this laser are considerably lower than the previously reported values in cascade lasers. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 23 periods of active regions separated by digitally graded multilayer injection regions. A peak optical output power of ∼0.5 W/facet and a slope of 211 mW/A per facet, corresponding to a differential external quantum efficiency of 131%, are observed at 80 K and at a wavelength of ∼3.9 μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120076
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Room-temperature 1.5 μm photoluminescence of Er3+-doped AlxGa1−xAs native oxides (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3411-3413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating 300 K, continuous wave (cw) photoluminescence near λ=1.53 μm from Er-implanted Al0.8Ga0.2As films oxidized in water vapor (N2+H2O, 500 °C) and annealed (1 h, 700 °C) in Ar+O2. The 40 nm full width at half-maximum (FWHM) spectra are 1.5× broader and ∼10× more intense relative to spectra from unoxidized but annealed samples. The fluorescence decay shows a τ=7 ms lifetime, with a faster τ=1.9 ms component characteristic of a cooperative upconversion mechanism. The data suggest that AlxGa1−xAs native oxides may provide a suitable host for rare-earth optical activity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121649
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Mechanism for flux pinning in NdBa2Cu3O7−δ melt-textured in low oxygen partial pressure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3572-3574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When NdBa2Cu3O7−δ (Nd123) is melt-textured in low oxygen partial pressure (Po2) and subsequently annealed in oxygen to produce the superconducting phase, there is a considerable enhancement of flux pinning compared to Y123. This enhancement is accompanied by a precipitation mechanism due to a change of the solubility limits of Nd1+xBa2−xCu3O7−δ between the high temperature low Po2 conditions used in melt-textured growth and the low temperature oxygen annealing. Transmission electron microscopy reveals a coherent intermediate precipitate structure with a composition of BaCuO2 and a high density of dislocations. We believe these defects are responsible for the strong flux pinning in this material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120395
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Regulation of Cytochromes P450 by DHEA and Its Anticarcinogenic Action (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 774 (1995), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/rp10.1196-annals.1402.auindex_1
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...